Zdjęcia poglądowe
Modele EDAEasyEDA
onsemi FJD3076TM
| Producent | |
| Nr części prod. | FJD3076TM |
| Nr LCSC | C3198541 |
| Opak. | DPAK |
| Numer Klienta | |
| Klucz. cechy | 32V 130 2A NPN DPAK Single Bipolar Transistors RoHS |
| Karta Katalogowa | onsemi FJD3076TM |
| Zgodność z RoHS | 3 dokumentów dostępnych |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Producent | onsemi | |
| Opak. | DPAK | |
| Current - Collector Cutoff | 1uA | |
| Operating Temperature | - | |
| Transition frequency(fT) | 100MHz | |
| Collector - Emitter Voltage VCEO | 32V | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 130 | |
| Pd - Power Dissipation | 1W | |
| Current - Collector(Ic) | 2A | |
| Configuration | - | |
| Number | - | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 800mV |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Producent | onsemi | |
| Opak. | DPAK | |
| Current - Collector Cutoff | 1uA | |
| Operating Temperature | - | |
| Transition frequency(fT) | 100MHz | |
| Collector - Emitter Voltage VCEO | 32V | |
| Emitter-Base Voltage VEBO | 5V |
| Typ | Opis | |
|---|---|---|
| DC Current Gain | 130 | |
| Pd - Power Dissipation | 1W | |
| Current - Collector(Ic) | 2A | |
| Configuration | - | |
| Number | - | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 800mV |
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| Szt. | Cena jedn.(Tylko do wglądu) | Suma całkowita |
|---|---|---|
| 1+ | $ 0.6342 | $ 0.63 |
| 200+ | $ 0.2469 | $ 49.38 |
| 500+ | $ 0.2377 | $ 118.85 |
| 1,000+ | $ 0.233 | $ 233.00 |
Standardowa Obudowa2500/Full Reel | ||
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Producent | onsemi | |
| Opak. | DPAK | |
| Current - Collector Cutoff | 1uA | |
| Operating Temperature | - | |
| Transition frequency(fT) | 100MHz | |
| Collector - Emitter Voltage VCEO | 32V | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 130 | |
| Pd - Power Dissipation | 1W | |
| Current - Collector(Ic) | 2A | |
| Configuration | - | |
| Number | - | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 800mV |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Producent | onsemi | |
| Opak. | DPAK | |
| Current - Collector Cutoff | 1uA | |
| Operating Temperature | - | |
| Transition frequency(fT) | 100MHz | |
| Collector - Emitter Voltage VCEO | 32V | |
| Emitter-Base Voltage VEBO | 5V |
| Typ | Opis | |
|---|---|---|
| DC Current Gain | 130 | |
| Pd - Power Dissipation | 1W | |
| Current - Collector(Ic) | 2A | |
| Configuration | - | |
| Number | - | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 800mV |
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C3198541 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |