Abbildung ähnlich
EDA-ModelleEasyEDA
onsemi NTMTS1D5N08H
| Hersteller | |
| Herst.-Teilenr. | NTMTS1D5N08H |
| LCSC-Nr. | C894062 |
| Verp. | DFNW-8(8.3x8.4) |
| Kundennummer | |
| Hauptmerkm. | 80V 4V 1.5mΩ@10V 1 N-channel N-Channel DFNW-8(8.3x8.4) Single FETs, MOSFETs RoHS |
| Datenblatt | onsemi NTMTS1D5N08H |
| RoHS-Konformität | 4 Dokumente verfügbar |
| Alternativteile | 5 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | DFNW-8(8.3x8.4) | |
| Output Capacitance(Coss) | 1.19nF | |
| Pd - Power Dissipation | 4.2W;208W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 80V | |
| Current - Continuous Drain(Id) | 36A;255A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 31pF | |
| RDS(on) | 1.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 8.22nF | |
| Gate Charge(Qg) | 125nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | DFNW-8(8.3x8.4) | |
| Output Capacitance(Coss) | 1.19nF | |
| Pd - Power Dissipation | 4.2W;208W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 80V | |
| Current - Continuous Drain(Id) | 36A;255A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 31pF | |
| RDS(on) | 1.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 8.22nF | |
| Gate Charge(Qg) | 125nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Compact package (8x8 mm) for space-constrained designs
- Low on-resistance RDS(on) minimizes conduction losses
- Low gate charge QG and capacitance minimize driving losses
- Lead-free, RoHS compliant
Anwendungen
KI-Übersetzung
- Power tools, battery-powered vacuum cleaners - Drones, material handling equipment - Battery management systems/energy storage, home automation
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Vorrätig: 50
50 Ab Lager, sofort versandfertig
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 1+ | $ 5.0296 | $ 5.03 |
| 10+ | $ 4.2992 | $ 42.99 |
| 30+ | $ 3.8662 | $ 115.99 |
| 100+ | $ 3.4266 | $ 342.66 |
| 500+ | $ 3.224 | $ 1612.00 |
| 1,000+ | $ 3.1341 | $ 3134.10 |
Standardgehäuse3000/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | DFNW-8(8.3x8.4) | |
| Output Capacitance(Coss) | 1.19nF | |
| Pd - Power Dissipation | 4.2W;208W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 80V | |
| Current - Continuous Drain(Id) | 36A;255A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 31pF | |
| RDS(on) | 1.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 8.22nF | |
| Gate Charge(Qg) | 125nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | DFNW-8(8.3x8.4) | |
| Output Capacitance(Coss) | 1.19nF | |
| Pd - Power Dissipation | 4.2W;208W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 80V | |
| Current - Continuous Drain(Id) | 36A;255A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 31pF | |
| RDS(on) | 1.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 8.22nF | |
| Gate Charge(Qg) | 125nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Compact package (8x8 mm) for space-constrained designs
- Low on-resistance RDS(on) minimizes conduction losses
- Low gate charge QG and capacitance minimize driving losses
- Lead-free, RoHS compliant
Anwendungen
KI-Übersetzung
- Power tools, battery-powered vacuum cleaners - Drones, material handling equipment - Battery management systems/energy storage, home automation
C894062 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Alternativtyp | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|---|
| NVMTS1D5N08H | onsemi | Ähnliche | DFNW-8(8.3x8.4) | 5 | $ 6.7325 | ||
| NVMTS1D6N10MCTXG | onsemi | Ähnliche | DFNW-8(8.3x8.4) | 10 | $ 13.1936 | ||
| NVMTSC1D3N08M7TXG | onsemi | Ähnliche | DFNW-8(8.4x8.3) | 15 | $ 7.1026 | ||
| NVMTS1D2N08H | onsemi | Ähnliche | DFNW-8(8.4x8.3) | 12 | $ 7.8405 | ||
| NTMTS1D6N10MCTXG | onsemi | Ähnliche | DFNW-8(8.4x8.3) | 0 | $ 13.9182 |
5 weitere Alternativteile.Alle Ersatzprodukte anzeigen