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Modelos EDAEasyEDA
MICROCHIP UTR3350
| Fabricante | |
| Cód. da peça | UTR3350 |
| Nº LCSC | C17458465 |
| Emb. | Through Hole |
| Número do Cliente | |
| Atrib. princ. | 350ns 500V 1.1V@3A 3A Through Hole Single Diodes |
| Folha de Dados | MICROCHIP UTR3350 |
Especificações do Produto
Tudo
| Tipo | Descrição | |
|---|---|---|
| Categoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Fabricante | MICROCHIP | |
| Emb. | Through Hole | |
| Reverse Recovery Time (trr) | 350ns | |
| Diode Configuration | - | |
| Operating Junction Temperature Range | -65℃~+175℃ | |
| Voltage - DC Reverse (Vr) (Max) | 500V | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 1.1V@3A | |
| Reverse Leakage Current (Ir) | 5uA@500V | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Current - Rectified | 3A |
| Tipo | Descrição | |
|---|---|---|
| Categoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Fabricante | MICROCHIP | |
| Emb. | Through Hole | |
| Reverse Recovery Time (trr) | 350ns | |
| Diode Configuration | - | |
| Operating Junction Temperature Range | -65℃~+175℃ |
| Tipo | Descrição | |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 500V | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 1.1V@3A | |
| Reverse Leakage Current (Ir) | 5uA@500V | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Current - Rectified | 3A |
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Descrição
Tradução por IA
The small size and high surge capability make this series of power switching rectifiers suitable for power supplies where size, weight, and reliability are critical. Microsemi also offers a wide range of other rectifier products to meet higher and lower current ratings for various recovery time requirements, including standard, fast, and ultrafast device types in both through-hole and surface mount packages.
Recursos
Tradução por IA
- Miniature void-free hermetically sealed glass package.
- 2A to 4A fast recovery rectifier series, peak reverse working voltage range 50V to 600V.
- Extremely rugged construction.
- Internal "Class 1" metallurgical bonding.
- RoHS compliant versions available.
Aplicações
Tradução por IA
- Surge current rating up to 100 amperes.
- Low thermal resistance.
- Controlled avalanche and peak reverse power capability.
- Inherent radiation hardness as described in Microsemi MicroNote 050.
Garantia em cada pedido
100% Autêntico · Devolução ou Substituição em 30 Dias
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Mínimo: 1Múltiplo: 1Unidade de venda: Piece
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| Qtd. | Preço unit.(Apenas para referência) | Valor total |
|---|---|---|
| 1+ | $ 29.418 | $ 29.42 |
| 200+ | $ 11.7388 | $ 2347.76 |
| 500+ | $ 11.3465 | $ 5673.25 |
| 1,000+ | $ 11.1526 | $ 11152.60 |
Encapsulamento Padrão1/Full Bag | ||
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Especificações do Produto
Tudo
| Tipo | Descrição | |
|---|---|---|
| Categoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Fabricante | MICROCHIP | |
| Emb. | Through Hole | |
| Reverse Recovery Time (trr) | 350ns | |
| Diode Configuration | - | |
| Operating Junction Temperature Range | -65℃~+175℃ | |
| Voltage - DC Reverse (Vr) (Max) | 500V | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 1.1V@3A | |
| Reverse Leakage Current (Ir) | 5uA@500V | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Current - Rectified | 3A |
| Tipo | Descrição | |
|---|---|---|
| Categoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Fabricante | MICROCHIP | |
| Emb. | Through Hole | |
| Reverse Recovery Time (trr) | 350ns | |
| Diode Configuration | - | |
| Operating Junction Temperature Range | -65℃~+175℃ |
| Tipo | Descrição | |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 500V | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 1.1V@3A | |
| Reverse Leakage Current (Ir) | 5uA@500V | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Current - Rectified | 3A |
Ajuda e FeedbackMostrar produtos similares (0) >
Descrição
Tradução por IA
The small size and high surge capability make this series of power switching rectifiers suitable for power supplies where size, weight, and reliability are critical. Microsemi also offers a wide range of other rectifier products to meet higher and lower current ratings for various recovery time requirements, including standard, fast, and ultrafast device types in both through-hole and surface mount packages.
Recursos
Tradução por IA
- Miniature void-free hermetically sealed glass package.
- 2A to 4A fast recovery rectifier series, peak reverse working voltage range 50V to 600V.
- Extremely rugged construction.
- Internal "Class 1" metallurgical bonding.
- RoHS compliant versions available.
Aplicações
Tradução por IA
- Surge current rating up to 100 amperes.
- Low thermal resistance.
- Controlled avalanche and peak reverse power capability.
- Inherent radiation hardness as described in Microsemi MicroNote 050.
Conformidade & Códigos de Exportação
| Tipo | Detalhes |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Tipo | Detalhes |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Tipo | Detalhes |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |