TOSHIBA TPCA8123,L1Q
| Hersteller | |
| Herst.-Teilenr. | TPCA8123,L1Q |
| LCSC-Nr. | C180399 |
| Verp. | SOP |
| Kundennummer | |
| Hauptmerkm. | MOSFET P-CH 60V 50A SOP |
| Datenblatt | TOSHIBA TPCA8123,L1Q |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | TOSHIBA | |
| Verp. | SOP | |
| Output Capacitance(Coss) | 680pF | |
| Ciss-Input Capacitance | 7nF | |
| Pd - Power Dissipation | 84W | |
| Configuration | - | |
| Operating Temperature | - | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 50A | |
| Reverse Transfer Capacitance (Crss) | 540pF | |
| RDS(on) | 14.9mΩ@6V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 163nC@10V | |
| Vgs | - | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | P-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | TOSHIBA | |
| Verp. | SOP | |
| Output Capacitance(Coss) | 680pF | |
| Ciss-Input Capacitance | 7nF | |
| Pd - Power Dissipation | 84W | |
| Configuration | - | |
| Operating Temperature | - | |
| Drain to Source Voltage | 60V |
| Typ | Beschreibung | |
|---|---|---|
| Current - Continuous Drain(Id) | 50A | |
| Reverse Transfer Capacitance (Crss) | 540pF | |
| RDS(on) | 14.9mΩ@6V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 163nC@10V | |
| Vgs | - | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | P-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Small, thin form factor with minimal mounting footprint.
- Low on-resistance. RDS(ON) = 8.5mΩ (typ.) VGS = -10V.
- Low leakage current. IDSS = -10uA (max.) VDS = -60V.
- Easy drive/turn-on with low threshold voltage: Vth = -2.0 ~ -3.0V (VDS = -10V, ID = -1.0mA).
Anwendungen
KI-Übersetzung
- Automotive and modern agricultural equipment applications
- Switching regulator applications
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Vorrätig: 2,024
2,024 Ab Lager, sofort versandfertig
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 1+ | $ 4.6442 | $ 4.64 |
| 10+ | $ 3.9604 | $ 39.60 |
| 30+ | $ 3.5535 | $ 106.61 |
| 100+ | $ 3.1436 | $ 314.36 |
| 500+ | $ 2.7924 | $ 1396.20 |
| 1,000+ | $ 2.7058 | $ 2705.80 |
Standardgehäuse5000/Full Reel | ||
Besserer Preis bei größerer Menge?
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Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | TOSHIBA | |
| Verp. | SOP | |
| Output Capacitance(Coss) | 680pF | |
| Ciss-Input Capacitance | 7nF | |
| Pd - Power Dissipation | 84W | |
| Configuration | - | |
| Operating Temperature | - | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 50A | |
| Reverse Transfer Capacitance (Crss) | 540pF | |
| RDS(on) | 14.9mΩ@6V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 163nC@10V | |
| Vgs | - | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | P-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | TOSHIBA | |
| Verp. | SOP | |
| Output Capacitance(Coss) | 680pF | |
| Ciss-Input Capacitance | 7nF | |
| Pd - Power Dissipation | 84W | |
| Configuration | - | |
| Operating Temperature | - | |
| Drain to Source Voltage | 60V |
| Typ | Beschreibung | |
|---|---|---|
| Current - Continuous Drain(Id) | 50A | |
| Reverse Transfer Capacitance (Crss) | 540pF | |
| RDS(on) | 14.9mΩ@6V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 163nC@10V | |
| Vgs | - | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | P-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Small, thin form factor with minimal mounting footprint.
- Low on-resistance. RDS(ON) = 8.5mΩ (typ.) VGS = -10V.
- Low leakage current. IDSS = -10uA (max.) VDS = -60V.
- Easy drive/turn-on with low threshold voltage: Vth = -2.0 ~ -3.0V (VDS = -10V, ID = -1.0mA).
Anwendungen
KI-Übersetzung
- Automotive and modern agricultural equipment applications
- Switching regulator applications
C180399 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



