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Samwin SWH040R03VLT
| Fabricante | SamwinAsian Brands |
| N.º de pieza fab. | SWH040R03VLT |
| Nº LCSC | C5151861 |
| Emb. | DFN(3x3) |
| Número de Cliente | |
| Atrib. clave | MOSFET 30V 65A DFN(3x3) |
| Hoja de Datos | Samwin SWH040R03VLT |
| Cumplimiento RoHS | 5 documentos disponibles |
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Samwin | |
| Emb. | DFN(3x3) | |
| Output Capacitance(Coss) | 335pF | |
| Ciss-Input Capacitance | 2.792nF | |
| Pd - Power Dissipation | 33.8W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 65A | |
| Reverse Transfer Capacitance (Crss) | 322pF | |
| RDS(on) | 4mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 59nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.1V | |
| Type | N-Channel |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Samwin | |
| Emb. | DFN(3x3) | |
| Output Capacitance(Coss) | 335pF | |
| Ciss-Input Capacitance | 2.792nF | |
| Pd - Power Dissipation | 33.8W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V |
| Tipo | Descripción | |
|---|---|---|
| Current - Continuous Drain(Id) | 65A | |
| Reverse Transfer Capacitance (Crss) | 322pF | |
| RDS(on) | 4mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 59nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.1V | |
| Type | N-Channel |
Ayuda y comentariosMostrar productos similares (0) >
Descripción
Traducción por IA
This power MOSFET is manufactured using advanced technology. This technology enables the power MOSFET to deliver superior characteristics, including fast switching times, low on-resistance, low gate charge, and particularly excellent avalanche characteristics.
Características
Traducción por IA
- High ruggedness DFN3*3 MOSFET
- RDS(ON) @VGS = 4.5V (Typ 4.0mΩ)
- Improved dv/dt Capability
- This power MOSFET is produced with advanced technology, enabling it to have better characteristics, including fast switching time, low on resistance, low gate charge and excellent avalanche characteristics
Aplicaciones
Traducción por IA
- Synchronous Rectification - Li-ion Battery Protection Board - Inverter
Garantía en cada pedido
100% Auténtico · Devolución o Reemplazo en 30 Días
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Samwin | |
| Emb. | DFN(3x3) | |
| Output Capacitance(Coss) | 335pF | |
| Ciss-Input Capacitance | 2.792nF | |
| Pd - Power Dissipation | 33.8W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 65A | |
| Reverse Transfer Capacitance (Crss) | 322pF | |
| RDS(on) | 4mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 59nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.1V | |
| Type | N-Channel |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Samwin | |
| Emb. | DFN(3x3) | |
| Output Capacitance(Coss) | 335pF | |
| Ciss-Input Capacitance | 2.792nF | |
| Pd - Power Dissipation | 33.8W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V |
| Tipo | Descripción | |
|---|---|---|
| Current - Continuous Drain(Id) | 65A | |
| Reverse Transfer Capacitance (Crss) | 322pF | |
| RDS(on) | 4mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 59nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.1V | |
| Type | N-Channel |
Ayuda y comentariosMostrar productos similares (0) >
Descripción
Traducción por IA
This power MOSFET is manufactured using advanced technology. This technology enables the power MOSFET to deliver superior characteristics, including fast switching times, low on-resistance, low gate charge, and particularly excellent avalanche characteristics.
Características
Traducción por IA
- High ruggedness DFN3*3 MOSFET
- RDS(ON) @VGS = 4.5V (Typ 4.0mΩ)
- Improved dv/dt Capability
- This power MOSFET is produced with advanced technology, enabling it to have better characteristics, including fast switching time, low on resistance, low gate charge and excellent avalanche characteristics
Aplicaciones
Traducción por IA
- Synchronous Rectification - Li-ion Battery Protection Board - Inverter
C5151861 Biblioteca EasyEDA
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Detalles |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |