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Zdjęcia poglądowe
Modele EDAEasyEDA
onsemi FDPF2710T
| Producent | |
| Nr części prod. | FDPF2710T |
| Nr LCSC | C463723 |
| Opak. | TO-220F-3 |
| Numer Klienta | |
| Klucz. cechy | 62.5W 250V 25A 42.5mΩ@10V 1 N-channel N-Channel TO-220F-3 Single FETs, MOSFETs RoHS |
| Karta Katalogowa | onsemi FDPF2710T |
| Zgodność z RoHS | 4 dokumentów dostępnych |
| Części alternatywne | 5 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | onsemi | |
| Opak. | TO-220F-3 | |
| Output Capacitance(Coss) | 426pF | |
| Ciss-Input Capacitance | 7.28nF | |
| Pd - Power Dissipation | 62.5W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 250V | |
| Current - Continuous Drain(Id) | 25A | |
| Reverse Transfer Capacitance (Crss) | 146pF | |
| RDS(on) | 42.5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 101nC@125V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | onsemi | |
| Opak. | TO-220F-3 | |
| Output Capacitance(Coss) | 426pF | |
| Ciss-Input Capacitance | 7.28nF | |
| Pd - Power Dissipation | 62.5W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 250V |
| Typ | Opis | |
|---|---|---|
| Current - Continuous Drain(Id) | 25A | |
| Reverse Transfer Capacitance (Crss) | 146pF | |
| RDS(on) | 42.5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 101nC@125V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
This N-channel MOSFET is fabricated using the advanced PowerTrench® process, optimized to minimize on-resistance while maintaining superior switching performance.
Funkcje
Tłumaczenie AI
- RDS(on) = 36.3 mΩ (typical) @ VGS = 10 V, ID = 25 A
- Fast switching speed
- Low gate charge
- High-performance trench technology for ultra-low RDS(on)
- High power and large current handling capability
- RoHS compliant
Zastosowania
Tłumaczenie AI
- Consumer Electronics
- Synchronous Rectification
Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
Brak w magazynie
Powiadom mnie
Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
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| Szt. | Cena jedn.(Tylko do wglądu) | Suma całkowita |
|---|---|---|
| 1+ | $ 3.139 | $ 3.14 |
| 10+ | $ 3.0715 | $ 30.72 |
| 30+ | $ 3.0254 | $ 90.76 |
| 100+ | $ 2.9794 | $ 297.94 |
Standardowa Obudowa1000/Full Tube | ||
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | onsemi | |
| Opak. | TO-220F-3 | |
| Output Capacitance(Coss) | 426pF | |
| Ciss-Input Capacitance | 7.28nF | |
| Pd - Power Dissipation | 62.5W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 250V | |
| Current - Continuous Drain(Id) | 25A | |
| Reverse Transfer Capacitance (Crss) | 146pF | |
| RDS(on) | 42.5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 101nC@125V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | onsemi | |
| Opak. | TO-220F-3 | |
| Output Capacitance(Coss) | 426pF | |
| Ciss-Input Capacitance | 7.28nF | |
| Pd - Power Dissipation | 62.5W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 250V |
| Typ | Opis | |
|---|---|---|
| Current - Continuous Drain(Id) | 25A | |
| Reverse Transfer Capacitance (Crss) | 146pF | |
| RDS(on) | 42.5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 101nC@125V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
This N-channel MOSFET is fabricated using the advanced PowerTrench® process, optimized to minimize on-resistance while maintaining superior switching performance.
Funkcje
Tłumaczenie AI
- RDS(on) = 36.3 mΩ (typical) @ VGS = 10 V, ID = 25 A
- Fast switching speed
- Low gate charge
- High-performance trench technology for ultra-low RDS(on)
- High power and large current handling capability
- RoHS compliant
Zastosowania
Tłumaczenie AI
- Consumer Electronics
- Synchronous Rectification
C463723 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Części alternatywne
| MPN | Producent | Typ alternatywny | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|---|
| CMF60R078 | Cmos | Podobne | TO-220F | 8 | $ 2.2813 | ||
| FDPF44N25T | onsemi | Podobne | TO-220F | 1 | $ 2.2027 | ||
| STF42N65M5 | ST | Podobne | TO-220FP | 37 | $ 9.0203 | ||
| RCX511N25 | ROHM | Podobne | TO-220FM | 3 | $ 4.4342 | ||
| CMF65R160SD | Cmos | Podobne | TO-220F | 76 | $1.2113 $1.275 |