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Hangzhou Silan Microelectronics SVF7N60CF
| Producent | Hangzhou Silan MicroelectronicsAsian Brands |
| Nr części prod. | SVF7N60CF |
| Nr LCSC | C414162 |
| Opak. | TO-220F-3 |
| Numer Klienta | |
| Klucz. cechy | MOSFET N-CH 600V 7A TO-220F-3 |
| Karta Katalogowa | Hangzhou Silan Microelectronics SVF7N60CF |
| Części alternatywne | 5 |
Specyfikacje Produktu
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Hangzhou Silan Microelectronics | |
| Opak. | TO-220F-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Configuration | - | |
| Drain to Source Voltage | 600V | |
| Output Capacitance(Coss) | 96pF | |
| Current - Continuous Drain(Id) | 7A | |
| Ciss-Input Capacitance | 770pF | |
| Pd - Power Dissipation | 45W | |
| Reverse Transfer Capacitance (Crss) | 8.7pF | |
| RDS(on) | 960mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 21.1nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Hangzhou Silan Microelectronics | |
| Opak. | TO-220F-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Configuration | - | |
| Drain to Source Voltage | 600V | |
| Output Capacitance(Coss) | 96pF | |
| Current - Continuous Drain(Id) | 7A |
| Typ | Opis | |
|---|---|---|
| Ciss-Input Capacitance | 770pF | |
| Pd - Power Dissipation | 45W | |
| Reverse Transfer Capacitance (Crss) | 8.7pF | |
| RDS(on) | 960mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 21.1nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
Opis
SVF7N60CF/S/K/MJ/D/T is an N-channel enhancement-mode power MOSFET fabricated using Silicon's proprietary F-Cell high-voltage planar VDMOS technology. The improved process and cell structure are specially designed to minimize on-resistance, deliver superior switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are widely used in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers.
Funkcje
- 7A, 600V, RDS(on)(typ.) = 0.96Ω @ VGS = 10V
- Low gate charge
- Low Crss
- Fast switching
- Improved dv/dt capability
Zastosowania
-AC-DC Power Supply -DC-DC Converter -H-Bridge PWM Motor Driver
| Szt. | Cena jedn. | Suma całkowita |
|---|---|---|
| 1+ | $ 0.4451 | $ 0.45 |
| 10+ | $ 0.3546 | $ 3.55 |
| 50+ | $ 0.3154 | $ 15.77 |
| 100+ | $ 0.2671 | $ 26.71 |
| 500+ | $ 0.2445 | $ 122.25 |
| 1,000+ | $ 0.2324 | $ 232.40 |
Standardowa Obudowa50/Full Tube | ||
Specyfikacje Produktu
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Hangzhou Silan Microelectronics | |
| Opak. | TO-220F-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Configuration | - | |
| Drain to Source Voltage | 600V | |
| Output Capacitance(Coss) | 96pF | |
| Current - Continuous Drain(Id) | 7A | |
| Ciss-Input Capacitance | 770pF | |
| Pd - Power Dissipation | 45W | |
| Reverse Transfer Capacitance (Crss) | 8.7pF | |
| RDS(on) | 960mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 21.1nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Hangzhou Silan Microelectronics | |
| Opak. | TO-220F-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Configuration | - | |
| Drain to Source Voltage | 600V | |
| Output Capacitance(Coss) | 96pF | |
| Current - Continuous Drain(Id) | 7A |
| Typ | Opis | |
|---|---|---|
| Ciss-Input Capacitance | 770pF | |
| Pd - Power Dissipation | 45W | |
| Reverse Transfer Capacitance (Crss) | 8.7pF | |
| RDS(on) | 960mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 21.1nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
Opis
SVF7N60CF/S/K/MJ/D/T is an N-channel enhancement-mode power MOSFET fabricated using Silicon's proprietary F-Cell high-voltage planar VDMOS technology. The improved process and cell structure are specially designed to minimize on-resistance, deliver superior switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are widely used in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers.
Funkcje
- 7A, 600V, RDS(on)(typ.) = 0.96Ω @ VGS = 10V
- Low gate charge
- Low Crss
- Fast switching
- Improved dv/dt capability
Zastosowania
-AC-DC Power Supply -DC-DC Converter -H-Bridge PWM Motor Driver
C414162 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Części alternatywne
| MPN | Producent | Typ alternatywny | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|---|
| SVF7N60F | Hangzhou Silan Microelectronics | Podobne | TO-220F-3 | 17 | $ 0.439 | ||
| SVF7N65F | Hangzhou Silan Microelectronics | Podobne | TO-220F-3 | 820 | $ 0.5407 | ||
| SVF7N80F | Hangzhou Silan Microelectronics | Podobne | TO-220F-3 | 105 | $ 0.6291 | ||
| SVS20N60FJD2 | Hangzhou Silan Microelectronics | Podobne | TO-220F-3 | 552 | $ 1.5575 | ||
| SVF10N65CFJ | Hangzhou Silan Microelectronics | Podobne | TO-220FJ-3L | 13 | $ 0.8936 |