Nexperia BUK7K5R1-30E,115
| Fabricante | |
| N.º de pieza fab. | BUK7K5R1-30E,115 |
| Nº LCSC | C503617 |
| Emb. | LFPAK-56D-8 |
| Número de Cliente | |
| Atrib. clave | 30V 40A 4.34mΩ@10V 68W 2 N-Channel LFPAK-56D-8 FET, MOSFET Arrays RoHS |
| Hoja de Datos | Nexperia BUK7K5R1-30E,115 |
| Cumplimiento RoHS | 2 documentos disponibles |
| Piezas alternativas | 1 |
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Fabricante | Nexperia | |
| Emb. | LFPAK-56D-8 | |
| Reverse Transfer Capacitance (Crss) | 242pF | |
| Ciss-Input Capacitance | 1.764nF | |
| Operating Temperature | -55℃~+175℃ | |
| Output Capacitance(Coss) | 422pF | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 40A | |
| RDS(on) | 4.34mΩ@10V | |
| Pd - Power Dissipation | 68W | |
| Type | N-Channel | |
| Configuration | - | |
| Number | 2 N-Channel | |
| Gate Charge(Qg) | 31.1nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Fabricante | Nexperia | |
| Emb. | LFPAK-56D-8 | |
| Reverse Transfer Capacitance (Crss) | 242pF | |
| Ciss-Input Capacitance | 1.764nF | |
| Operating Temperature | -55℃~+175℃ | |
| Output Capacitance(Coss) | 422pF | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 40A |
| Tipo | Descripción | |
|---|---|---|
| RDS(on) | 4.34mΩ@10V | |
| Pd - Power Dissipation | 68W | |
| Type | N-Channel | |
| Configuration | - | |
| Number | 2 N-Channel | |
| Gate Charge(Qg) | 31.1nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
Ayuda y comentariosMostrar productos similares (0) >
Descripción
Traducción por IA
Dual standard-level N-channel MOSFET in LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. Designed and qualified to AEC Q101 standard for high-performance automotive applications.
Características
Traducción por IA
- Dual MOSFET
- AEC-Q101 qualified
- Repetitive avalanche rated
- 175°C rated for high thermal demand environments
- True standard level gate with VGS(th) > 1 V at 175°C
Aplicaciones
Traducción por IA
- 12 V automotive systems
- Motor, lamp, and solenoid control
- Transmission control
- Ultra-high-performance power switching
Garantía en cada pedido
100% Auténtico · Devolución o Reemplazo en 30 Días
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Fabricante | Nexperia | |
| Emb. | LFPAK-56D-8 | |
| Reverse Transfer Capacitance (Crss) | 242pF | |
| Ciss-Input Capacitance | 1.764nF | |
| Operating Temperature | -55℃~+175℃ | |
| Output Capacitance(Coss) | 422pF | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 40A | |
| RDS(on) | 4.34mΩ@10V | |
| Pd - Power Dissipation | 68W | |
| Type | N-Channel | |
| Configuration | - | |
| Number | 2 N-Channel | |
| Gate Charge(Qg) | 31.1nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Fabricante | Nexperia | |
| Emb. | LFPAK-56D-8 | |
| Reverse Transfer Capacitance (Crss) | 242pF | |
| Ciss-Input Capacitance | 1.764nF | |
| Operating Temperature | -55℃~+175℃ | |
| Output Capacitance(Coss) | 422pF | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 40A |
| Tipo | Descripción | |
|---|---|---|
| RDS(on) | 4.34mΩ@10V | |
| Pd - Power Dissipation | 68W | |
| Type | N-Channel | |
| Configuration | - | |
| Number | 2 N-Channel | |
| Gate Charge(Qg) | 31.1nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
Ayuda y comentariosMostrar productos similares (0) >
Descripción
Traducción por IA
Dual standard-level N-channel MOSFET in LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. Designed and qualified to AEC Q101 standard for high-performance automotive applications.
Características
Traducción por IA
- Dual MOSFET
- AEC-Q101 qualified
- Repetitive avalanche rated
- 175°C rated for high thermal demand environments
- True standard level gate with VGS(th) > 1 V at 175°C
Aplicaciones
Traducción por IA
- 12 V automotive systems
- Motor, lamp, and solenoid control
- Transmission control
- Ultra-high-performance power switching
C503617 Biblioteca EasyEDA
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Detalles |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



