VBsemi Elec VBPB16I60
| Producent | VBsemi ElecAsian Brands |
| Nr części prod. | VBPB16I60 |
| Nr LCSC | C42412445 |
| Opak. | TO-3P |
| Numer Klienta | |
| Klucz. cechy | 96W 60A 600V TO-3P Single IGBTs |
| Karta Katalogowa | VBsemi Elec VBPB16I60 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Producent | VBsemi Elec | |
| Opak. | TO-3P | |
| Pd - Power Dissipation | 96W | |
| Td(off) | 163ns | |
| Td(on) | 18ns | |
| Current - Collector(Ic) | 60A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | 53pF | |
| IGBT Type | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - | |
| Operating Temperature | -55℃~+175℃ | |
| Vce Saturation(VCE(sat)) | - | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 88ns | |
| Switching Energy(Eoff) | - | |
| Turn-On Energy (Eon) | - | |
| Input Capacitance(Cies) | 6.5nF | |
| Output Capacitance(Coes) | 62pF | |
| Gate Charge(Qg) | 78nC@7V |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Producent | VBsemi Elec | |
| Opak. | TO-3P | |
| Pd - Power Dissipation | 96W | |
| Td(off) | 163ns | |
| Td(on) | 18ns | |
| Current - Collector(Ic) | 60A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | 53pF | |
| IGBT Type | - |
| Typ | Opis | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - | |
| Operating Temperature | -55℃~+175℃ | |
| Vce Saturation(VCE(sat)) | - | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 88ns | |
| Switching Energy(Eoff) | - | |
| Turn-On Energy (Eon) | - | |
| Input Capacitance(Cies) | 6.5nF | |
| Output Capacitance(Coes) | 62pF | |
| Gate Charge(Qg) | 78nC@7V |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- Ultra-low collector-emitter saturation voltage
- Low turn-off loss
- High-speed switching
- Maximum junction temperature 175℃
- Ultra-low gate charge
- Avalanche energy rated
Zastosowania
Tłumaczenie AI
- Telecom
- Lighting
- Consumer & Computing
- Industrial
- Renewable Energy
Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
Brak w magazynie
Powiadom mnie
Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
Dodaj do Listy BOM
| Szt. | Cena jedn.(Tylko do wglądu) | Suma całkowita |
|---|---|---|
| 1+ | $ 6.8022 | $ 6.80 |
| 210+ | $ 2.7148 | $ 570.11 |
| 510+ | $ 2.6237 | $ 1338.09 |
| 990+ | $ 2.579 | $ 2553.21 |
Standardowa Obudowa30/Full Tube | ||
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Producent | VBsemi Elec | |
| Opak. | TO-3P | |
| Pd - Power Dissipation | 96W | |
| Td(off) | 163ns | |
| Td(on) | 18ns | |
| Current - Collector(Ic) | 60A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | 53pF | |
| IGBT Type | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - | |
| Operating Temperature | -55℃~+175℃ | |
| Vce Saturation(VCE(sat)) | - | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 88ns | |
| Switching Energy(Eoff) | - | |
| Turn-On Energy (Eon) | - | |
| Input Capacitance(Cies) | 6.5nF | |
| Output Capacitance(Coes) | 62pF | |
| Gate Charge(Qg) | 78nC@7V |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Producent | VBsemi Elec | |
| Opak. | TO-3P | |
| Pd - Power Dissipation | 96W | |
| Td(off) | 163ns | |
| Td(on) | 18ns | |
| Current - Collector(Ic) | 60A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | 53pF | |
| IGBT Type | - |
| Typ | Opis | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - | |
| Operating Temperature | -55℃~+175℃ | |
| Vce Saturation(VCE(sat)) | - | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 88ns | |
| Switching Energy(Eoff) | - | |
| Turn-On Energy (Eon) | - | |
| Input Capacitance(Cies) | 6.5nF | |
| Output Capacitance(Coes) | 62pF | |
| Gate Charge(Qg) | 78nC@7V |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- Ultra-low collector-emitter saturation voltage
- Low turn-off loss
- High-speed switching
- Maximum junction temperature 175℃
- Ultra-low gate charge
- Avalanche energy rated
Zastosowania
Tłumaczenie AI
- Telecom
- Lighting
- Consumer & Computing
- Industrial
- Renewable Energy
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| ECCN | - |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Typ | Szczegóły |
|---|---|
| ECCN | - |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |

