실제 제품과 다를 수 있음
EDA 모델EasyEDA
onsemi NSVMUN5131T1G
| 제조업체 | |
| 제조사 품번 | NSVMUN5131T1G |
| LCSC 번호 | C893966 |
| 포장 | SC-70-3 |
| 고객 번호 | |
| 주요 제원 | 50V 8 100mA 202mW PNP 1 PNP Pre-Biased SC-70-3 Single, Pre-Biased Bipolar Transistors RoHS |
| 데이터시트 | onsemi NSVMUN5131T1G |
| RoHS 준수 | 4개 문서 이용 가능 |
| 대체 부품 | 5 |
제품 사양
전체
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| 제조업체 | onsemi | |
| 포장 | SC-70-3 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 8 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Current - Collector(Ic) | 100mA | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 2.2kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 202mW | |
| Input Voltage (VI(on)@Ic,Vce) | 2V@20mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V | |
| Operating temperature | - | |
| type | PNP | |
| Number | 1 PNP Pre-Biased |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| 제조업체 | onsemi | |
| 포장 | SC-70-3 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 8 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Current - Collector(Ic) | 100mA |
| 타입 | 설명 | |
|---|---|---|
| Output Voltage(VO(on)) | - | |
| Input Resistor | 2.2kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 202mW | |
| Input Voltage (VI(on)@Ic,Vce) | 2V@20mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V | |
| Operating temperature | - | |
| type | PNP | |
| Number | 1 PNP Pre-Biased |
도움말 및 피드백유사 제품 보기 (0) >
개요
AI 번역
This series of digital transistors is designed to replace individual devices and their external resistor bias networks. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor. The BRT eliminates these discrete components by integrating them into a single device. Using BRTs reduces system cost and saves board space.
주요 특징
AI 번역
- Simplified circuit design
- Board space savings
- Reduced component count
- S and NSV prefixes for automotive and other applications with unique sourcing and control change requirements; AEC-Q101 qualified and PPAP capable
- These devices are Pb-free, halogen-free/BFR-free, and RoHS compliant
모든 주문 보장
100% 정품 · 30일 반품 또는 교환
품절
재입고 알림
최소값: 1배수: 1판매 단위: Piece
BOM 목록에 추가
| 수량 | 단가(참고용) | 총액 |
|---|---|---|
| 1+ | $ 0.0569 | $ 0.06 |
| 200+ | $ 0.0221 | $ 4.42 |
| 500+ | $ 0.0213 | $ 10.65 |
| 1,000+ | $ 0.0209 | $ 20.90 |
표준 패키지3000/Full Reel | ||
수량이 많을수록 더 좋은 가격?
$
제품 사양
전체
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| 제조업체 | onsemi | |
| 포장 | SC-70-3 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 8 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Current - Collector(Ic) | 100mA | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 2.2kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 202mW | |
| Input Voltage (VI(on)@Ic,Vce) | 2V@20mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V | |
| Operating temperature | - | |
| type | PNP | |
| Number | 1 PNP Pre-Biased |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| 제조업체 | onsemi | |
| 포장 | SC-70-3 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 8 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Current - Collector(Ic) | 100mA |
| 타입 | 설명 | |
|---|---|---|
| Output Voltage(VO(on)) | - | |
| Input Resistor | 2.2kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 202mW | |
| Input Voltage (VI(on)@Ic,Vce) | 2V@20mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V | |
| Operating temperature | - | |
| type | PNP | |
| Number | 1 PNP Pre-Biased |
도움말 및 피드백유사 제품 보기 (0) >
개요
AI 번역
This series of digital transistors is designed to replace individual devices and their external resistor bias networks. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor. The BRT eliminates these discrete components by integrating them into a single device. Using BRTs reduces system cost and saves board space.
주요 특징
AI 번역
- Simplified circuit design
- Board space savings
- Reduced component count
- S and NSV prefixes for automotive and other applications with unique sourcing and control change requirements; AEC-Q101 qualified and PPAP capable
- These devices are Pb-free, halogen-free/BFR-free, and RoHS compliant
C893966 EasyEDA 라이브러리
컴플라이언스 & 수출 코드
| 타입 | 세부사항 |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| 타입 | 세부사항 |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| 타입 | 세부사항 |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
대체 부품
| MPN | 제조사 | 대체 유형 | 포장 | 재고 현황 | 단가 | ||
|---|---|---|---|---|---|---|---|
| PDTA124XU,115 | Nexperia | 유사 제품 | SOT-323-3 | 200 | $ 0.119 | ||
| PDTA123EU,115 | Nexperia | 유사 제품 | SOT-323 | 50 | $ 0.3963 | ||
| DDTA114EUA-7-F | DIODES | 유사 제품 | SOT-323 | 1,115 | $ 0.0705 | ||
| NSVMUN5132T1G | onsemi | 유사 제품 | SC-70-3 | 2,900 | $0.0232 $0.0859 | ||
| ADTA114EUAQ-7 | DIODES | 유사 제품 | SOT-323 | 40 | $ 0.0421 |
5 개의 추가 대체 부품이 있습니다.모든 대체품 보기