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Zdjęcia poglądowe
Modele EDAEasyEDA
DIODES 2N7002K-7
| Producent | |
| Nr części prod. | 2N7002K-7 |
| Nr LCSC | C85047 |
| Opak. | SOT-23 |
| Numer Klienta | |
| Klucz. cechy | MOSFET N-CH 60V 380mA SOT-23 |
| Karta Katalogowa | DIODES 2N7002K-7 |
| Zgodność z RoHS | 5 dokumentów dostępnych |
| Części alternatywne | 5 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | DIODES | |
| Opak. | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 4.2pF | |
| Current - Continuous Drain(Id) | 380mA | |
| Ciss-Input Capacitance | 30pF | |
| Pd - Power Dissipation | 540mW | |
| Reverse Transfer Capacitance (Crss) | 2.9pF | |
| RDS(on) | 1.2Ω@10V;1.4Ω@5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 300pC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | DIODES | |
| Opak. | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 4.2pF | |
| Current - Continuous Drain(Id) | 380mA |
| Typ | Opis | |
|---|---|---|
| Ciss-Input Capacitance | 30pF | |
| Pd - Power Dissipation | 540mW | |
| Reverse Transfer Capacitance (Crss) | 2.9pF | |
| RDS(on) | 1.2Ω@10V;1.4Ω@5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 300pC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
This MOSFET is designed to minimize on-resistance (RDS(ON)) while maintaining excellent switching performance, making it ideal for high-efficiency power management applications.
Funkcje
Tłumaczenie AI
- Low on-resistance
- Low input capacitance
- Fast switching speed
- Low input/output leakage current
- ESD protection up to 2kV
- Fully lead-free and RoHS compliant
- Halogen- and antimony-free, "green" device
- Meets JEDEC standards (ref. AEC-Q) with high reliability
- Automotive-grade version (2N7002KQ) has a separate datasheet
Zastosowania
Tłumaczenie AI
- Motor control
- Power management
- Backlighting
Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
Na stanie: 445,590
445,590 W magazynie, wysyłka natychmiastowa
Minimum: 5Wielokrotność: 5Jednostka sprzedaży: Piece
Dodaj do Listy BOM
| Szt. | Cena jedn. | Suma całkowita |
|---|---|---|
| 5+ | $ 0.0836 | $ 0.42 |
| 50+ | $ 0.068 | $ 3.40 |
| 150+ | $ 0.06 | $ 9.00 |
| 500+ | $ 0.0534 | $ 26.70 |
| 3,000+ | $ 0.0461 | $ 138.30 |
| 6,000+ | $ 0.0445 | $ 267.00 |
Standardowa Obudowa3000/Full Reel | ||
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | DIODES | |
| Opak. | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 4.2pF | |
| Current - Continuous Drain(Id) | 380mA | |
| Ciss-Input Capacitance | 30pF | |
| Pd - Power Dissipation | 540mW | |
| Reverse Transfer Capacitance (Crss) | 2.9pF | |
| RDS(on) | 1.2Ω@10V;1.4Ω@5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 300pC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | DIODES | |
| Opak. | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 4.2pF | |
| Current - Continuous Drain(Id) | 380mA |
| Typ | Opis | |
|---|---|---|
| Ciss-Input Capacitance | 30pF | |
| Pd - Power Dissipation | 540mW | |
| Reverse Transfer Capacitance (Crss) | 2.9pF | |
| RDS(on) | 1.2Ω@10V;1.4Ω@5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 300pC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
This MOSFET is designed to minimize on-resistance (RDS(ON)) while maintaining excellent switching performance, making it ideal for high-efficiency power management applications.
Funkcje
Tłumaczenie AI
- Low on-resistance
- Low input capacitance
- Fast switching speed
- Low input/output leakage current
- ESD protection up to 2kV
- Fully lead-free and RoHS compliant
- Halogen- and antimony-free, "green" device
- Meets JEDEC standards (ref. AEC-Q) with high reliability
- Automotive-grade version (2N7002KQ) has a separate datasheet
Zastosowania
Tłumaczenie AI
- Motor control
- Power management
- Backlighting
C85047 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Części alternatywne
| MPN | Producent | Typ alternatywny | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|---|
| SP60N1K1T2 | Siliup | Podobne | SOT-23 | 3,000 | $ 0.0196 | ||
| H2N7002K7 | HXY MOSFET | Podobne | SOT-23 | 880 | $0.0248 $0.0281 | ||
| 2N7002K | JSMSEMI | Podobne | SOT-23 | 165,750 | $0.0142 $0.0149 | ||
| 2N7002BK-JSM | JSMSEMI | Podobne | SOT-23 | 2,940 | $ 0.0219 | ||
| 2N7002P,215-JSM | JSMSEMI | Podobne | SOT-23 | 2,960 | $ 0.0246 |