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Modelos EDAEasyEDA
ST STP270N8F7
| Fabricante | |
| N.º de pieza fab. | STP270N8F7 |
| Nº LCSC | C2970830 |
| Emb. | TO-220 |
| Número de Cliente | |
| Atrib. clave | MOSFET N-CH 80V 180A TO-220 |
| Hoja de Datos | ST STP270N8F7 |
| Cumplimiento RoHS | 1 documentos disponibles |
| Piezas alternativas | 5 |
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | ST | |
| Emb. | TO-220 | |
| Output Capacitance(Coss) | 2.05nF | |
| Ciss-Input Capacitance | 13.6nF | |
| Pd - Power Dissipation | 315W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 80V | |
| Current - Continuous Drain(Id) | 180A | |
| Reverse Transfer Capacitance (Crss) | 236pF | |
| RDS(on) | 2.5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 193nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Type | N-Channel |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | ST | |
| Emb. | TO-220 | |
| Output Capacitance(Coss) | 2.05nF | |
| Ciss-Input Capacitance | 13.6nF | |
| Pd - Power Dissipation | 315W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 80V |
| Tipo | Descripción | |
|---|---|---|
| Current - Continuous Drain(Id) | 180A | |
| Reverse Transfer Capacitance (Crss) | 236pF | |
| RDS(on) | 2.5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 193nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Type | N-Channel |
Ayuda y comentariosMostrar productos similares (0) >
Descripción
Traducción por IA
These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Características
Traducción por IA
- Among the lowest RDS(on) on the market
- Excellent FoM (figure of merit)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness
Aplicaciones
Traducción por IA
- Switching applications
Garantía en cada pedido
100% Auténtico · Devolución o Reemplazo en 30 Días
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | ST | |
| Emb. | TO-220 | |
| Output Capacitance(Coss) | 2.05nF | |
| Ciss-Input Capacitance | 13.6nF | |
| Pd - Power Dissipation | 315W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 80V | |
| Current - Continuous Drain(Id) | 180A | |
| Reverse Transfer Capacitance (Crss) | 236pF | |
| RDS(on) | 2.5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 193nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Type | N-Channel |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | ST | |
| Emb. | TO-220 | |
| Output Capacitance(Coss) | 2.05nF | |
| Ciss-Input Capacitance | 13.6nF | |
| Pd - Power Dissipation | 315W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 80V |
| Tipo | Descripción | |
|---|---|---|
| Current - Continuous Drain(Id) | 180A | |
| Reverse Transfer Capacitance (Crss) | 236pF | |
| RDS(on) | 2.5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 193nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Type | N-Channel |
Ayuda y comentariosMostrar productos similares (0) >
Descripción
Traducción por IA
These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Características
Traducción por IA
- Among the lowest RDS(on) on the market
- Excellent FoM (figure of merit)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness
Aplicaciones
Traducción por IA
- Switching applications
C2970830 Biblioteca EasyEDA
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Detalles |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |