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ADI LTC4449EDCB#TRPBF

Hersteller
Herst.-Teilenr.
LTC4449EDCB#TRPBF
LCSC-Nr.
C688593
Verp.
DFN-8-EP(2x3)
Kundennummer
Hauptmerkm.
High Speed Synchronous N-Channel MOSFET Driver
DatenblattADI LTC4449EDCB#TRPBF
RoHS-Konformität1 Dokumente verfügbar
Alternativteile2
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Vorrätig: 10
10 Ab Lager, sofort versandfertig
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
Stk.E-PreisGesamtbetrag
1+$ 5.1473$ 5.15
10+$ 4.4053$ 44.05
30+$ 3.9643$ 118.93
100+$ 3.5185$ 351.85
500+$ 3.3125$ 1656.25
1,000+$ 3.2207$ 3220.70
Standardgehäuse2500/Full Reel
Besserer Preis bei größerer Menge?
$

Produktspezifikationen

Alle
TypBeschreibung
KategorieIntegrated Circuits (ICs)/Power Management (PMIC)/Gate Drivers
HerstellerADI
Verp.DFN-8-EP(2x3)
Input Logic Level - Low-
Low Level Delay Time14ns
High Level Delay Time13ns
Quiescent Current-
Input Logic Level - High-
Voltage - Supply4V~6.5V
Operating Temperature-40℃~+125℃
Driven ConfigurationHalf-Bridge
Current - Output Low(IOL)4.5A
Rise Time8ns
Fall Time7ns
FeaturesEnable shutdown;Interleaved conduction protection
Current - Output High(IOH)3.2A
Load TypeMOSFET

Beschreibung

KI-Übersetzung

The LTC4449 is a high frequency gate driver that is designed to drive two N-Channel MOSFETs in a synchronous DC/DC converter. The powerful rail-to-rail driver capability reduces switching losses in MOSFETs with high gate capacitance. The LTC4449 features a separate supply for the input logic to match the signal swing of the controller IC. If the input signal is not being driven, the LTC4449 activates a shutdown mode that turns off both external MOSFETs. The input logic signal is internally level-shifted to the bootstrapped supply, which functions at up to 42V above ground. The LTC4449 contains undervoltage lockout circuits on both the driver and logic supplies that turn off the external MOSFETs when an undervoltage condition is present. An adaptive shoot-through protection feature is also built-in to prevent the power loss resulting from MOSFET crossconduction current. The LTC4449 is available in the 2mm × 3mm DFN package.

Merkmale

KI-Übersetzung
  • 4V to 6.5V VCC Operating Voltage
  • 38V Maximum Input Supply Voltage
  • Adaptive Shoot-Through Protection
  • Rail-to-Rail Output Drivers
  • 3.2A Peak Pull-Up Current
  • 4.5A Peak Pull-Down Current
  • 8ns TG Rise Time Driving 3000pF Load
  • 7ns TG Fall Time Driving 3000pF Load
  • Separate Supply to Match PWM Controller
  • Drives Dual N-Channel MOSFETs
  • Undervoltage Lockout
  • Low Profile (0.75mm) 2mm × 3mm DFN Package

Anwendungen

KI-Übersetzung
  • Distributed Power Architectures
  • High Density Power Modules
  • Synchronous Buck Converter Driver
  • LTC4449 Driving 3000pF Capacitive Loads

Alternativteile

MPNHerstellerVerpackungVerfügbarkeitStückpreis
LTC4449IDCB#TRPBFADIDFN-8-EP(2x3)54$ 7.8529
LTC4449IDCB#TRMPBFADIDFN-8-EP(2x3)0$ 2.5915