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Modelli EDAEasyEDA
GeneSiC Semiconductor GD2X50MPS12N
| Produttore | |
| Cod. Prod. | GD2X50MPS12N |
| Cod. LCSC | C3758075 |
| Imballo | SOT-227 |
| Numero Cliente | |
| Attr. chiave | 2 Independent 76A 1.2kV 1.8V@50A SOT-227 Diode Arrays RoHS |
| Scheda Tecnica | GeneSiC Semiconductor GD2X50MPS12N |
| Parti alternative | 9 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Diodes/Rectifiers/Diode Arrays | |
| Produttore | GeneSiC Semiconductor | |
| Imballo | SOT-227 | |
| Non-Repetitive Peak Forward Surge Current | 500A | |
| Diode Configuration | 2 Independent | |
| Current - Rectified | 76A | |
| Operating Junction Temperature Range | -55℃~+175℃ | |
| Voltage - DC Reverse(Vr) | 1.2kV | |
| Reverse Leakage Current (Ir) | 15uA@1200V | |
| Voltage - Forward(Vf@If) | 1.8V@50A |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Diodes/Rectifiers/Diode Arrays | |
| Produttore | GeneSiC Semiconductor | |
| Imballo | SOT-227 | |
| Non-Repetitive Peak Forward Surge Current | 500A | |
| Diode Configuration | 2 Independent |
| Tipo | Descrizione | |
|---|---|---|
| Current - Rectified | 76A | |
| Operating Junction Temperature Range | -55℃~+175℃ | |
| Voltage - DC Reverse(Vr) | 1.2kV | |
| Reverse Leakage Current (Ir) | 15uA@1200V | |
| Voltage - Forward(Vf@If) | 1.8V@50A |
Aiuto & FeedbackMostra prodotti simili (0) >
Caratteristiche
Traduzione AI
- 4th-generation thin-chip technology for low forward voltage
- Superior figure of merit QC/IF
- 100% avalanche tested
- Enhanced surge current robustness
- Temperature-independent fast switching characteristics
- Low thermal resistance
- Positive temperature coefficient of forward voltage
- High dV/dt ruggedness
Applicazioni
Traduzione AI
- Electric vehicles and fast chargers
- Solar inverters
- Train auxiliary power supplies
- High-frequency converters
- Motor drives
- Induction heating and welding
- Uninterruptible power supplies
- Pulsed power supplies
Garanzia su ogni ordine
100% Autentico · Reso o Sostituzione entro 30 Giorni
Esaurito
Avvisami
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 1+ | $ 49.5426 | $ 49.54 |
| 200+ | $ 19.172 | $ 3834.40 |
| 500+ | $ 18.4995 | $ 9249.75 |
| 1,000+ | $ 18.1663 | $ 18166.30 |
Package Standard10/Full Tube | ||
Prezzo migliore per quantità maggiore?
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Diodes/Rectifiers/Diode Arrays | |
| Produttore | GeneSiC Semiconductor | |
| Imballo | SOT-227 | |
| Non-Repetitive Peak Forward Surge Current | 500A | |
| Diode Configuration | 2 Independent | |
| Current - Rectified | 76A | |
| Operating Junction Temperature Range | -55℃~+175℃ | |
| Voltage - DC Reverse(Vr) | 1.2kV | |
| Reverse Leakage Current (Ir) | 15uA@1200V | |
| Voltage - Forward(Vf@If) | 1.8V@50A |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Diodes/Rectifiers/Diode Arrays | |
| Produttore | GeneSiC Semiconductor | |
| Imballo | SOT-227 | |
| Non-Repetitive Peak Forward Surge Current | 500A | |
| Diode Configuration | 2 Independent |
| Tipo | Descrizione | |
|---|---|---|
| Current - Rectified | 76A | |
| Operating Junction Temperature Range | -55℃~+175℃ | |
| Voltage - DC Reverse(Vr) | 1.2kV | |
| Reverse Leakage Current (Ir) | 15uA@1200V | |
| Voltage - Forward(Vf@If) | 1.8V@50A |
Aiuto & FeedbackMostra prodotti simili (0) >
Caratteristiche
Traduzione AI
- 4th-generation thin-chip technology for low forward voltage
- Superior figure of merit QC/IF
- 100% avalanche tested
- Enhanced surge current robustness
- Temperature-independent fast switching characteristics
- Low thermal resistance
- Positive temperature coefficient of forward voltage
- High dV/dt ruggedness
Applicazioni
Traduzione AI
- Electric vehicles and fast chargers
- Solar inverters
- Train auxiliary power supplies
- High-frequency converters
- Motor drives
- Induction heating and welding
- Uninterruptible power supplies
- Pulsed power supplies
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | |
| USHTS | |
| TARIC | |
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | |
| USHTS | |
| TARIC |
| Tipo | Dettagli |
|---|---|
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS | |
Parti alternative
| MPN | Produttore | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| MB180DU12FJ | YANGJIE | SOT-227 | 3 | $ 73.0746 | ||
| MB80DU12FJ | YANGJIE | SOT-227 | 1 | $ 27.1782 | ||
| MSC2X100SDA120J | MICROCHIP | SOT-227 | 0 | $ 88.8424 | ||
| MSC2X101SDA120J | MICROCHIP | SOT-227 | 0 | $ 210.6704 | ||
| GD2X100MPS12N | GeneSiC Semiconductor | SOT-227 | 0 | $ 91.5022 | ||
| GD2X75MPS17N | GeneSiC Semiconductor | SOT-227 | 0 | $ 256.7626 | ||
| MB120DU12FJ | YANGJIE | SOT-227 | 0 | $ 51.2543 | ||
| MB200DU12FJ | YANGJIE | SOT-227 | 0 | $ 71.7563 | ||
| MB60DU12FJ | YANGJIE | SOT-227 | 0 | $ 16.5049 |