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EDA-ModelleEasyEDA
JSCJ CJAC70N03
| Hersteller | JSCJAsian Brands |
| Herst.-Teilenr. | CJAC70N03 |
| LCSC-Nr. | C504094 |
| Verp. | PDFNWB-8L-EP(5x6) |
| Kundennummer | |
| Hauptmerkm. | 2W 30V 70A 1V 4.3mΩ@10V 1 N-channel N-Channel PDFNWB-8L-EP(5x6) Single FETs, MOSFETs RoHS |
| Datenblatt | JSCJ CJAC70N03 |
| Alternativteile | 5 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | JSCJ | |
| Verp. | PDFNWB-8L-EP(5x6) | |
| Output Capacitance(Coss) | 320pF | |
| Pd - Power Dissipation | 2W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 70A | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 480pF | |
| RDS(on) | 4.3mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.96nF | |
| Gate Charge(Qg) | 45nC | |
| Vgs | ±20V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | JSCJ | |
| Verp. | PDFNWB-8L-EP(5x6) | |
| Output Capacitance(Coss) | 320pF | |
| Pd - Power Dissipation | 2W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 70A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 480pF | |
| RDS(on) | 4.3mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.96nF | |
| Gate Charge(Qg) | 45nC | |
| Vgs | ±20V | |
| Type | N-Channel |
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Beschreibung
KI-Übersetzung
CJAC70N03 utilizes advanced trench technology and design to deliver excellent RDS(ON) with low gate charge. It is suitable for a wide range of applications.
Merkmale
KI-Übersetzung
- Battery switching
- Load switching
- High-density cell design for ultra-low RDS(ON)
- Fully characterized avalanche voltage and current ratings
- Excellent stability and consistency at high EAS
- Superior package for enhanced thermal dissipation
- Special process technology for high ESD capability
Anwendungen
KI-Übersetzung
- Switching power supplies and general-purpose applications
- Hard-switching and high-frequency circuits
- Uninterruptible power supplies
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Nicht vorrätig
Benachrichtigen
Minimum: 5Vielfaches: 5Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 5+ | $ 0.4739 | $ 2.37 |
| 50+ | $ 0.4039 | $ 20.20 |
| 150+ | $ 0.374 | $ 56.10 |
| 500+ | $ 0.3366 | $ 168.30 |
| 2,500+ | $ 0.3199 | $ 799.75 |
| 5,000+ | $ 0.3099 | $ 1549.50 |
Standardgehäuse5000/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | JSCJ | |
| Verp. | PDFNWB-8L-EP(5x6) | |
| Output Capacitance(Coss) | 320pF | |
| Pd - Power Dissipation | 2W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 70A | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 480pF | |
| RDS(on) | 4.3mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.96nF | |
| Gate Charge(Qg) | 45nC | |
| Vgs | ±20V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | JSCJ | |
| Verp. | PDFNWB-8L-EP(5x6) | |
| Output Capacitance(Coss) | 320pF | |
| Pd - Power Dissipation | 2W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 70A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 480pF | |
| RDS(on) | 4.3mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.96nF | |
| Gate Charge(Qg) | 45nC | |
| Vgs | ±20V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
CJAC70N03 utilizes advanced trench technology and design to deliver excellent RDS(ON) with low gate charge. It is suitable for a wide range of applications.
Merkmale
KI-Übersetzung
- Battery switching
- Load switching
- High-density cell design for ultra-low RDS(ON)
- Fully characterized avalanche voltage and current ratings
- Excellent stability and consistency at high EAS
- Superior package for enhanced thermal dissipation
- Special process technology for high ESD capability
Anwendungen
KI-Übersetzung
- Switching power supplies and general-purpose applications
- Hard-switching and high-frequency circuits
- Uninterruptible power supplies
C504094 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Alternativtyp | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|---|
| CJAC90SN12 | JSCJ | Ähnliche | PDFNWB5x6-8L | 8,670 | $ 1.6503 | ||
| CJAC70SN15 | JSCJ | Ähnliche | PDFNWB5x6-8L | 423 | $ 0.8362 | ||
| CJAC110SN10A | JSCJ | Ähnliche | PDFNWB5x6-8L | 6 | $ 1.2016 | ||
| CJAC2R0SN04C | JSCJ | Ähnliche | PDFNWB5x6-8L | 3,117 | $ 0.3559 | ||
| CJAC110N03A | JSCJ | Ähnliche | PDFNWB5x6-8L | 4,916 | $ 0.4587 |
5 weitere Alternativteile.Alle Ersatzprodukte anzeigen