- Rozmieszczenie wyprowadzeń
- Footprint
Zdjęcia poglądowe
Modele EDAEasyEDA
onsemi FDMC86520L
| Producent | |
| Nr części prod. | FDMC86520L |
| Nr LCSC | C462734 |
| Opak. | Power-33-8 |
| Numer Klienta | |
| Klucz. cechy | 40W 60V 22A 7.9mΩ@10V 1 N-channel N-Channel Power-33-8 Single FETs, MOSFETs RoHS |
| Karta Katalogowa | onsemi FDMC86520L |
| Zgodność z RoHS | 4 dokumentów dostępnych |
| Części alternatywne | 5 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | onsemi | |
| Opak. | Power-33-8 | |
| Output Capacitance(Coss) | 638pF | |
| Ciss-Input Capacitance | 4.55nF | |
| Pd - Power Dissipation | 40W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 22A | |
| Reverse Transfer Capacitance (Crss) | 40pF | |
| RDS(on) | 7.9mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 64nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | onsemi | |
| Opak. | Power-33-8 | |
| Output Capacitance(Coss) | 638pF | |
| Ciss-Input Capacitance | 4.55nF | |
| Pd - Power Dissipation | 40W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V |
| Typ | Opis | |
|---|---|---|
| Current - Continuous Drain(Id) | 22A | |
| Reverse Transfer Capacitance (Crss) | 40pF | |
| RDS(on) | 7.9mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 64nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
This N-channel MOSFET is designed to improve overall efficiency and minimize switching node ringing in DC/DC converters using synchronous or conventional switching PWM controllers. It is optimized for low gate charge, low rDS(on), fast switching speed, and body diode reverse recovery performance.
Funkcje
Tłumaczenie AI
- Maximum rDS(on) = 7.9 mΩ at VGS = 10 V, ID = 13.5 A
- Maximum rDS(on) = 11.7 mΩ at VGS = 4.5 V, ID = 11.5 A
- Low profile - Power 33 package maximum height 1 mm
- 100% UI1L tested
- RoHS compliant
Zastosowania
Tłumaczenie AI
- Isolated DC-DC primary switch
- Synchronous rectifier
- Load switch
Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
Brak w magazynie
Powiadom mnie
Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
Dodaj do Listy BOM
| Szt. | Cena jedn.(Tylko do wglądu) | Suma całkowita |
|---|---|---|
| 1+ | $ 1.2662 | $ 1.27 |
| 10+ | $ 1.2386 | $ 12.39 |
| 30+ | $ 1.2202 | $ 36.61 |
| 100+ | $ 1.2018 | $ 120.18 |
Standardowa Obudowa3000/Full Reel | ||
Lepsza cena za większą ilość?
$
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | onsemi | |
| Opak. | Power-33-8 | |
| Output Capacitance(Coss) | 638pF | |
| Ciss-Input Capacitance | 4.55nF | |
| Pd - Power Dissipation | 40W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 22A | |
| Reverse Transfer Capacitance (Crss) | 40pF | |
| RDS(on) | 7.9mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 64nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | onsemi | |
| Opak. | Power-33-8 | |
| Output Capacitance(Coss) | 638pF | |
| Ciss-Input Capacitance | 4.55nF | |
| Pd - Power Dissipation | 40W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V |
| Typ | Opis | |
|---|---|---|
| Current - Continuous Drain(Id) | 22A | |
| Reverse Transfer Capacitance (Crss) | 40pF | |
| RDS(on) | 7.9mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 64nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
This N-channel MOSFET is designed to improve overall efficiency and minimize switching node ringing in DC/DC converters using synchronous or conventional switching PWM controllers. It is optimized for low gate charge, low rDS(on), fast switching speed, and body diode reverse recovery performance.
Funkcje
Tłumaczenie AI
- Maximum rDS(on) = 7.9 mΩ at VGS = 10 V, ID = 13.5 A
- Maximum rDS(on) = 11.7 mΩ at VGS = 4.5 V, ID = 11.5 A
- Low profile - Power 33 package maximum height 1 mm
- 100% UI1L tested
- RoHS compliant
Zastosowania
Tłumaczenie AI
- Isolated DC-DC primary switch
- Synchronous rectifier
- Load switch
C462734 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Części alternatywne
| MPN | Producent | Typ alternatywny | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|---|
| HSBB6064 | HUASHUO | Podobne | PRPAK-8(3x3) | 2,630 | $ 0.2709 | ||
| MOT6194J | MOT | Podobne | PDFN-8L(3x3) | 31 | $ 0.6223 | ||
| TPM6038ND8 | TECH PUBLIC | Podobne | DFN-8(3x3) | 1,097 | $ 0.3306 | ||
| MDDG06R10Q | MDD(Microdiode Semiconductor) | Podobne | PDFN-8L(3x3) | 1,780 | $0.1337 $0.1378 | ||
| DOZ35N06 | DOINGTER | Podobne | DFN3x3-8 | 10,350 | $ 0.1273 |