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Modele EDAEasyEDA
MagnaChip Semicon MDD14N25CRH
| Producent | |
| Nr części prod. | MDD14N25CRH |
| Nr LCSC | C108997 |
| Opak. | TO-252-2(DPAK) |
| Numer Klienta | |
| Klucz. cechy | 69.4W 250V 10.2A 280mΩ@10V 1 N-channel N-Channel TO-252-2(DPAK) Single FETs, MOSFETs |
| Karta Katalogowa | MagnaChip Semicon MDD14N25CRH |
| Części alternatywne | 5 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | MagnaChip Semicon | |
| Opak. | TO-252-2(DPAK) | |
| Output Capacitance(Coss) | 142pF | |
| Ciss-Input Capacitance | 741pF | |
| Pd - Power Dissipation | 69.4W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 250V | |
| Current - Continuous Drain(Id) | 10.2A | |
| Reverse Transfer Capacitance (Crss) | 15pF | |
| RDS(on) | 280mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 20nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | MagnaChip Semicon | |
| Opak. | TO-252-2(DPAK) | |
| Output Capacitance(Coss) | 142pF | |
| Ciss-Input Capacitance | 741pF | |
| Pd - Power Dissipation | 69.4W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 250V |
| Typ | Opis | |
|---|---|---|
| Current - Continuous Drain(Id) | 10.2A | |
| Reverse Transfer Capacitance (Crss) | 15pF | |
| RDS(on) | 280mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 20nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
These N-channel MOSFETs are manufactured using advanced MagnaChip MOSFET technology, featuring low on-resistance, high switching performance, and superior quality. These devices are suitable for SMPS, high-speed switching, and general-purpose applications.
Funkcje
Tłumaczenie AI
- Drain-source voltage (VDS) = 250 V
- Drain current (ID) = 10.2 A
- On-resistance RDS(ON) ≤ 0.28 Ω at gate-source voltage (VGS) = 10 V
Zastosowania
Tłumaczenie AI
- Power Supply
- Motor Control
- High-Current, High-Speed Switching
Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
Brak w magazynie
Powiadom mnie
Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
Dodaj do Listy BOM
| Szt. | Cena jedn.(Tylko do wglądu) | Suma całkowita |
|---|---|---|
| 1+ | $ 0.6402 | $ 0.64 |
| 10+ | $ 0.5475 | $ 5.48 |
| 30+ | $ 0.5069 | $ 15.21 |
| 100+ | $ 0.4582 | $ 45.82 |
| 500+ | $ 0.4354 | $ 217.70 |
| 1,000+ | $ 0.4225 | $ 422.50 |
Standardowa Obudowa3000/Full Reel | ||
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | MagnaChip Semicon | |
| Opak. | TO-252-2(DPAK) | |
| Output Capacitance(Coss) | 142pF | |
| Ciss-Input Capacitance | 741pF | |
| Pd - Power Dissipation | 69.4W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 250V | |
| Current - Continuous Drain(Id) | 10.2A | |
| Reverse Transfer Capacitance (Crss) | 15pF | |
| RDS(on) | 280mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 20nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | MagnaChip Semicon | |
| Opak. | TO-252-2(DPAK) | |
| Output Capacitance(Coss) | 142pF | |
| Ciss-Input Capacitance | 741pF | |
| Pd - Power Dissipation | 69.4W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 250V |
| Typ | Opis | |
|---|---|---|
| Current - Continuous Drain(Id) | 10.2A | |
| Reverse Transfer Capacitance (Crss) | 15pF | |
| RDS(on) | 280mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 20nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
These N-channel MOSFETs are manufactured using advanced MagnaChip MOSFET technology, featuring low on-resistance, high switching performance, and superior quality. These devices are suitable for SMPS, high-speed switching, and general-purpose applications.
Funkcje
Tłumaczenie AI
- Drain-source voltage (VDS) = 250 V
- Drain current (ID) = 10.2 A
- On-resistance RDS(ON) ≤ 0.28 Ω at gate-source voltage (VGS) = 10 V
Zastosowania
Tłumaczenie AI
- Power Supply
- Motor Control
- High-Current, High-Speed Switching
C108997 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Części alternatywne
| MPN | Producent | Typ alternatywny | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|---|
| TSD16N25M | Truesemi | Podobne | TO-252 | 481 | $ 0.3153 | ||
| RS60R380BD | REASUNOS | Podobne | TO-252 | 1,274 | $0.3981 $0.419 | ||
| MMD60R400RFZRH | MagnaChip Semicon | Podobne | TO-252(DPAK) | 415 | $ 0.5703 | ||
| RS65R380BD | REASUNOS | Podobne | TO-252 | 2,083 | $0.3629 $0.382 | ||
| RS70R380D | REASUNOS | Podobne | TO-252 | 620 | $0.6036 $0.6353 |