onsemi MTSF3N02HDR2
| Fabricante | |
| N.º de pieza fab. | MTSF3N02HDR2 |
| Nº LCSC | C3276716 |
| Emb. | - |
| Número de Cliente | |
| Atrib. clave | N-Channel, Current:3A, Voltage:20V |
| Hoja de Datos | onsemi MTSF3N02HDR2 |
Especificaciones del Producto
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | onsemi | |
| Emb. | - | |
| Output Capacitance(Coss) | 255pF | |
| Ciss-Input Capacitance | 475pF | |
| Pd - Power Dissipation | 1.79W | |
| Configuration | - | |
| Drain to Source Voltage | 20V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 6.1A | |
| Reverse Transfer Capacitance (Crss) | 110pF | |
| RDS(on) | 50mΩ@2.7V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 17nC@4.5V | |
| Vgs | ±8V | |
| Gate Threshold Voltage (Vgs(th)) | 2.65V | |
| Type | N-Channel |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | onsemi | |
| Emb. | - | |
| Output Capacitance(Coss) | 255pF | |
| Ciss-Input Capacitance | 475pF | |
| Pd - Power Dissipation | 1.79W | |
| Configuration | - | |
| Drain to Source Voltage | 20V | |
| Operating Temperature | -55℃~+150℃ |
| Tipo | Descripción | |
|---|---|---|
| Current - Continuous Drain(Id) | 6.1A | |
| Reverse Transfer Capacitance (Crss) | 110pF | |
| RDS(on) | 50mΩ@2.7V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 17nC@4.5V | |
| Vgs | ±8V | |
| Gate Threshold Voltage (Vgs(th)) | 2.65V | |
| Type | N-Channel |
Descripción
These power MOSFET devices are capable of withstanding high energy in both avalanche and commutation modes, and the drain-source diode features an extremely short reverse recovery time. The Micro8 devices are designed for low-voltage, high-speed switching applications where power efficiency is critical. Avalanche energy is specified, eliminating uncertainty in designs switching inductive loads and providing additional safety margin against unexpected voltage transients.
Características
- Micro8 surface mount package – space-saving PCB footprint
- Ultra-low profile (<1.1mm) for thin applications such as PCMCIA cards
- Ultra-low RDS(on) for improved efficiency and extended battery life
- Logic-level gate drive – compatible with logic IC drive
- Diode characteristics suited for bridge circuits
- High-speed, soft-recovery diode characteristics
- IDSS specified at elevated temperature
- Avalanche energy specified
- Micro8 package mounting information provided
Aplicaciones
- DC-DC converters
- Power management for portable and battery-powered products such as computers, printers, mobile phones, and cordless phones
- Low-voltage motor control in mass storage products such as disk drives and tape drives
Especificaciones del Producto
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | onsemi | |
| Emb. | - | |
| Output Capacitance(Coss) | 255pF | |
| Ciss-Input Capacitance | 475pF | |
| Pd - Power Dissipation | 1.79W | |
| Configuration | - | |
| Drain to Source Voltage | 20V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 6.1A | |
| Reverse Transfer Capacitance (Crss) | 110pF | |
| RDS(on) | 50mΩ@2.7V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 17nC@4.5V | |
| Vgs | ±8V | |
| Gate Threshold Voltage (Vgs(th)) | 2.65V | |
| Type | N-Channel |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | onsemi | |
| Emb. | - | |
| Output Capacitance(Coss) | 255pF | |
| Ciss-Input Capacitance | 475pF | |
| Pd - Power Dissipation | 1.79W | |
| Configuration | - | |
| Drain to Source Voltage | 20V | |
| Operating Temperature | -55℃~+150℃ |
| Tipo | Descripción | |
|---|---|---|
| Current - Continuous Drain(Id) | 6.1A | |
| Reverse Transfer Capacitance (Crss) | 110pF | |
| RDS(on) | 50mΩ@2.7V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 17nC@4.5V | |
| Vgs | ±8V | |
| Gate Threshold Voltage (Vgs(th)) | 2.65V | |
| Type | N-Channel |
Descripción
These power MOSFET devices are capable of withstanding high energy in both avalanche and commutation modes, and the drain-source diode features an extremely short reverse recovery time. The Micro8 devices are designed for low-voltage, high-speed switching applications where power efficiency is critical. Avalanche energy is specified, eliminating uncertainty in designs switching inductive loads and providing additional safety margin against unexpected voltage transients.
Características
- Micro8 surface mount package – space-saving PCB footprint
- Ultra-low profile (<1.1mm) for thin applications such as PCMCIA cards
- Ultra-low RDS(on) for improved efficiency and extended battery life
- Logic-level gate drive – compatible with logic IC drive
- Diode characteristics suited for bridge circuits
- High-speed, soft-recovery diode characteristics
- IDSS specified at elevated temperature
- Avalanche energy specified
- Micro8 package mounting information provided
Aplicaciones
- DC-DC converters
- Power management for portable and battery-powered products such as computers, printers, mobile phones, and cordless phones
- Low-voltage motor control in mass storage products such as disk drives and tape drives
C3276716 Biblioteca EasyEDA
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Detalles |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

