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Modelli EDAEasyEDA
onsemi NSVMSD1819A-RT1G
| Produttore | |
| Cod. Prod. | NSVMSD1819A-RT1G |
| Cod. LCSC | C5206344 |
| Imballo | SC-70-3 |
| Numero Cliente | |
| Attr. chiave | TRANS NPN 50V 100mA SC-70-3 |
| Scheda Tecnica | onsemi NSVMSD1819A-RT1G |
| Conformità RoHS | 3 documenti disponibili |
| Parti alternative | 10 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Produttore | onsemi | |
| Imballo | SC-70-3 | |
| Current - Collector Cutoff | 100nA | |
| Operating Temperature | -55℃~+150℃ | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | 7V | |
| DC Current Gain | 210 | |
| Pd - Power Dissipation | 150mW | |
| Current - Collector(Ic) | 100mA | |
| Configuration | Standalone | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 500mV |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Produttore | onsemi | |
| Imballo | SC-70-3 | |
| Current - Collector Cutoff | 100nA | |
| Operating Temperature | -55℃~+150℃ | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | 7V |
| Tipo | Descrizione | |
|---|---|---|
| DC Current Gain | 210 | |
| Pd - Power Dissipation | 150mW | |
| Current - Collector(Ic) | 100mA | |
| Configuration | Standalone | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 500mV |
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Descrizione
Traduzione AI
This NPN Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications.
Caratteristiche
Traduzione AI
- High hFE, 210−460
- Low VCE(sat), <0.5 V
- Moisture Sensitivity Level 1
- ESD Protection: Human Body Model >4000 V, Machine Model >400 V
- NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
- These Devices are Pb −Free, Halogen Free/BFR Free and are RoHS Compliant
Garanzia su ogni ordine
100% Autentico · Reso o Sostituzione entro 30 Giorni
Disponibile: 15
15 Pronta consegna
Minimo: 5Multiplo: 5Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit. | Importo totale |
|---|---|---|
| 5+ | $ 0.0911 | $ 0.46 |
| 50+ | $ 0.0729 | $ 3.65 |
| 150+ | $ 0.0638 | $ 9.57 |
| 500+ | $ 0.0569 | $ 28.45 |
| 3,000+ | $ 0.0515 | $ 154.50 |
| 6,000+ | $ 0.0488 | $ 292.80 |
Package Standard3000/Full Reel | ||
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Produttore | onsemi | |
| Imballo | SC-70-3 | |
| Current - Collector Cutoff | 100nA | |
| Operating Temperature | -55℃~+150℃ | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | 7V | |
| DC Current Gain | 210 | |
| Pd - Power Dissipation | 150mW | |
| Current - Collector(Ic) | 100mA | |
| Configuration | Standalone | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 500mV |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Produttore | onsemi | |
| Imballo | SC-70-3 | |
| Current - Collector Cutoff | 100nA | |
| Operating Temperature | -55℃~+150℃ | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | 7V |
| Tipo | Descrizione | |
|---|---|---|
| DC Current Gain | 210 | |
| Pd - Power Dissipation | 150mW | |
| Current - Collector(Ic) | 100mA | |
| Configuration | Standalone | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 500mV |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
This NPN Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications.
Caratteristiche
Traduzione AI
- High hFE, 210−460
- Low VCE(sat), <0.5 V
- Moisture Sensitivity Level 1
- ESD Protection: Human Body Model >4000 V, Machine Model >400 V
- NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
- These Devices are Pb −Free, Halogen Free/BFR Free and are RoHS Compliant
C5206344 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
Parti alternative
| MPN | Produttore | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| AD-BC846W-B | JSCJ | SOT-323 | 380 | $0.0133 $0.0426 | ||
| 2SC1623 | YONGYUTAI | SOT-323 | 2,460 | $ 0.0284 | ||
| 2SC1623W | CBI | SOT-323 | 2,000 | $ 0.0179 | ||
| BC850BW,115 | Nexperia | SOT-323 | 340 | $ 0.0495 | ||
| LBC846BWT1G | LRC | SC-70 | 900 | $ 0.0294 | ||
| L2SC4081RT1G | LRC | SC-70 | 0 | $ 0.0262 | ||
| 2PD601ARW,115 | Nexperia | SOT-323-3 | 0 | $ 0.0505 | ||
| BC846BW | YFW | SOT-323 | 0 | $0.0102 $0.0169 | ||
| BC846BWQ | YANGJIE | SOT-323 | 0 | $ 0.0321 | ||
| BC846BWHE3-TP | MCC | SOT-323 | 0 | $ 0.0312 |