10% OFF
- Diagrama de pines
- Footprint
Imágenes ilustrativas
Modelos EDAEasyEDA
Siliup SP20MF65TQ
| Fabricante | SiliupAsian Brands |
| N.º de pieza fab. | SP20MF65TQ |
| Nº LCSC | C42404753 |
| Emb. | TO-220-3L |
| Número de Cliente | |
| Atrib. clave | MOSFET 650V 20A TO-220-3L |
| Hoja de Datos | Siliup SP20MF65TQ |
| Piezas alternativas | 3 |
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Siliup | |
| Emb. | TO-220-3L | |
| Output Capacitance(Coss) | 65pF | |
| Ciss-Input Capacitance | 1.1nF | |
| Pd - Power Dissipation | 138W | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Configuration | - | |
| Current - Continuous Drain(Id) | 20A | |
| Reverse Transfer Capacitance (Crss) | 0.8pF | |
| RDS(on) | 165mΩ | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 36nC | |
| Vgs | ±30V | |
| Type | N-Channel | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Siliup | |
| Emb. | TO-220-3L | |
| Output Capacitance(Coss) | 65pF | |
| Ciss-Input Capacitance | 1.1nF | |
| Pd - Power Dissipation | 138W | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Configuration | - |
| Tipo | Descripción | |
|---|---|---|
| Current - Continuous Drain(Id) | 20A | |
| Reverse Transfer Capacitance (Crss) | 0.8pF | |
| RDS(on) | 165mΩ | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 36nC | |
| Vgs | ±30V | |
| Type | N-Channel | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
Ayuda y comentariosMostrar productos similares (0) >
Garantía en cada pedido
100% Auténtico · Devolución o Reemplazo en 30 Días
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Siliup | |
| Emb. | TO-220-3L | |
| Output Capacitance(Coss) | 65pF | |
| Ciss-Input Capacitance | 1.1nF | |
| Pd - Power Dissipation | 138W | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Configuration | - | |
| Current - Continuous Drain(Id) | 20A | |
| Reverse Transfer Capacitance (Crss) | 0.8pF | |
| RDS(on) | 165mΩ | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 36nC | |
| Vgs | ±30V | |
| Type | N-Channel | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Siliup | |
| Emb. | TO-220-3L | |
| Output Capacitance(Coss) | 65pF | |
| Ciss-Input Capacitance | 1.1nF | |
| Pd - Power Dissipation | 138W | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Configuration | - |
| Tipo | Descripción | |
|---|---|---|
| Current - Continuous Drain(Id) | 20A | |
| Reverse Transfer Capacitance (Crss) | 0.8pF | |
| RDS(on) | 165mΩ | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 36nC | |
| Vgs | ±30V | |
| Type | N-Channel | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
Ayuda y comentariosMostrar productos similares (0) >
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Detalles |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |