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Modelli EDAEasyEDA
VISHAY IRL630PBF
| Produttore | |
| Cod. Prod. | IRL630PBF |
| Cod. LCSC | C466983 |
| Imballo | TO-220AB |
| Numero Cliente | |
| Attr. chiave | MOSFET N-CH 200V 5.7A TO-220AB |
| Scheda Tecnica | VISHAY IRL630PBF |
| Conformità RoHS | 2 documenti disponibili |
| Parti alternative | 9 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | VISHAY | |
| Imballo | TO-220AB | |
| Output Capacitance(Coss) | 220pF | |
| Pd - Power Dissipation | 74W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 200V | |
| Current - Continuous Drain(Id) | 5.7A | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 70pF | |
| RDS(on) | 400mΩ@5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.1nF | |
| Gate Charge(Qg) | 40nC@10V | |
| Vgs | ±10V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | VISHAY | |
| Imballo | TO-220AB | |
| Output Capacitance(Coss) | 220pF | |
| Pd - Power Dissipation | 74W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 200V | |
| Current - Continuous Drain(Id) | 5.7A |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 70pF | |
| RDS(on) | 400mΩ@5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.1nF | |
| Gate Charge(Qg) | 40nC@10V | |
| Vgs | ±10V | |
| Type | N-Channel |
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Descrizione
Traduzione AI
Third generation Power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.
Caratteristiche
Traduzione AI
- RoHS COMPLIANT
- Dynamic dV/dt Rating
- Repetitive Avalanche Rated
- Logic Level Gate Drive
- RDS(on) Specified at VGS = 4 V and 5 V
- 150 °C Operating Temperature
- Fast Switching
- Ease of Paralleling
- Compliant to RoHS Directive 2002/95/EC
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Avvisami
Minimo: 1Multiplo: 1Unità di vendita: Piece
| Qtà | Pr. unit. | Importo totale |
|---|---|---|
| 1+ | $ 1.4406 | $ 1.44 |
| 10+ | $ 1.194 | $ 11.94 |
| 50+ | $ 0.9768 | $ 48.84 |
| 100+ | $ 0.8249 | $ 82.49 |
| 500+ | $ 0.7563 | $ 378.15 |
| 1,000+ | $ 0.7252 | $ 725.20 |
Package Standard50/Full Tube | ||
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | VISHAY | |
| Imballo | TO-220AB | |
| Output Capacitance(Coss) | 220pF | |
| Pd - Power Dissipation | 74W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 200V | |
| Current - Continuous Drain(Id) | 5.7A | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 70pF | |
| RDS(on) | 400mΩ@5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.1nF | |
| Gate Charge(Qg) | 40nC@10V | |
| Vgs | ±10V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | VISHAY | |
| Imballo | TO-220AB | |
| Output Capacitance(Coss) | 220pF | |
| Pd - Power Dissipation | 74W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 200V | |
| Current - Continuous Drain(Id) | 5.7A |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 70pF | |
| RDS(on) | 400mΩ@5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.1nF | |
| Gate Charge(Qg) | 40nC@10V | |
| Vgs | ±10V | |
| Type | N-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
Third generation Power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.
Caratteristiche
Traduzione AI
- RoHS COMPLIANT
- Dynamic dV/dt Rating
- Repetitive Avalanche Rated
- Logic Level Gate Drive
- RDS(on) Specified at VGS = 4 V and 5 V
- 150 °C Operating Temperature
- Fast Switching
- Ease of Paralleling
- Compliant to RoHS Directive 2002/95/EC
C466983 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Parti alternative
| MPN | Produttore | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| UF630L-TA3-T | UTC | TO-220 | 514 | $ 0.3591 | ||
| KNP4540A | KIA Semicon Tech | TO-220 | 1 | $ 0.2496 | ||
| TSP18N20M | Truesemi | TO-220 | 81 | $ 0.428 | ||
| IRF630PBF | VISHAY | TO-220AB | 0 | $ 1.0402 | ||
| IRF630PBF-BE3 | VISHAY | TO-220AB | 0 | $ 0.8039 | ||
| IRF632 | TI | TO-220AB | 0 | $ 1.5092 | ||
| IRF634B-FP001 | onsemi | TO-220-3 | 0 | $ 0.3423 | ||
| BUZ32 | TI | TO-220AB | 0 | $ 0.6188 | ||
| BUZ32HXKSA1 | Infineon | TO-220-3 | 0 | $ 1.5624 |