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onsemi NTHL065N65S3F
| 제조업체 | |
| 제조사 품번 | NTHL065N65S3F |
| LCSC 번호 | C398048 |
| 포장 | TO-247-3 |
| 고객 번호 | |
| 주요 제원 | 337W 650V 46A 5V 65mΩ@10V 1 N-channel N-Channel TO-247-3 Single FETs, MOSFETs RoHS |
| 데이터시트 | onsemi NTHL065N65S3F |
| RoHS 준수 | 4개 문서 이용 가능 |
| 대체 부품 | 5 |
제품 사양
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | onsemi | |
| 포장 | TO-247-3 | |
| Output Capacitance(Coss) | 95pF | |
| Pd - Power Dissipation | 337W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 46A | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 65mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.075nF | |
| Gate Charge(Qg) | 98nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | onsemi | |
| 포장 | TO-247-3 | |
| Output Capacitance(Coss) | 95pF | |
| Pd - Power Dissipation | 337W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 46A |
| 타입 | 설명 | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 65mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.075nF | |
| Gate Charge(Qg) | 98nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
개요
SUPERFET III MOSFETs are a new series of high-voltage super-junction (SJ) MOSFETs utilizing charge balance technology, featuring excellent low on-resistance and low gate charge performance. This advanced technology is designed to minimize conduction losses, deliver superior switching performance, and withstand extremely high dv/dt rates. As a result, SUPERFET III MOSFETs are ideal for a wide range of power supply systems where miniaturization and higher efficiency are required. The body diode of the SUPERFET III FRFET MOSFET is optimized for excellent reverse recovery performance, eliminating the need for additional components and improving system reliability.
주요 특징
- 700 V @ TJ = 150°C
- Typical RDS(on) = 54 mΩ
- Ultra-low gate charge (typical Qg = 98 nC)
- Low effective output capacitance (typical Coss(eff.) = 876 pF)
- 100% avalanche tested
- Lead-free and RoHS compliant
응용 분야
- Telecom/Server Power Supplies - Industrial Power Supplies - EV Chargers - UPS/Solar
| 수량 | 단가(참고용) | 총액 |
|---|---|---|
| 1+ | $ 8.4492 | $ 8.45 |
| 10+ | $ 8.3305 | $ 83.31 |
| 30+ | $ 8.2524 | $ 247.57 |
| 90+ | $ 8.1727 | $ 735.54 |
표준 패키지30/Full Tube | ||
제품 사양
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | onsemi | |
| 포장 | TO-247-3 | |
| Output Capacitance(Coss) | 95pF | |
| Pd - Power Dissipation | 337W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 46A | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 65mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.075nF | |
| Gate Charge(Qg) | 98nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | onsemi | |
| 포장 | TO-247-3 | |
| Output Capacitance(Coss) | 95pF | |
| Pd - Power Dissipation | 337W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 46A |
| 타입 | 설명 | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 65mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.075nF | |
| Gate Charge(Qg) | 98nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
개요
SUPERFET III MOSFETs are a new series of high-voltage super-junction (SJ) MOSFETs utilizing charge balance technology, featuring excellent low on-resistance and low gate charge performance. This advanced technology is designed to minimize conduction losses, deliver superior switching performance, and withstand extremely high dv/dt rates. As a result, SUPERFET III MOSFETs are ideal for a wide range of power supply systems where miniaturization and higher efficiency are required. The body diode of the SUPERFET III FRFET MOSFET is optimized for excellent reverse recovery performance, eliminating the need for additional components and improving system reliability.
주요 특징
- 700 V @ TJ = 150°C
- Typical RDS(on) = 54 mΩ
- Ultra-low gate charge (typical Qg = 98 nC)
- Low effective output capacitance (typical Coss(eff.) = 876 pF)
- 100% avalanche tested
- Lead-free and RoHS compliant
응용 분야
- Telecom/Server Power Supplies - Industrial Power Supplies - EV Chargers - UPS/Solar
C398048 EasyEDA 라이브러리
컴플라이언스 & 수출 코드
| 타입 | 세부사항 |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| 타입 | 세부사항 |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| 타입 | 세부사항 |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
대체 부품
| MPN | 제조사 | 대체 유형 | 포장 | 재고 현황 | 단가 | ||
|---|---|---|---|---|---|---|---|
| STW56N65DM2 | ST | 유사 제품 | TO-247-3 | 30 | $ 12.3436 | ||
| STW58N65DM2AG | ST | 유사 제품 | TO-247 | 1 | $ 15.2122 | ||
| BMW65N065UC1 | Bestirpower | 유사 제품 | TO247-3 | 172 | $ 2.2066 | ||
| WTM54N65FMP | WPMtek | 유사 제품 | TO-247 | 30 | $ 3.1627 | ||
| GBS65060TOB | GOSEMICON | 유사 제품 | TO-247 | 30 | $ 5.0836 |