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Shanghai Prisemi Elec PESDNC2FD8VB

Fabricante
Shanghai Prisemi ElecAsian Brands
N.º de pieza fab.
PESDNC2FD8VB
Nº LCSC
C918817
Emb.
DFN1006-2L
Número de Cliente
Atrib. clave
8VWM 16VC DFN1006-2L
Hoja de DatosShanghai Prisemi Elec PESDNC2FD8VB
Garantía en cada pedido
100% Auténtico · Devolución o Reemplazo en 30 Días

Especificaciones del Producto

Todo
TipoDescripción
CategoríaCircuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes
FabricanteShanghai Prisemi Elec
Emb.DFN1006-2L
Clamping Voltage37V
Operating Temperature-55℃~+150℃
Peak Pulse Current (Ipp)2A
Peak Pulse Power Dissipation (Ppp)30W@8/20us
Number of ChannelsSingle-channel
Voltage - Breakdown13V
typeTVS
Reverse Leakage Current (Ir)1uA
PolarityBidirectional
Reverse Stand-Off Voltage (Vrwm)8V
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Descripción

Traducción por IA

The PESDNC2FD8VB protects sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD) and other voltage induced transient events. They feature large cross-sectional area junctions for conducting high transient currents, offer desirable electrical characteristics for board level protection, such as fast response time, low operating voltage. It gives designer the flexibility to protect one bi-directional line in applications where arrays are not practical.

Características

Traducción por IA
  • 30W peak pulse power per line (tp = 8/20μs)
  • DFN1006-2L package
  • Replacement for MLV(0402)
  • Bidirectional configurations
  • Response time is typically < 1ns
  • Low clamping voltage
  • RoHS compliant
  • Transient protection for data lines to IEC61000-4-2(ESD) ±15KV(air), ±10KV(contact); IEC61000-4-4 (EFT) 40A (5/50ns)

Aplicaciones

Traducción por IA
  • Cellular phones
  • Portable devices
  • Digital cameras
  • Power supplies