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onsemi FXL4T245BQX

제조업체
제조사 품번
FXL4T245BQX
LCSC 번호
C457646
포장
DQFN-14(2.5x3)
고객 번호
주요 제원
Low Voltage Dual Supply 4-Bit Signal Translator with Configurable Voltage Supplies and Signal Levels and 3-STATE Outputs
데이터시트onsemi FXL4T245BQX
RoHS 준수4개 문서 이용 가능
모든 주문 보장
100% 정품 · 30일 반품 또는 교환
재고 있음: 100
100 재고 있음, 당일 발송
최소값: 1배수: 1판매 단위: Piece
BOM 목록에 추가
수량단가총액
1+$ 1.5722$ 1.57
10+$ 1.3135$ 13.14
30+$ 1.1702$ 35.11
100+$ 0.9668$ 96.68
500+$ 0.8952$ 447.60
1,000+$ 0.8643$ 864.30
표준 패키지3000/Full Reel
수량이 많을수록 더 좋은 가격?
$

제품 사양

전체
타입설명
카테고리Integrated Circuits (ICs)/Logic/Buffers, Drivers, Receivers, Transceivers
제조업체onsemi
포장DQFN-14(2.5x3)
Current - Output High(IOH)-
FunctionPower-off protection;Output enable high-impedance
Voltage - Supply1.1V~3.6V;1.1V~3.6V
Data Rate-
Output Signal-
Input Signal-
Current - Output Low(IOL)-
Output TypeTri-State
Interface-
Channel TypeBidirectional
Number of Elements2
Operating Temperature-40℃~+85℃
Number of Gates2
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개요

AI 번역

The FXL4T245 is a configurable dual-voltage-supply translator designed for bi-directional voltage translation of signals between two voltage levels. The device allows translation between voltages as high as 3.6V to as low as 1.1V. The A Port tracks the VCCA level, and the B Port tracks the VCCB level. Both ports are designed to accept supply voltage levels from 1.1V to 3.6V. This allows for bidirectional voltage translation over a variety of voltage levels: 1.2V, 1.5V, 1.8V, 2.5V, and 3.3V.

주요 특징

AI 번역
  • Bi-directional interface between any 2 levels from 1.1V to 3.6V
  • Fully configurable, inputs track VCC level
  • Non-preferential power-up sequencing; either VCC may be powered-up first
  • No power-up sequencing required
  • Outputs remain in 3-STATE until active VCC level is reached
  • Outputs switch to 3-STATE if either VCC is at GND
  • Power-off protection
  • Control inputs (T/R, OE) levels are referenced to VCCA voltage
  • Packaged in 14-terminal DQFN (2.5mm×3.0mm) package
  • ESD protection exceeds: • 4kV HBM ESD (per JESD22-A114 & Mil Std 883e 3015.7) • 8kV HBM I/O to GND ESD (per JESD22-A114 & Mil Std 883e 3015.7) • 1kV CDM ESD (per ESD STM 5.3) • 200V MM ESD (per JESD22-A115 & ESD STM5.2)