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EDA-ModelleEasyEDA
APEC AP9997GK
| Hersteller | APECAsian Brands |
| Herst.-Teilenr. | AP9997GK |
| LCSC-Nr. | C429868 |
| Verp. | SOT-223 |
| Kundennummer | |
| Hauptmerkm. | 2.8W 100V 3.2A 120mΩ@10V 1 N-channel N-Channel SOT-223 Single FETs, MOSFETs |
| Datenblatt | APEC AP9997GK |
| Alternativteile | 5 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | APEC | |
| Verp. | SOT-223 | |
| Output Capacitance(Coss) | 65pF | |
| Ciss-Input Capacitance | 720pF | |
| Pd - Power Dissipation | 2.8W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 3.2A | |
| Reverse Transfer Capacitance (Crss) | 50pF | |
| RDS(on) | 120mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 22nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | APEC | |
| Verp. | SOT-223 | |
| Output Capacitance(Coss) | 65pF | |
| Ciss-Input Capacitance | 720pF | |
| Pd - Power Dissipation | 2.8W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V |
| Typ | Beschreibung | |
|---|---|---|
| Current - Continuous Drain(Id) | 3.2A | |
| Reverse Transfer Capacitance (Crss) | 50pF | |
| RDS(on) | 120mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 22nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
The AP9997 series utilizes innovative design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides designers with a highly efficient device suitable for a wide range of power applications. The SOT-223 package is designed for SMT applications, featuring a larger heat sink tab than SO-8 and SOT packages.
Merkmale
KI-Übersetzung
- Simple drive requirements
- Lower gate charge
- Fast switching characteristics
- Halogen-free and RoHS compliant
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Nicht vorrätig
Benachrichtigen
Minimum: 5Vielfaches: 5Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 5+ | $ 0.2848 | $ 1.42 |
| 50+ | $ 0.227 | $ 11.35 |
| 150+ | $ 0.2022 | $ 30.33 |
| 500+ | $ 0.1713 | $ 85.65 |
| 3,000+ | $ 0.1575 | $ 472.50 |
| 6,000+ | $ 0.1492 | $ 895.20 |
Standardgehäuse3000/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | APEC | |
| Verp. | SOT-223 | |
| Output Capacitance(Coss) | 65pF | |
| Ciss-Input Capacitance | 720pF | |
| Pd - Power Dissipation | 2.8W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 3.2A | |
| Reverse Transfer Capacitance (Crss) | 50pF | |
| RDS(on) | 120mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 22nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | APEC | |
| Verp. | SOT-223 | |
| Output Capacitance(Coss) | 65pF | |
| Ciss-Input Capacitance | 720pF | |
| Pd - Power Dissipation | 2.8W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V |
| Typ | Beschreibung | |
|---|---|---|
| Current - Continuous Drain(Id) | 3.2A | |
| Reverse Transfer Capacitance (Crss) | 50pF | |
| RDS(on) | 120mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 22nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
The AP9997 series utilizes innovative design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides designers with a highly efficient device suitable for a wide range of power applications. The SOT-223 package is designed for SMT applications, featuring a larger heat sink tab than SO-8 and SOT packages.
Merkmale
KI-Übersetzung
- Simple drive requirements
- Lower gate charge
- Fast switching characteristics
- Halogen-free and RoHS compliant
C429868 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Alternativtyp | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|---|
| ME2614 | MATSUKI | Ähnliche | SOT-223-3 | 90 | $ 0.2629 | ||
| YJM04N10A | YANGJIE | Ähnliche | SOT-223 | 4,390 | $ 0.1755 | ||
| SL10N10A | Slkor | Ähnliche | SOT-223 | 4,080 | $0.2002 $0.2107 | ||
| BSP372N H6327-VB | VBsemi Elec | Ähnliche | SOT-223 | 7 | $0.4167 $0.4386 | ||
| NCE0106R | NCE | Ähnliche | SOT-223-3L | 4,765 | $ 0.3183 |