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Littelfuse IXFT120N15P
| Hersteller | |
| Herst.-Teilenr. | IXFT120N15P |
| LCSC-Nr. | C6577977 |
| Verp. | TO-268AA |
| Kundennummer | |
| Hauptmerkm. | 150V 120A 3V 600W 1 N-channel TO-268AA Single FETs, MOSFETs RoHS |
| Datenblatt | Littelfuse IXFT120N15P |
| Alternativteile | 10 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Littelfuse | |
| Verp. | TO-268AA | |
| Drain to Source Voltage | 150V | |
| Operating Temperature | -55℃~+175℃ | |
| Current - Continuous Drain(Id) | 120A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 600W | |
| Reverse Transfer Capacitance (Crss@Vds) | 330pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.9nF | |
| Gate Charge(Qg) | 150nC@10V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Littelfuse | |
| Verp. | TO-268AA | |
| Drain to Source Voltage | 150V | |
| Operating Temperature | -55℃~+175℃ | |
| Current - Continuous Drain(Id) | 120A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 600W | |
| Reverse Transfer Capacitance (Crss@Vds) | 330pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.9nF | |
| Gate Charge(Qg) | 150nC@10V |
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Beschreibung
KI-Übersetzung
The third generation Power MOSFETs provide designers with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4-lead DIP package is a low cost, machine insertable package style that offers a wide variety of configurations for stacking on standard 0.1 inch centers. The dual drain serves as a thermal bond to the mounting surface and allows power dissipation levels to 1 W.
Merkmale
KI-Übersetzung
- Industry-standard package
- Unclamped Inductive Switching (UIS) rated
- Low package inductance, easy to drive and protect
- Easy to mount
- Space-saving
- High power density
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Nicht vorrätig
Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 2.4062 | $ 2.41 |
| 210+ | $ 0.9601 | $ 201.62 |
| 510+ | $ 0.9293 | $ 473.94 |
| 990+ | $ 0.9124 | $ 903.28 |
Standardgehäuse30/Full Box | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Littelfuse | |
| Verp. | TO-268AA | |
| Drain to Source Voltage | 150V | |
| Operating Temperature | -55℃~+175℃ | |
| Current - Continuous Drain(Id) | 120A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 600W | |
| Reverse Transfer Capacitance (Crss@Vds) | 330pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.9nF | |
| Gate Charge(Qg) | 150nC@10V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Littelfuse | |
| Verp. | TO-268AA | |
| Drain to Source Voltage | 150V | |
| Operating Temperature | -55℃~+175℃ | |
| Current - Continuous Drain(Id) | 120A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 600W | |
| Reverse Transfer Capacitance (Crss@Vds) | 330pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.9nF | |
| Gate Charge(Qg) | 150nC@10V |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
The third generation Power MOSFETs provide designers with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4-lead DIP package is a low cost, machine insertable package style that offers a wide variety of configurations for stacking on standard 0.1 inch centers. The dual drain serves as a thermal bond to the mounting surface and allows power dissipation levels to 1 W.
Merkmale
KI-Übersetzung
- Industry-standard package
- Unclamped Inductive Switching (UIS) rated
- Low package inductance, easy to drive and protect
- Easy to mount
- Space-saving
- High power density
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| IXFT120N30X3HV | Littelfuse/IXYS | TO-268HV | 3 | $ 35.6558 | ||
| IXFT150N30X3HV | Littelfuse/IXYS | TO-268HV | 1 | $ 29.9835 | ||
| IXTT220N20X4HV | Littelfuse/IXYS | TO-268HV | 3 | $ 22.4152 | ||
| IXFT170N25X3HV | Littelfuse/IXYS | TO-268HV | 3 | $ 26.175 | ||
| IXFT220N20X3HV | Littelfuse/IXYS | TO-268HV | 10 | $ 26.5264 | ||
| IXTT120N15P | Littelfuse/IXYS | TO-268AA | 0 | $ 18.0426 | ||
| IXFT180N20X3HV | Littelfuse | TO-268HV | 0 | $ 4.0832 | ||
| IXFT150N25X3HV | Littelfuse/IXYS | TO-268HV | 0 | $ 36.9456 | ||
| APT20M45SVRG | MICROCHIP | TO-268-3 | 0 | $ 13.5412 | ||
| IXFT150N17T2 | Littelfuse | TO-268HV | 0 | $ 2.2462 |