MICROCHIP CDLL4566AE3
| Produttore | |
| Cod. Prod. | CDLL4566AE3 |
| Cod. LCSC | C3728405 |
| Imballo | DO-213AA |
| Numero Cliente | |
| Attr. chiave | 1 Independent DO-213AA Single Zener Diodes RoHS |
| Scheda Tecnica | MICROCHIP CDLL4566AE3 |
| Conformità RoHS | 2 documenti disponibili |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Diodes/Zener/Single Zener Diodes | |
| Produttore | MICROCHIP | |
| Imballo | DO-213AA | |
| Diode Configuration | 1 Independent | |
| Tolerance | - | |
| Operating Junction Temperature Range | -65℃~+175℃ | |
| Pd - Power Dissipation | 500mW | |
| Reverse Leakage Current (Ir) | 2uA@3V | |
| Impedance(Zzt) | 200Ω | |
| Zener Voltage(Range) | - | |
| Zener Voltage(Nom) | - | |
| Impedance(Zzk) | - |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Diodes/Zener/Single Zener Diodes | |
| Produttore | MICROCHIP | |
| Imballo | DO-213AA | |
| Diode Configuration | 1 Independent | |
| Tolerance | - | |
| Operating Junction Temperature Range | -65℃~+175℃ |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | 500mW | |
| Reverse Leakage Current (Ir) | 2uA@3V | |
| Impedance(Zzt) | 200Ω | |
| Zener Voltage(Range) | - | |
| Zener Voltage(Nom) | - | |
| Impedance(Zzk) | - |
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Caratteristiche
Traduzione AI
- JAN, JANTX, JANTXV, and JANS versions available for 1N4565AUR-1 through 1N4584AUR-1
- Temperature-compensated Zener reference diodes
- Leadless surface mount package
- Low current operating range: 0.5 to 4.0 mA
- Metallurgical bonded, double plug construction
- Operating temperature: -65°C to +175°C
- Storage temperature: -65°C to +175°C
- DC power dissipation: 500 mW at +50°C
- Power derating: 4 mW/°C above +50°C
- Reverse leakage current: IR = 2μA at 25°C with VR = 3Vdc
- Package: DO-213AA, hermetic glass case (MELF, SOD-80, LL34)
- Lead finish: tin/lead
- Polarity: striped (cathode) end positive during diode operation
- Mounting orientation: any
- The axial coefficient of expansion (COE) of this device is approximately +6 PPM/°C; the COE of the mounting surface system should be selected to match the device
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Minimo: 1Multiplo: 1Unità di vendita: Piece
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| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 1+ | $ 8.4099 | $ 8.41 |
| 200+ | $ 3.2548 | $ 650.96 |
| 500+ | $ 3.1406 | $ 1570.30 |
| 1,000+ | $ 3.0835 | $ 3083.50 |
Package Standard264/Full Reel | ||
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Diodes/Zener/Single Zener Diodes | |
| Produttore | MICROCHIP | |
| Imballo | DO-213AA | |
| Diode Configuration | 1 Independent | |
| Tolerance | - | |
| Operating Junction Temperature Range | -65℃~+175℃ | |
| Pd - Power Dissipation | 500mW | |
| Reverse Leakage Current (Ir) | 2uA@3V | |
| Impedance(Zzt) | 200Ω | |
| Zener Voltage(Range) | - | |
| Zener Voltage(Nom) | - | |
| Impedance(Zzk) | - |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Diodes/Zener/Single Zener Diodes | |
| Produttore | MICROCHIP | |
| Imballo | DO-213AA | |
| Diode Configuration | 1 Independent | |
| Tolerance | - | |
| Operating Junction Temperature Range | -65℃~+175℃ |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | 500mW | |
| Reverse Leakage Current (Ir) | 2uA@3V | |
| Impedance(Zzt) | 200Ω | |
| Zener Voltage(Range) | - | |
| Zener Voltage(Nom) | - | |
| Impedance(Zzk) | - |
Aiuto & FeedbackMostra prodotti simili (0) >
Caratteristiche
Traduzione AI
- JAN, JANTX, JANTXV, and JANS versions available for 1N4565AUR-1 through 1N4584AUR-1
- Temperature-compensated Zener reference diodes
- Leadless surface mount package
- Low current operating range: 0.5 to 4.0 mA
- Metallurgical bonded, double plug construction
- Operating temperature: -65°C to +175°C
- Storage temperature: -65°C to +175°C
- DC power dissipation: 500 mW at +50°C
- Power derating: 4 mW/°C above +50°C
- Reverse leakage current: IR = 2μA at 25°C with VR = 3Vdc
- Package: DO-213AA, hermetic glass case (MELF, SOD-80, LL34)
- Lead finish: tin/lead
- Polarity: striped (cathode) end positive during diode operation
- Mounting orientation: any
- The axial coefficient of expansion (COE) of this device is approximately +6 PPM/°C; the COE of the mounting surface system should be selected to match the device
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |

