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onsemi FFSB2065B-F085
| Produttore | |
| Cod. Prod. | FFSB2065B-F085 |
| Cod. LCSC | C605085 |
| Imballo | TO-263-2 |
| Numero Cliente | |
| Attr. chiave | DIODE SIC 650V 22.8A TO-263-2 |
| Scheda Tecnica | onsemi FFSB2065B-F085 |
| Conformità RoHS | 4 documenti disponibili |
| Parti alternative | 5 |
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Produttore | onsemi | |
| Imballo | TO-263-2 | |
| Operating Junction Temperature Range | -55℃~+175℃ | |
| Diode Configuration | Standalone | |
| Voltage - DC Reverse (Vr) (Max) | 650V | |
| Voltage - Forward(Vf@If) | 1.38V@20A | |
| Reverse Leakage Current (Ir) | 500nA@650V | |
| Non-Repetitive Peak Forward Surge Current | 882A | |
| Current - Rectified | 22.8A |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Produttore | onsemi | |
| Imballo | TO-263-2 | |
| Operating Junction Temperature Range | -55℃~+175℃ | |
| Diode Configuration | Standalone |
| Tipo | Descrizione | |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 650V | |
| Voltage - Forward(Vf@If) | 1.38V@20A | |
| Reverse Leakage Current (Ir) | 500nA@650V | |
| Non-Repetitive Peak Forward Surge Current | 882A | |
| Current - Rectified | 22.8A |
Descrizione
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost.
Caratteristiche
- Max Junction Temperature 175°C
- Avalanche Rated 94 mJ
- High Surge Current Capacity
- Positive Temperature Coefficient
- Ease of Paralleling
- No Reverse Recovery/No Forward Recovery
- AEC−Q101 Qualified and PPAP Capable
- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
Applicazioni
- Automotive HEV−EV Onboard Chargers
- Automotive HEV−EV DC−DC Converters
| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 1+ | $ 5.7262 | $ 5.73 |
| 10+ | $ 5.5997 | $ 56.00 |
| 30+ | $ 5.5158 | $ 165.47 |
| 100+ | $ 5.4304 | $ 543.04 |
Package Standard800/Full Reel | ||
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Produttore | onsemi | |
| Imballo | TO-263-2 | |
| Operating Junction Temperature Range | -55℃~+175℃ | |
| Diode Configuration | Standalone | |
| Voltage - DC Reverse (Vr) (Max) | 650V | |
| Voltage - Forward(Vf@If) | 1.38V@20A | |
| Reverse Leakage Current (Ir) | 500nA@650V | |
| Non-Repetitive Peak Forward Surge Current | 882A | |
| Current - Rectified | 22.8A |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Produttore | onsemi | |
| Imballo | TO-263-2 | |
| Operating Junction Temperature Range | -55℃~+175℃ | |
| Diode Configuration | Standalone |
| Tipo | Descrizione | |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 650V | |
| Voltage - Forward(Vf@If) | 1.38V@20A | |
| Reverse Leakage Current (Ir) | 500nA@650V | |
| Non-Repetitive Peak Forward Surge Current | 882A | |
| Current - Rectified | 22.8A |
Descrizione
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost.
Caratteristiche
- Max Junction Temperature 175°C
- Avalanche Rated 94 mJ
- High Surge Current Capacity
- Positive Temperature Coefficient
- Ease of Paralleling
- No Reverse Recovery/No Forward Recovery
- AEC−Q101 Qualified and PPAP Capable
- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
Applicazioni
- Automotive HEV−EV Onboard Chargers
- Automotive HEV−EV DC−DC Converters
C605085 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | |
| USHTS | |
| TARIC | |
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | |
| USHTS | |
| TARIC |
| Tipo | Dettagli |
|---|---|
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS | |
Parti alternative
| MPN | Produttore | Tipo alternativo | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|---|
| FFSB3065B-F085 | onsemi | Simili | TO-263-2 | 18 | $ 9.996 | ||
| FFSB3065B | onsemi | Simili | D2PAK-2(TO-263) | 11 | $ 8.1861 | ||
| HC3D10120G | HXY MOSFET | Simili | TO-263 | 5 | $ 3.9135 | ||
| HC3D12065G | HXY MOSFET | Simili | TO-263 | 200 | $ 2.4183 | ||
| CI10S120M3 | Tokmas | Simili | TO-263 | 803 | $ 1.8849 |