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Infineon IMDQ65R010M2HXUMA1
| Hersteller | |
| Herst.-Teilenr. | IMDQ65R010M2HXUMA1 |
| LCSC-Nr. | C43314477 |
| Verp. | PG-HDSOP-22 |
| Kundennummer | |
| Hauptmerkm. | 650V 154A 5.6V 651W 13.1mΩ 1 N-channel N-Channel PG-HDSOP-22 Single FETs, MOSFETs |
| Datenblatt | Infineon IMDQ65R010M2HXUMA1 |
| Alternativteile | 1 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | PG-HDSOP-22 | |
| Operating Temperature | -55℃~+175℃ | |
| Configuration | Half-Bridge | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 154A | |
| Output Capacitance(Coss) | 386pF | |
| Gate Threshold Voltage (Vgs(th)) | 5.6V | |
| Pd - Power Dissipation | 651W | |
| RDS(on) | 13.1mΩ | |
| Reverse Transfer Capacitance (Crss@Vds) | 22pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.002nF | |
| Gate Charge(Qg) | 113nC | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | PG-HDSOP-22 | |
| Operating Temperature | -55℃~+175℃ | |
| Configuration | Half-Bridge | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 154A | |
| Output Capacitance(Coss) | 386pF |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 5.6V | |
| Pd - Power Dissipation | 651W | |
| RDS(on) | 13.1mΩ | |
| Reverse Transfer Capacitance (Crss@Vds) | 22pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.002nF | |
| Gate Charge(Qg) | 113nC | |
| Type | N-Channel |
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Beschreibung
KI-Übersetzung
Based on Infineon's robust 2nd generation silicon carbide trench technology, the 650 V CoolSiC™ MOSFET delivers unmatched performance, superior reliability, and excellent ease of use. It enables cost-effective, high-efficiency, and simplified designs to meet the growing demands of systems and markets.
Merkmale
KI-Übersetzung
- Ultra-low switching losses
- Nominal gate threshold voltage, V_GS(th) = 4.5 V
- Robust immunity against parasitic turn-on even at 0 V turn-off gate voltage
- Flexible drive voltage, compatible with bipolar drive schemes
- Robust body diode operation under hard commutation events
- .XT interconnection technology for best-in-class thermal performance
Anwendungen
KI-Übersetzung
- Switching power supplies
- Solar PV inverters
- Energy storage and battery formation
- Uninterruptible power supplies
- EV charging infrastructure
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
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Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 25.4072 | $ 25.41 |
| 30+ | $ 24.2309 | $ 726.93 |
Standardgehäuse750/Full Reel | ||
Besserer Preis bei größerer Menge?
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Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | PG-HDSOP-22 | |
| Operating Temperature | -55℃~+175℃ | |
| Configuration | Half-Bridge | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 154A | |
| Output Capacitance(Coss) | 386pF | |
| Gate Threshold Voltage (Vgs(th)) | 5.6V | |
| Pd - Power Dissipation | 651W | |
| RDS(on) | 13.1mΩ | |
| Reverse Transfer Capacitance (Crss@Vds) | 22pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.002nF | |
| Gate Charge(Qg) | 113nC | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | PG-HDSOP-22 | |
| Operating Temperature | -55℃~+175℃ | |
| Configuration | Half-Bridge | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 154A | |
| Output Capacitance(Coss) | 386pF |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 5.6V | |
| Pd - Power Dissipation | 651W | |
| RDS(on) | 13.1mΩ | |
| Reverse Transfer Capacitance (Crss@Vds) | 22pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.002nF | |
| Gate Charge(Qg) | 113nC | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
Based on Infineon's robust 2nd generation silicon carbide trench technology, the 650 V CoolSiC™ MOSFET delivers unmatched performance, superior reliability, and excellent ease of use. It enables cost-effective, high-efficiency, and simplified designs to meet the growing demands of systems and markets.
Merkmale
KI-Übersetzung
- Ultra-low switching losses
- Nominal gate threshold voltage, V_GS(th) = 4.5 V
- Robust immunity against parasitic turn-on even at 0 V turn-off gate voltage
- Flexible drive voltage, compatible with bipolar drive schemes
- Robust body diode operation under hard commutation events
- .XT interconnection technology for best-in-class thermal performance
Anwendungen
KI-Übersetzung
- Switching power supplies
- Solar PV inverters
- Energy storage and battery formation
- Uninterruptible power supplies
- EV charging infrastructure
Compliance & Exportcodes
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|---|---|
| ECCN | - |
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| BRHTS | |
| INHTS | |
| MXHTS |
| Typ | Details |
|---|---|
| ECCN | - |
| CNHTS | |
| USHTS | |
| TARIC |
| Typ | Details |
|---|---|
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS |
Alternativteile
| MPN | Hersteller | Alternativtyp | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|---|
| IMDQ65R007M2HXUMA1 | Infineon | Ähnliche | SOP-22 | 0 | $ 28.2805 |
1 weitere Alternativteile.Alle Ersatzprodukte anzeigen