Infineon FD200R12PT4B6

제조업체	Infineon
제조사 품번	FD200R12PT4B6
LCSC 번호	C3198763
포장	-
고객 번호
주요 제원	1.1kW 300A 1.2kV FS (Field Stop) IGBT Modules RoHS
데이터시트	Infineon FD200R12PT4B6
RoHS 준수	1개 문서 이용 가능

제품 사양

전체

타입	설명
카테고리	Discrete Semiconductors/Transistors/IGBTs/IGBT Modules
제조업체	Infineon
포장	-
Td(off)	365ns
Pd - Power Dissipation	1.1kW
Td(on)	185ns
Current - Collector(Ic)	300A
Collector-Emitter Breakdown Voltage (Vces)	1.2kV
Reverse Transfer Capacitance (Cres)	540pF
IGBT Type	FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	2.1V@15V,200A
Gate Charge(Qg)	1.65uC@15V
Vce Saturation(VCE(sat))	2.1V
Reverse Recovery Time(trr)	-
Switching Energy(Eoff)	14mJ
Turn-On Energy (Eon)	12mJ
Operating Temperature	-40℃~+150℃
Input Capacitance(Cies)	12.5nF@25V
Output Capacitance(Coes)	-

타입	설명
카테고리	Discrete Semiconductors/Transistors/IGBTs/IGBT Modules
제조업체	Infineon
포장	-
Td(off)	365ns
Pd - Power Dissipation	1.1kW
Td(on)	185ns
Current - Collector(Ic)	300A
Collector-Emitter Breakdown Voltage (Vces)	1.2kV
Reverse Transfer Capacitance (Cres)	540pF
IGBT Type	FS (Field Stop)

타입	설명
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	2.1V@15V,200A
Gate Charge(Qg)	1.65uC@15V
Vce Saturation(VCE(sat))	2.1V
Reverse Recovery Time(trr)	-
Switching Energy(Eoff)	14mJ
Turn-On Energy (Eon)	12mJ
Operating Temperature	-40℃~+150℃
Input Capacitance(Cies)	12.5nF@25V
Output Capacitance(Coes)	-

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전체

타입	설명
카테고리	Discrete Semiconductors/Transistors/IGBTs/IGBT Modules
제조업체	Infineon
포장	-
Td(off)	365ns
Pd - Power Dissipation	1.1kW
Td(on)	185ns
Current - Collector(Ic)	300A
Collector-Emitter Breakdown Voltage (Vces)	1.2kV
Reverse Transfer Capacitance (Cres)	540pF
IGBT Type	FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	2.1V@15V,200A
Gate Charge(Qg)	1.65uC@15V
Vce Saturation(VCE(sat))	2.1V
Reverse Recovery Time(trr)	-
Switching Energy(Eoff)	14mJ
Turn-On Energy (Eon)	12mJ
Operating Temperature	-40℃~+150℃
Input Capacitance(Cies)	12.5nF@25V
Output Capacitance(Coes)	-

타입	설명
카테고리	Discrete Semiconductors/Transistors/IGBTs/IGBT Modules
제조업체	Infineon
포장	-
Td(off)	365ns
Pd - Power Dissipation	1.1kW
Td(on)	185ns
Current - Collector(Ic)	300A
Collector-Emitter Breakdown Voltage (Vces)	1.2kV
Reverse Transfer Capacitance (Cres)	540pF
IGBT Type	FS (Field Stop)

타입	설명
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	2.1V@15V,200A
Gate Charge(Qg)	1.65uC@15V
Vce Saturation(VCE(sat))	2.1V
Reverse Recovery Time(trr)	-
Switching Energy(Eoff)	14mJ
Turn-On Energy (Eon)	12mJ
Operating Temperature	-40℃~+150℃
Input Capacitance(Cies)	12.5nF@25V
Output Capacitance(Coes)	-