TOSHIBA RN4982FE,LF(CT
| Hersteller | |
| Herst.-Teilenr. | RN4982FE,LF(CT |
| LCSC-Nr. | C17354526 |
| Verp. | SOT-563(SOT-666) |
| Kundennummer | |
| Hauptmerkm. | 50 100mW 100mA 50V 1 NPN, 1 PNP Pre-Biased SOT-563(SOT-666) Bipolar Transistor Arrays, Pre-Biased RoHS |
| Datenblatt | TOSHIBA RN4982FE,LF(CT |
| Alternativteile | 5 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Hersteller | TOSHIBA | |
| Verp. | SOT-563(SOT-666) | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 250MHz | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 50 | |
| Vce Saturation(VCE(sat)) | 300mV | |
| Operating Temperature | - | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 10kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 100mW | |
| Voltage - Input(Max)(VI(off)) | 1.5V@0.1mA,5V | |
| Input Voltage (VI(on)@Ic,Vce) | 1.2V@5mA,0.2V | |
| Current - Collector(Ic) | 100mA | |
| Collector - Emitter Voltage VCEO | 50V | |
| type | NPN+PNP | |
| Number | 1 NPN, 1 PNP Pre-Biased |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Hersteller | TOSHIBA | |
| Verp. | SOT-563(SOT-666) | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 250MHz | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 50 | |
| Vce Saturation(VCE(sat)) | 300mV | |
| Operating Temperature | - | |
| Output Voltage(VO(on)) | - |
| Typ | Beschreibung | |
|---|---|---|
| Input Resistor | 10kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 100mW | |
| Voltage - Input(Max)(VI(off)) | 1.5V@0.1mA,5V | |
| Input Voltage (VI(on)@Ic,Vce) | 1.2V@5mA,0.2V | |
| Current - Collector(Ic) | 100mA | |
| Collector - Emitter Voltage VCEO | 50V | |
| type | NPN+PNP | |
| Number | 1 NPN, 1 PNP Pre-Biased |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- AEC-Q101 qualified
- Small package (dual-inline type)
- Integrated bias resistors reduce required external components, minimizing system size and assembly time.
Anwendungen
KI-Übersetzung
- Switching, inverter circuits
- Interface
- Driver circuits
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Nicht vorrätig
Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 0.0695 | $ 0.07 |
| 200+ | $ 0.0278 | $ 5.56 |
| 500+ | $ 0.0268 | $ 13.40 |
| 1,000+ | $ 0.0264 | $ 26.40 |
Standardgehäuse4000/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Hersteller | TOSHIBA | |
| Verp. | SOT-563(SOT-666) | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 250MHz | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 50 | |
| Vce Saturation(VCE(sat)) | 300mV | |
| Operating Temperature | - | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 10kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 100mW | |
| Voltage - Input(Max)(VI(off)) | 1.5V@0.1mA,5V | |
| Input Voltage (VI(on)@Ic,Vce) | 1.2V@5mA,0.2V | |
| Current - Collector(Ic) | 100mA | |
| Collector - Emitter Voltage VCEO | 50V | |
| type | NPN+PNP | |
| Number | 1 NPN, 1 PNP Pre-Biased |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Hersteller | TOSHIBA | |
| Verp. | SOT-563(SOT-666) | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 250MHz | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 50 | |
| Vce Saturation(VCE(sat)) | 300mV | |
| Operating Temperature | - | |
| Output Voltage(VO(on)) | - |
| Typ | Beschreibung | |
|---|---|---|
| Input Resistor | 10kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 100mW | |
| Voltage - Input(Max)(VI(off)) | 1.5V@0.1mA,5V | |
| Input Voltage (VI(on)@Ic,Vce) | 1.2V@5mA,0.2V | |
| Current - Collector(Ic) | 100mA | |
| Collector - Emitter Voltage VCEO | 50V | |
| type | NPN+PNP | |
| Number | 1 NPN, 1 PNP Pre-Biased |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- AEC-Q101 qualified
- Small package (dual-inline type)
- Integrated bias resistors reduce required external components, minimizing system size and assembly time.
Anwendungen
KI-Übersetzung
- Switching, inverter circuits
- Interface
- Driver circuits
C17354526 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Typ | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Alternativteile
| MPN | Hersteller | Alternativtyp | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|---|
| DCX114YH-7 | DIODES | Ähnliche | SOT-563 | 490 | $ 0.1192 | ||
| RN4902FE,LF(CT | TOSHIBA | Ähnliche | SOT-563(SOT-666) | 0 | $ 0.0794 | ||
| RN4902FE,LXHF(CT | TOSHIBA | Ähnliche | SOT-563(SOT-666) | 0 | $ 0.154 | ||
| RN4983FE,LXHF(CT | TOSHIBA | Ähnliche | SOT-563(SOT-666) | 0 | $ 0.176 | ||
| RN4983FE,LF(CT | TOSHIBA | Ähnliche | SOT-563(SOT-666) | 0 | $ 0.0695 |
5 weitere Alternativteile.Alle Ersatzprodukte anzeigen

