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VBsemi Elec 2SK3663-T1-A-VB
| Producent | VBsemi ElecAsian Brands |
| Nr części prod. | 2SK3663-T1-A-VB |
| Nr LCSC | C5456474 |
| Opak. | SOT-323(SC-70) |
| Numer Klienta | |
| Klucz. cechy | MOSFET N-CH 20V 4A SOT-323(SC-70) |
| Karta Katalogowa | VBsemi Elec 2SK3663-T1-A-VB |
| Części alternatywne | 5 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | VBsemi Elec | |
| Opak. | SOT-323(SC-70) | |
| Output Capacitance(Coss) | - | |
| Pd - Power Dissipation | 1.56W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 4A | |
| Gate Threshold Voltage (Vgs(th)) | 1.3V | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 36mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 8.8nC | |
| Vgs | ±12V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | VBsemi Elec | |
| Opak. | SOT-323(SC-70) | |
| Output Capacitance(Coss) | - | |
| Pd - Power Dissipation | 1.56W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 4A |
| Typ | Opis | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.3V | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 36mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 8.8nC | |
| Vgs | ±12V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
2N70 is a high-voltage MOSFET featuring superior characteristics such as fast switching time, low gate charge, low on-resistance, and high avalanche ruggedness. This power MOSFET is commonly used in high-speed switching applications including power supplies, PWM motor control, high-efficiency DC-DC converters, and bridge circuits.
Funkcje
Tłumaczenie AI
- Compliant with halogen-free requirements as defined by IEC 61249-2-21
- Trench power MOSFET
- 100% Rg tested
- Compliant with RoHS Directive 2002/95/EC
Zastosowania
Tłumaczenie AI
- Portable devices
- Load switches
- Battery switches
- Load switching for motors, relays, and solenoids
Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
Brak w magazynie
Powiadom mnie
Minimum: 5Wielokrotność: 5Jednostka sprzedaży: Piece
Dodaj do Listy BOM
| Szt. | Cena jedn.(Tylko do wglądu) | Suma całkowita |
|---|---|---|
| 5+ | $ 0.1561 | $ 0.78 |
| 50+ | $ 0.1326 | $ 6.63 |
| 150+ | $ 0.1209 | $ 18.14 |
| 500+ | $ 0.1121 | $ 56.05 |
| 3,000+ | $ 0.1051 | $ 315.30 |
| 6,000+ | $ 0.1015 | $ 609.00 |
Standardowa Obudowa3000/Full Reel | ||
Lepsza cena za większą ilość?
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | VBsemi Elec | |
| Opak. | SOT-323(SC-70) | |
| Output Capacitance(Coss) | - | |
| Pd - Power Dissipation | 1.56W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 4A | |
| Gate Threshold Voltage (Vgs(th)) | 1.3V | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 36mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 8.8nC | |
| Vgs | ±12V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | VBsemi Elec | |
| Opak. | SOT-323(SC-70) | |
| Output Capacitance(Coss) | - | |
| Pd - Power Dissipation | 1.56W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 4A |
| Typ | Opis | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.3V | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 36mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 8.8nC | |
| Vgs | ±12V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
2N70 is a high-voltage MOSFET featuring superior characteristics such as fast switching time, low gate charge, low on-resistance, and high avalanche ruggedness. This power MOSFET is commonly used in high-speed switching applications including power supplies, PWM motor control, high-efficiency DC-DC converters, and bridge circuits.
Funkcje
Tłumaczenie AI
- Compliant with halogen-free requirements as defined by IEC 61249-2-21
- Trench power MOSFET
- 100% Rg tested
- Compliant with RoHS Directive 2002/95/EC
Zastosowania
Tłumaczenie AI
- Portable devices
- Load switches
- Battery switches
- Load switching for motors, relays, and solenoids
C5456474 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Części alternatywne
| MPN | Producent | Typ alternatywny | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|---|
| RUF025N02-VB | VBsemi Elec | Podobne | SOT-323(SC-70) | 30 | $0.1331 $0.1401 | ||
| NTS4409NT1G-VB | VBsemi Elec | Podobne | SOT-323(SC-70) | 760 | $0.1009 $0.1186 | ||
| AO7400-VB | VBsemi Elec | Podobne | SOT-323(SC-70) | 495 | $0.0614 $0.0646 | ||
| 2SK1829-VB | VBsemi Elec | Podobne | SOT-323(SC-70) | 5 | $0.0929 $0.1092 | ||
| 2SK1658-T1-A-VB | VBsemi Elec | Podobne | SOT-323(SC-70) | 15 | $0.0964 $0.1133 |
5 więcej części alternatywnych.Wyświetl wszystkie zamienniki