Zdjęcia poglądowe
Modele EDAEasyEDA
ST STW8N90K5
| Producent | |
| Nr części prod. | STW8N90K5 |
| Nr LCSC | C2970702 |
| Opak. | TO-247 |
| Numer Klienta | |
| Klucz. cechy | MOSFET N-CH 900V 8A TO-247 |
| Karta Katalogowa | ST STW8N90K5 |
| Zgodność z RoHS | 1 dokumentów dostępnych |
| Części alternatywne | 5 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | ST | |
| Opak. | TO-247 | |
| Output Capacitance(Coss) | 41pF | |
| Ciss-Input Capacitance | 426pF | |
| Pd - Power Dissipation | 130W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 900V | |
| Current - Continuous Drain(Id) | 8A | |
| Reverse Transfer Capacitance (Crss) | 1.2pF | |
| RDS(on) | 680mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 11nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | ST | |
| Opak. | TO-247 | |
| Output Capacitance(Coss) | 41pF | |
| Ciss-Input Capacitance | 426pF | |
| Pd - Power Dissipation | 130W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 900V |
| Typ | Opis | |
|---|---|---|
| Current - Continuous Drain(Id) | 8A | |
| Reverse Transfer Capacitance (Crss) | 1.2pF | |
| RDS(on) | 680mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 11nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Funkcje
Tłumaczenie AI
- Industry’s lowest RDS(on) x area
- Industry’s best FoM (figure of merit)
- Ultra-low gate charge 100% avalanche tested Zener-protected
Zastosowania
Tłumaczenie AI
- Switching applications
Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
Brak w magazynie
Powiadom mnie
Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
Dodaj do Listy BOM
| Szt. | Cena jedn.(Tylko do wglądu) | Suma całkowita |
|---|---|---|
| 1+ | $ 7.5513 | $ 7.55 |
| 10+ | $ 7.4457 | $ 74.46 |
| 30+ | $ 7.3742 | $ 221.23 |
| 100+ | $ 7.3044 | $ 730.44 |
Standardowa Obudowa30/Full Tube | ||
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | ST | |
| Opak. | TO-247 | |
| Output Capacitance(Coss) | 41pF | |
| Ciss-Input Capacitance | 426pF | |
| Pd - Power Dissipation | 130W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 900V | |
| Current - Continuous Drain(Id) | 8A | |
| Reverse Transfer Capacitance (Crss) | 1.2pF | |
| RDS(on) | 680mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 11nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | ST | |
| Opak. | TO-247 | |
| Output Capacitance(Coss) | 41pF | |
| Ciss-Input Capacitance | 426pF | |
| Pd - Power Dissipation | 130W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 900V |
| Typ | Opis | |
|---|---|---|
| Current - Continuous Drain(Id) | 8A | |
| Reverse Transfer Capacitance (Crss) | 1.2pF | |
| RDS(on) | 680mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 11nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Funkcje
Tłumaczenie AI
- Industry’s lowest RDS(on) x area
- Industry’s best FoM (figure of merit)
- Ultra-low gate charge 100% avalanche tested Zener-protected
Zastosowania
Tłumaczenie AI
- Switching applications
C2970702 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Części alternatywne
| MPN | Producent | Typ alternatywny | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|---|
| STWA12N120K5 | ST | Podobne | TO-247 | 17 | $ 20.1389 | ||
| MS15N165HGC0 | MASPOWER | Podobne | TO-247 | 30 | $ 6.7111 | ||
| STW15N95K5 | ST | Podobne | TO-247 | 588 | $ 4.0668 | ||
| APT12057B2LLG | MICROCHIP | Podobne | TO-247-3 | 3 | $ 122.4154 | ||
| STW13NK100Z | ST | Podobne | TO-247-3 | 17 | $ 7.3354 |