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MATSUKI ME4565AD4
| Produttore | MATSUKIAsian Brands |
| Cod. Prod. | ME4565AD4 |
| Cod. LCSC | C165233 |
| Imballo | TO-252-4 |
| Numero Cliente | |
| Attr. chiave | MOSFET N-CH+P-CH ARR 40V 22.1A TO-252-4 |
| Scheda Tecnica | MATSUKI ME4565AD4 |
| Conformità RoHS | 1 documenti disponibili |
| Parti alternative | 5 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | MATSUKI | |
| Imballo | TO-252-4 | |
| Output Capacitance(Coss) | 72pF;120pF | |
| Ciss-Input Capacitance | 560pF;860pF | |
| Pd - Power Dissipation | 2.7W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 22.1A | |
| Reverse Transfer Capacitance (Crss) | 18pF;35pF | |
| RDS(on) | 23mΩ@10V;36mΩ@10V | |
| Number | 1 N-Channel + 1 P-Channel | |
| Gate Charge(Qg) | 10nC@4.5V | |
| Vgs | ±25V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel + P-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | MATSUKI | |
| Imballo | TO-252-4 | |
| Output Capacitance(Coss) | 72pF;120pF | |
| Ciss-Input Capacitance | 560pF;860pF | |
| Pd - Power Dissipation | 2.7W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 40V |
| Tipo | Descrizione | |
|---|---|---|
| Current - Continuous Drain(Id) | 22.1A | |
| Reverse Transfer Capacitance (Crss) | 18pF;35pF | |
| RDS(on) | 23mΩ@10V;36mΩ@10V | |
| Number | 1 N-Channel + 1 P-Channel | |
| Gate Charge(Qg) | 10nC@4.5V | |
| Vgs | ±25V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel + P-Channel |
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Descrizione
Traduzione AI
The N and P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
Caratteristiche
Traduzione AI
- RDS(ON) ≤30mΩ@VGS=10V (N-Ch)
- RDS(ON) ≤58mΩ@VGS=4.5V (N-Ch)
- RDS(ON) ≤45mΩ@VGS=-10V (P-Ch)
- RDS(ON) ≤75mΩ@VGS=-4.5V (P-Ch)
- Super high density cell design for extremely low RDs(ON)
- Exceptional on-resistance and maximum DC current capability
Applicazioni
Traduzione AI
- Power Management in Note book
- Portable Equipment
- Battery Powered System
- DC/DC Converter
- Load Switch
- LCD Display inverter
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Esaurito
Avvisami
Minimo: 5Multiplo: 5Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 5+ | $ 0.2483 | $ 1.24 |
| 50+ | $ 0.1963 | $ 9.82 |
| 150+ | $ 0.174 | $ 26.10 |
| 500+ | $ 0.1462 | $ 73.10 |
| 2,500+ | $ 0.1338 | $ 334.50 |
| 5,000+ | $ 0.1264 | $ 632.00 |
Package Standard2500/Full Reel | ||
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | MATSUKI | |
| Imballo | TO-252-4 | |
| Output Capacitance(Coss) | 72pF;120pF | |
| Ciss-Input Capacitance | 560pF;860pF | |
| Pd - Power Dissipation | 2.7W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 22.1A | |
| Reverse Transfer Capacitance (Crss) | 18pF;35pF | |
| RDS(on) | 23mΩ@10V;36mΩ@10V | |
| Number | 1 N-Channel + 1 P-Channel | |
| Gate Charge(Qg) | 10nC@4.5V | |
| Vgs | ±25V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel + P-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | MATSUKI | |
| Imballo | TO-252-4 | |
| Output Capacitance(Coss) | 72pF;120pF | |
| Ciss-Input Capacitance | 560pF;860pF | |
| Pd - Power Dissipation | 2.7W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 40V |
| Tipo | Descrizione | |
|---|---|---|
| Current - Continuous Drain(Id) | 22.1A | |
| Reverse Transfer Capacitance (Crss) | 18pF;35pF | |
| RDS(on) | 23mΩ@10V;36mΩ@10V | |
| Number | 1 N-Channel + 1 P-Channel | |
| Gate Charge(Qg) | 10nC@4.5V | |
| Vgs | ±25V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel + P-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
The N and P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
Caratteristiche
Traduzione AI
- RDS(ON) ≤30mΩ@VGS=10V (N-Ch)
- RDS(ON) ≤58mΩ@VGS=4.5V (N-Ch)
- RDS(ON) ≤45mΩ@VGS=-10V (P-Ch)
- RDS(ON) ≤75mΩ@VGS=-4.5V (P-Ch)
- Super high density cell design for extremely low RDs(ON)
- Exceptional on-resistance and maximum DC current capability
Applicazioni
Traduzione AI
- Power Management in Note book
- Portable Equipment
- Battery Powered System
- DC/DC Converter
- Load Switch
- LCD Display inverter
C165233 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |