TI IRFP251
| Produttore | |
| Cod. Prod. | IRFP251 |
| Cod. LCSC | C3290669 |
| Imballo | TO-247 |
| Numero Cliente | |
| Attr. chiave | N-Channel, Current:33A, Voltage:150V |
| Scheda Tecnica | TI IRFP251 |
| Parti alternative | 5 |
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | TI | |
| Imballo | TO-247 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 150V | |
| Current - Continuous Drain(Id) | 33A | |
| Ciss-Input Capacitance | 2nF | |
| Pd - Power Dissipation | 180W | |
| Reverse Transfer Capacitance (Crss) | 300pF | |
| RDS(on) | 85mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 120nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | TI | |
| Imballo | TO-247 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 150V | |
| Current - Continuous Drain(Id) | 33A | |
| Ciss-Input Capacitance | 2nF |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | 180W | |
| Reverse Transfer Capacitance (Crss) | 300pF | |
| RDS(on) | 85mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 120nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
Descrizione
These are N-channel enhancement-mode silicon-gate power MOSFETs. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All these power MOSFETs are suitable for applications such as switching regulators, switching converters, motor drivers, relay drivers, and high-power bipolar switching transistor drivers requiring high speed and low gate drive power. These types can be driven directly by ICs.
Caratteristiche
- 27A and 33A, 150V and 200V
- rDS(ON) = 0.085Ω and 0.120Ω
- Single-pulse avalanche energy rated
- SOA limited by power dissipation
- Nanosecond switching speed
- Linear transfer characteristics
- High input impedance
| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 1+ | $ 2.0645 | $ 2.06 |
| 200+ | $ 0.7993 | $ 159.86 |
| 500+ | $ 0.7715 | $ 385.75 |
| 1,000+ | $ 0.7576 | $ 757.60 |
Package Standard1/Full Bag | ||
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | TI | |
| Imballo | TO-247 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 150V | |
| Current - Continuous Drain(Id) | 33A | |
| Ciss-Input Capacitance | 2nF | |
| Pd - Power Dissipation | 180W | |
| Reverse Transfer Capacitance (Crss) | 300pF | |
| RDS(on) | 85mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 120nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | TI | |
| Imballo | TO-247 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 150V | |
| Current - Continuous Drain(Id) | 33A | |
| Ciss-Input Capacitance | 2nF |
| Tipo | Descrizione | |
|---|---|---|
| Pd - Power Dissipation | 180W | |
| Reverse Transfer Capacitance (Crss) | 300pF | |
| RDS(on) | 85mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 120nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
Descrizione
These are N-channel enhancement-mode silicon-gate power MOSFETs. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All these power MOSFETs are suitable for applications such as switching regulators, switching converters, motor drivers, relay drivers, and high-power bipolar switching transistor drivers requiring high speed and low gate drive power. These types can be driven directly by ICs.
Caratteristiche
- 27A and 33A, 150V and 200V
- rDS(ON) = 0.085Ω and 0.120Ω
- Single-pulse avalanche energy rated
- SOA limited by power dissipation
- Nanosecond switching speed
- Linear transfer characteristics
- High input impedance
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Parti alternative
| MPN | Produttore | Tipo alternativo | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|---|
| MS33N20HGC0 | MASPOWER | Simili | TO-247 | 67 | $ 1.3145 | ||
| IRFP3415PBF | Infineon | Simili | TO-247AC | 211 | $ 1.7722 | ||
| TSK50N30M | Truesemi | Simili | TO-247 | 79 | $ 2.8858 | ||
| SUG80050E-GE3 | VISHAY | Simili | TO-247AC | 35 | $ 6.1395 | ||
| SPW55N80C3 | Infineon | Simili | TO-247 | 292 | $ 6.8721 |