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EDA-ModelleEasyEDA
JSCJ CJM1206
| Hersteller | JSCJAsian Brands |
| Herst.-Teilenr. | CJM1206 |
| LCSC-Nr. | C504118 |
| Verp. | DFNWB-6-EP(2x2) |
| Kundennummer | |
| Hauptmerkm. | MOSFET P-CH 12V 6A DFNWB-6-EP(2x2) |
| Datenblatt | JSCJ CJM1206 |
| Alternativteile | 3 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | JSCJ | |
| Verp. | DFNWB-6-EP(2x2) | |
| Output Capacitance(Coss) | 290pF | |
| Pd - Power Dissipation | - | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 12V | |
| Current - Continuous Drain(Id) | 6A | |
| Gate Threshold Voltage (Vgs(th)) | 900mV | |
| Reverse Transfer Capacitance (Crss@Vds) | 190pF | |
| RDS(on) | 45mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 740pF | |
| Gate Charge(Qg) | 7.8nC@4.5V | |
| Vgs | ±8V | |
| Type | P-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | JSCJ | |
| Verp. | DFNWB-6-EP(2x2) | |
| Output Capacitance(Coss) | 290pF | |
| Pd - Power Dissipation | - | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 12V | |
| Current - Continuous Drain(Id) | 6A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 900mV | |
| Reverse Transfer Capacitance (Crss@Vds) | 190pF | |
| RDS(on) | 45mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 740pF | |
| Gate Charge(Qg) | 7.8nC@4.5V | |
| Vgs | ±8V | |
| Type | P-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
The CJM1206 uses advanced trench technology to provide excellent RDS(on), low gate charge and operation with low gate voltage. This device is suitable for use as a load switching application and a wide variety of other applications.
Merkmale
KI-Übersetzung
- Advanced trench MOSFET process technology
- Ultra low on-resistance with low gate charge
Anwendungen
KI-Übersetzung
- PWM application
- Load switch
- Battery charge in cellular handset
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Nicht vorrätig
Benachrichtigen
Minimum: 5Vielfaches: 5Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 5+ | $ 0.1507 | $ 0.75 |
| 50+ | $ 0.1258 | $ 6.29 |
| 150+ | $ 0.1134 | $ 17.01 |
| 500+ | $ 0.104 | $ 52.00 |
| 3,000+ | $ 0.0966 | $ 289.80 |
| 6,000+ | $ 0.0928 | $ 556.80 |
Standardgehäuse3000/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | JSCJ | |
| Verp. | DFNWB-6-EP(2x2) | |
| Output Capacitance(Coss) | 290pF | |
| Pd - Power Dissipation | - | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 12V | |
| Current - Continuous Drain(Id) | 6A | |
| Gate Threshold Voltage (Vgs(th)) | 900mV | |
| Reverse Transfer Capacitance (Crss@Vds) | 190pF | |
| RDS(on) | 45mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 740pF | |
| Gate Charge(Qg) | 7.8nC@4.5V | |
| Vgs | ±8V | |
| Type | P-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | JSCJ | |
| Verp. | DFNWB-6-EP(2x2) | |
| Output Capacitance(Coss) | 290pF | |
| Pd - Power Dissipation | - | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 12V | |
| Current - Continuous Drain(Id) | 6A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 900mV | |
| Reverse Transfer Capacitance (Crss@Vds) | 190pF | |
| RDS(on) | 45mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 740pF | |
| Gate Charge(Qg) | 7.8nC@4.5V | |
| Vgs | ±8V | |
| Type | P-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
The CJM1206 uses advanced trench technology to provide excellent RDS(on), low gate charge and operation with low gate voltage. This device is suitable for use as a load switching application and a wide variety of other applications.
Merkmale
KI-Übersetzung
- Advanced trench MOSFET process technology
- Ultra low on-resistance with low gate charge
Anwendungen
KI-Übersetzung
- PWM application
- Load switch
- Battery charge in cellular handset
C504118 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |