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EDA-ModelleEasyEDA
JSCJ CJAB20N03
| Hersteller | JSCJAsian Brands |
| Herst.-Teilenr. | CJAB20N03 |
| LCSC-Nr. | C504062 |
| Verp. | PDFNWB3.3x3.3-8L |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH 30V 20A PDFNWB3.3x3.3-8L |
| Datenblatt | JSCJ CJAB20N03 |
| Alternativteile | 5 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | JSCJ | |
| Verp. | PDFNWB3.3x3.3-8L | |
| Output Capacitance(Coss) | 138pF | |
| Ciss-Input Capacitance | 823pF | |
| Pd - Power Dissipation | 1.5W | |
| Operating Temperature | - | |
| Configuration | - | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 20A | |
| Reverse Transfer Capacitance (Crss) | 100pF | |
| RDS(on) | 8.5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 13nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | JSCJ | |
| Verp. | PDFNWB3.3x3.3-8L | |
| Output Capacitance(Coss) | 138pF | |
| Ciss-Input Capacitance | 823pF | |
| Pd - Power Dissipation | 1.5W | |
| Operating Temperature | - | |
| Configuration | - | |
| Drain to Source Voltage | 30V |
| Typ | Beschreibung | |
|---|---|---|
| Current - Continuous Drain(Id) | 20A | |
| Reverse Transfer Capacitance (Crss) | 100pF | |
| RDS(on) | 8.5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 13nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
The CJAB20N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications
Merkmale
KI-Übersetzung
- Battery switch
- Load switch
- High density cell design for ultra low RDS(ON)
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Special process technology for high ESD capability
Anwendungen
KI-Übersetzung
- Hard switched and high frequency circuits
- Uninterruptible Power Supply
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Nicht vorrätig
Benachrichtigen
Minimum: 5Vielfaches: 5Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 5+ | $ 0.1561 | $ 0.78 |
| 50+ | $ 0.1214 | $ 6.07 |
| 150+ | $ 0.1065 | $ 15.98 |
| 500+ | $ 0.088 | $ 44.00 |
| 2,500+ | $ 0.0797 | $ 199.25 |
| 5,000+ | $ 0.0747 | $ 373.50 |
Standardgehäuse5000/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | JSCJ | |
| Verp. | PDFNWB3.3x3.3-8L | |
| Output Capacitance(Coss) | 138pF | |
| Ciss-Input Capacitance | 823pF | |
| Pd - Power Dissipation | 1.5W | |
| Operating Temperature | - | |
| Configuration | - | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 20A | |
| Reverse Transfer Capacitance (Crss) | 100pF | |
| RDS(on) | 8.5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 13nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | JSCJ | |
| Verp. | PDFNWB3.3x3.3-8L | |
| Output Capacitance(Coss) | 138pF | |
| Ciss-Input Capacitance | 823pF | |
| Pd - Power Dissipation | 1.5W | |
| Operating Temperature | - | |
| Configuration | - | |
| Drain to Source Voltage | 30V |
| Typ | Beschreibung | |
|---|---|---|
| Current - Continuous Drain(Id) | 20A | |
| Reverse Transfer Capacitance (Crss) | 100pF | |
| RDS(on) | 8.5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 13nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
The CJAB20N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications
Merkmale
KI-Übersetzung
- Battery switch
- Load switch
- High density cell design for ultra low RDS(ON)
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Special process technology for high ESD capability
Anwendungen
KI-Übersetzung
- Hard switched and high frequency circuits
- Uninterruptible Power Supply
C504062 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Alternativtyp | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|---|
| CJAB25N04 | JSCJ | Ähnliche | PDFNWB3.3x3.3-8L | 565 | $ 0.2438 | ||
| CJAB55N03S | JSCJ | Ähnliche | PDFNWB3.3x3.3-8L | 2,100 | $ 0.2213 | ||
| CJAB25N04A | JSCJ | Ähnliche | PDFNWB3.3x3.3-8L | 50 | $ 0.1966 | ||
| CJAB25N04S | JSCJ | Ähnliche | PDFNWB3.3x3.3-8L | 2,015 | $ 0.2063 | ||
| CJAB35N03S | JSCJ | Ähnliche | PDFNWB3.3x3.3-8L | 2,575 | $ 0.1269 |