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VISHAY SIHG70N60EF-GE3
| Producent | |
| Nr części prod. | SIHG70N60EF-GE3 |
| Nr LCSC | C335618 |
| Opak. | TO-247AC-3 |
| Numer Klienta | |
| Klucz. cechy | 520W 600V 70A 38mΩ@10V 1 N-channel N-Channel TO-247AC-3 Single FETs, MOSFETs RoHS |
| Karta Katalogowa | VISHAY SIHG70N60EF-GE3 |
| Zgodność z RoHS | 1 dokumentów dostępnych |
| Części alternatywne | 5 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | VISHAY | |
| Opak. | TO-247AC-3 | |
| Output Capacitance(Coss) | 378pF | |
| Ciss-Input Capacitance | 7.5nF | |
| Pd - Power Dissipation | 520W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 70A | |
| Reverse Transfer Capacitance (Crss) | 5pF | |
| RDS(on) | 38mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 380nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | VISHAY | |
| Opak. | TO-247AC-3 | |
| Output Capacitance(Coss) | 378pF | |
| Ciss-Input Capacitance | 7.5nF | |
| Pd - Power Dissipation | 520W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V |
| Typ | Opis | |
|---|---|---|
| Current - Continuous Drain(Id) | 70A | |
| Reverse Transfer Capacitance (Crss) | 5pF | |
| RDS(on) | 38mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 380nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- MOSFET with fast body diode using E-Series technology
- Reduced reverse recovery time (trr), reverse recovery charge (Qrr), and peak reverse recovery current (IRRM)
- Low figure of merit (FOM): on-resistance (Ron) × gate charge (Qg)
- Low input capacitance (Ciss)
- Enhanced robustness due to low Qrr
- Ultra-low gate charge (Qg)
- Avalanche energy rated (UIS)
Zastosowania
Tłumaczenie AI
- Telecom
- Server and telecom power supplies
- Lighting
- High-intensity discharge (HID)
- Light-emitting diode (LED)
- Consumer electronics and computing
- ATX power supplies
- Industrial
- Welding
- Battery chargers
- Renewable energy
- Solar (photovoltaic inverters)
- Switch-mode power supplies (SMPS)
- Applications with the following topologies
- LLC
- Phase-shifted full bridge (ZVS)
- Three-level inverter
- AC/DC bridge
Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
Brak w magazynie
Powiadom mnie
Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
Dodaj do Listy BOM
| Szt. | Cena jedn.(Tylko do wglądu) | Suma całkowita |
|---|---|---|
| 1+ | $ 8.2743 | $ 8.27 |
| 10+ | $ 7.5139 | $ 75.14 |
| 25+ | $ 7.0607 | $ 176.52 |
| 100+ | $ 6.6041 | $ 660.41 |
| 500+ | $ 6.3929 | $ 3196.45 |
| 1,000+ | $ 6.2971 | $ 6297.10 |
Standardowa Obudowa25/Full Tube | ||
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | VISHAY | |
| Opak. | TO-247AC-3 | |
| Output Capacitance(Coss) | 378pF | |
| Ciss-Input Capacitance | 7.5nF | |
| Pd - Power Dissipation | 520W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 70A | |
| Reverse Transfer Capacitance (Crss) | 5pF | |
| RDS(on) | 38mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 380nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | VISHAY | |
| Opak. | TO-247AC-3 | |
| Output Capacitance(Coss) | 378pF | |
| Ciss-Input Capacitance | 7.5nF | |
| Pd - Power Dissipation | 520W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V |
| Typ | Opis | |
|---|---|---|
| Current - Continuous Drain(Id) | 70A | |
| Reverse Transfer Capacitance (Crss) | 5pF | |
| RDS(on) | 38mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 380nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- MOSFET with fast body diode using E-Series technology
- Reduced reverse recovery time (trr), reverse recovery charge (Qrr), and peak reverse recovery current (IRRM)
- Low figure of merit (FOM): on-resistance (Ron) × gate charge (Qg)
- Low input capacitance (Ciss)
- Enhanced robustness due to low Qrr
- Ultra-low gate charge (Qg)
- Avalanche energy rated (UIS)
Zastosowania
Tłumaczenie AI
- Telecom
- Server and telecom power supplies
- Lighting
- High-intensity discharge (HID)
- Light-emitting diode (LED)
- Consumer electronics and computing
- ATX power supplies
- Industrial
- Welding
- Battery chargers
- Renewable energy
- Solar (photovoltaic inverters)
- Switch-mode power supplies (SMPS)
- Applications with the following topologies
- LLC
- Phase-shifted full bridge (ZVS)
- Three-level inverter
- AC/DC bridge
C335618 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Części alternatywne
| MPN | Producent | Typ alternatywny | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|---|
| IPW65R037C6FKSA1 | Infineon | Podobne | TO-247-3 | 3 | $11.1418 $18.8844 | ||
| NTHL040N65S3F-VB | VBsemi Elec | Podobne | TO-247AC | 5 | $6.8760 $8.0893 | ||
| IPW60R045CPA-VB | VBsemi Elec | Podobne | TO-247 | 5 | $ 9.1578 | ||
| CMH65R040SD | Cmos | Podobne | TO-247 | 164 | $3.5217 $3.707 | ||
| ASW65R041EFDA | ANHI | Podobne | TO-247 | 272 | $ 4.6353 |