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AOS AON6260
| 제조업체 | |
| 제조사 품번 | AON6260 |
| LCSC 번호 | C3288308 |
| 포장 | DFN-8(5x6) |
| 고객 번호 | |
| 주요 제원 | 60V 2.5V 2.4mΩ@10V 1 N-channel N-Channel DFN-8(5x6) Single FETs, MOSFETs RoHS |
| 데이터시트 | AOS AON6260 |
| RoHS 준수 | 2개 문서 이용 가능 |
| 대체 부품 | 5 |
제품 사양
전체
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | AOS | |
| 포장 | DFN-8(5x6) | |
| Output Capacitance(Coss) | 1.39nF | |
| Pd - Power Dissipation | 7.3W;104W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 41A;85A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 75pF | |
| RDS(on) | 2.4mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.578nF | |
| Gate Charge(Qg) | 115nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | AOS | |
| 포장 | DFN-8(5x6) | |
| Output Capacitance(Coss) | 1.39nF | |
| Pd - Power Dissipation | 7.3W;104W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 41A;85A |
| 타입 | 설명 | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 75pF | |
| RDS(on) | 2.4mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.578nF | |
| Gate Charge(Qg) | 115nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
도움말 및 피드백유사 제품 보기 (0) >
개요
AI 번역
The AON6260 employs Trench MOSFET technology uniquely optimized to deliver the highest efficiency high-frequency switching performance. The combination of ultra-low RDS(ON), Ciss, and Coss minimizes both conduction and switching power losses. This device is ideally suited for boost converters and synchronous rectifiers in consumer, telecom, industrial power, and LED backlighting applications.
주요 특징
AI 번역
- Excellent digital pre-distortion capability
- High efficiency
- Designed for wideband operation
- Low output capacitance for enhanced Doherty application performance
- Internally matched for ease of use
응용 분야
AI 번역
- RF power amplifier for base station and multi-carrier applications in the 2300 MHz to 2690 MHz frequency range
모든 주문 보장
100% 정품 · 30일 반품 또는 교환
품절
재입고 알림
최소값: 1배수: 1판매 단위: Piece
BOM 목록에 추가
| 수량 | 단가(참고용) | 총액 |
|---|---|---|
| 1+ | $ 1.4319 | $ 1.43 |
| 200+ | $ 0.554 | $ 110.80 |
| 500+ | $ 0.5355 | $ 267.75 |
| 1,000+ | $ 0.5247 | $ 524.70 |
표준 패키지3000/Full Reel | ||
수량이 많을수록 더 좋은 가격?
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제품 사양
전체
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | AOS | |
| 포장 | DFN-8(5x6) | |
| Output Capacitance(Coss) | 1.39nF | |
| Pd - Power Dissipation | 7.3W;104W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 41A;85A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 75pF | |
| RDS(on) | 2.4mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.578nF | |
| Gate Charge(Qg) | 115nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | AOS | |
| 포장 | DFN-8(5x6) | |
| Output Capacitance(Coss) | 1.39nF | |
| Pd - Power Dissipation | 7.3W;104W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 41A;85A |
| 타입 | 설명 | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 75pF | |
| RDS(on) | 2.4mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.578nF | |
| Gate Charge(Qg) | 115nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
도움말 및 피드백유사 제품 보기 (0) >
개요
AI 번역
The AON6260 employs Trench MOSFET technology uniquely optimized to deliver the highest efficiency high-frequency switching performance. The combination of ultra-low RDS(ON), Ciss, and Coss minimizes both conduction and switching power losses. This device is ideally suited for boost converters and synchronous rectifiers in consumer, telecom, industrial power, and LED backlighting applications.
주요 특징
AI 번역
- Excellent digital pre-distortion capability
- High efficiency
- Designed for wideband operation
- Low output capacitance for enhanced Doherty application performance
- Internally matched for ease of use
응용 분야
AI 번역
- RF power amplifier for base station and multi-carrier applications in the 2300 MHz to 2690 MHz frequency range
C3288308 EasyEDA 라이브러리
컴플라이언스 & 수출 코드
| 타입 | 세부사항 |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| 타입 | 세부사항 |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| 타입 | 세부사항 |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
대체 부품
| MPN | 제조사 | 대체 유형 | 포장 | 재고 현황 | 단가 | ||
|---|---|---|---|---|---|---|---|
| E060N2P3HL1 | Existar | 유사 제품 | PDFN5x6-8 | 5,023 | $0.5044 $0.6305 | ||
| DMT6004LPS-13 | DIODES | 유사 제품 | PowerDI5060-8 | 1 | $ 2.0705 | ||
| FDMS86350ET80 | onsemi | 유사 제품 | Power-56-8 | 2 | $ 8.764 | ||
| SIDR626LEP-T1-RE3 | VISHAY | 유사 제품 | PowerPAK-SO-8DC | 4,188 | $ 2.4841 | ||
| SIDR626LDP-T1-RE3 | VISHAY | 유사 제품 | PowerPAK-SO-8DC | 2,842 | $ 1.719 |
5 개의 추가 대체 부품이 있습니다.모든 대체품 보기