Immagini a scopo illustrativo
Modelli EDAEasyEDA
Infineon/CYPRESS S25FL512SAGMFVR10
| Produttore | |
| Cod. Prod. | S25FL512SAGMFVR10 |
| Cod. LCSC | C2944634 |
| Imballo | SOIC-16-300mil |
| Numero Cliente | |
| Attr. chiave | 512Mbit 2.7V~3.6V 133MHz SPI SOIC-16-300mil Memory RoHS |
| Scheda Tecnica | Infineon/CYPRESS S25FL512SAGMFVR10 |
| Conformità RoHS | 1 documenti disponibili |
| Parti alternative | 5 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Integrated Circuits (ICs)/Memory/Memory | |
| Produttore | Infineon/CYPRESS | |
| Imballo | SOIC-16-300mil | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Write enable latch;Power-on reset;Hardware write protection;Software write protection;Absolute write protection | |
| Memory Size | 512Mbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 100,000 cycles | |
| Clock Frequency | 133MHz | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | 340us | |
| Standby Supply Current | 70uA | |
| Interface | SPI |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Integrated Circuits (ICs)/Memory/Memory | |
| Produttore | Infineon/CYPRESS | |
| Imballo | SOIC-16-300mil | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Write enable latch;Power-on reset;Hardware write protection;Software write protection;Absolute write protection | |
| Memory Size | 512Mbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 100,000 cycles |
| Tipo | Descrizione | |
|---|---|---|
| Clock Frequency | 133MHz | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | 340us | |
| Standby Supply Current | 70uA | |
| Interface | SPI |
Aiuto & FeedbackMostra prodotti simili (0) >
Caratteristiche
Traduzione AI
- Density – 512 Mbits (64 Mbytes)
- Serial Peripheral Interface (SPI) – SPI Clock polarity and phase modes 0 and 3 – Double Data Rate (DDR) option – Extended Addressing: 32-bit address – Serial Command set and footprint compatible with S25FL-A, S25FL-K, and S25FL-P SPI families – Multi I/O Command set and footprint compatible with S25FL-P SPI family
- READ Commands – Normal, Fast, Dual, Quad, Fast DDR, Dual DDR, Quad DDR – AutoBoot - power up or reset and execute a Normal or Quad read command automatically at a preselected address – Common Flash Interface (CFI) data for configuration information.
- Programming (1.5 Mbytes/s) – 512-byte Page Programming buffer – Quad-Input Page Programming (QPP) for slow clock systems
- Erase (0.5 to 0.65 Mbytes/s) – Uniform 256-kbyte sectors
- Cycling Endurance – 100,000 Program-Erase Cycles on any sector typical
- Data Retention – 20 Year Data Retention typical
- Security features – One Time Program (OTP) array of 1024 bytes – Block Protection: – Status Register bits to control protection against program or erase of a contiguous range of sectors. – Hardware and software control options – Advanced Sector Protection (ASP) – Individual sector protection controlled by boot code or password Spansion MirrorBit Technology with Eclipse Architecture
- Core Supply Voltage: 2.7V to 3.6V
- I/O Supply Voltage: 1.65V to 3.6V – SO16
Garanzia su ogni ordine
100% Autentico · Reso o Sostituzione entro 30 Giorni
Esaurito
Avvisami
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 1+ | $ 0.7006 | $ 0.70 |
| 200+ | $ 0.2716 | $ 54.32 |
| 500+ | $ 0.2624 | $ 131.20 |
| 1,000+ | $ 0.2577 | $ 257.70 |
Package Standard2400/Full Tray | ||
Prezzo migliore per quantità maggiore?
$
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Integrated Circuits (ICs)/Memory/Memory | |
| Produttore | Infineon/CYPRESS | |
| Imballo | SOIC-16-300mil | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Write enable latch;Power-on reset;Hardware write protection;Software write protection;Absolute write protection | |
| Memory Size | 512Mbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 100,000 cycles | |
| Clock Frequency | 133MHz | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | 340us | |
| Standby Supply Current | 70uA | |
| Interface | SPI |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Integrated Circuits (ICs)/Memory/Memory | |
| Produttore | Infineon/CYPRESS | |
| Imballo | SOIC-16-300mil | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Write enable latch;Power-on reset;Hardware write protection;Software write protection;Absolute write protection | |
| Memory Size | 512Mbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 100,000 cycles |
| Tipo | Descrizione | |
|---|---|---|
| Clock Frequency | 133MHz | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | 340us | |
| Standby Supply Current | 70uA | |
| Interface | SPI |
Aiuto & FeedbackMostra prodotti simili (0) >
Caratteristiche
Traduzione AI
- Density – 512 Mbits (64 Mbytes)
- Serial Peripheral Interface (SPI) – SPI Clock polarity and phase modes 0 and 3 – Double Data Rate (DDR) option – Extended Addressing: 32-bit address – Serial Command set and footprint compatible with S25FL-A, S25FL-K, and S25FL-P SPI families – Multi I/O Command set and footprint compatible with S25FL-P SPI family
- READ Commands – Normal, Fast, Dual, Quad, Fast DDR, Dual DDR, Quad DDR – AutoBoot - power up or reset and execute a Normal or Quad read command automatically at a preselected address – Common Flash Interface (CFI) data for configuration information.
- Programming (1.5 Mbytes/s) – 512-byte Page Programming buffer – Quad-Input Page Programming (QPP) for slow clock systems
- Erase (0.5 to 0.65 Mbytes/s) – Uniform 256-kbyte sectors
- Cycling Endurance – 100,000 Program-Erase Cycles on any sector typical
- Data Retention – 20 Year Data Retention typical
- Security features – One Time Program (OTP) array of 1024 bytes – Block Protection: – Status Register bits to control protection against program or erase of a contiguous range of sectors. – Hardware and software control options – Advanced Sector Protection (ASP) – Individual sector protection controlled by boot code or password Spansion MirrorBit Technology with Eclipse Architecture
- Core Supply Voltage: 2.7V to 3.6V
- I/O Supply Voltage: 1.65V to 3.6V – SO16
C2944634 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | 3A991B1A |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | 3A991B1A |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
Parti alternative
| MPN | Produttore | Tipo alternativo | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|---|
| S25FL512SAGMFV010 | Infineon/CYPRESS | Simili | SOIC-16-300mil | 10 | $ 13.3361 | ||
| S25FL512SAGMFI011 | Infineon/CYPRESS | Simili | SOIC-16-300mil | 4 | $ 6.5012 | ||
| S25FL512SAGMFI010 | Infineon/CYPRESS | Simili | SOIC-16-300mil | 3 | $ 7.3124 | ||
| S25FL512SAGMFIR13 | Infineon/CYPRESS | Simili | SOIC-16-300mil | 5 | $ 18.8103 | ||
| IS25LP512MG-RMLE-TR | ISSI | Simili | SOIC-16-300mil | 7 | $ 12.8301 |
5 altri componenti alternativi.Visualizza tutti i sostituti