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EDA-ModelleEasyEDA
ST STGF14NC60KD
| Hersteller | |
| Herst.-Teilenr. | STGF14NC60KD |
| LCSC-Nr. | C283290 |
| Verp. | TO-220F-3 |
| Kundennummer | |
| Hauptmerkm. | 28W 11A 600V TO-220F-3 Single IGBTs RoHS |
| Datenblatt | ST STGF14NC60KD |
| RoHS-Konformität | 3 Dokumente verfügbar |
| Alternativteile | 10 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Hersteller | ST | |
| Verp. | TO-220F-3 | |
| Td(off) | 116ns;196ns | |
| Pd - Power Dissipation | 28W | |
| Td(on) | 22.5ns;22ns | |
| Current - Collector(Ic) | 11A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | 15.5pF | |
| IGBT Type | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - | |
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 2.1V;1.8V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 37ns | |
| Switching Energy(Eoff) | 155uJ | |
| Turn-On Energy (Eon) | 82uJ;131uJ | |
| Input Capacitance(Cies) | 760pF | |
| Output Capacitance(Coes) | 86pF | |
| Gate Charge(Qg) | 34.4nC@15V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Hersteller | ST | |
| Verp. | TO-220F-3 | |
| Td(off) | 116ns;196ns | |
| Pd - Power Dissipation | 28W | |
| Td(on) | 22.5ns;22ns | |
| Current - Collector(Ic) | 11A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | 15.5pF | |
| IGBT Type | - |
| Typ | Beschreibung | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - | |
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 2.1V;1.8V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 37ns | |
| Switching Energy(Eoff) | 155uJ | |
| Turn-On Energy (Eon) | 82uJ;131uJ | |
| Input Capacitance(Cies) | 760pF | |
| Output Capacitance(Coes) | 86pF | |
| Gate Charge(Qg) | 34.4nC@15V |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
These devices are very fast IGBTs developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior.
Merkmale
KI-Übersetzung
- Low on voltage drop (VCE(sat))
- Low Cres / Cies ratio (no cross-conduction susceptibility)
- Very soft ultrafast recovery antiparallel diode
- Short-circuit withstand time 10 μs
Anwendungen
KI-Übersetzung
- High frequency inverters
- SMPS and PFC in both hard switch and resonant topologies
- Motor drives
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Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 1.6036 | $ 1.60 |
| 10+ | $ 1.5824 | $ 15.82 |
| 30+ | $ 1.5694 | $ 47.08 |
| 100+ | $ 1.5564 | $ 155.64 |
Standardgehäuse50/Full Tube | ||
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Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Hersteller | ST | |
| Verp. | TO-220F-3 | |
| Td(off) | 116ns;196ns | |
| Pd - Power Dissipation | 28W | |
| Td(on) | 22.5ns;22ns | |
| Current - Collector(Ic) | 11A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | 15.5pF | |
| IGBT Type | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - | |
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 2.1V;1.8V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 37ns | |
| Switching Energy(Eoff) | 155uJ | |
| Turn-On Energy (Eon) | 82uJ;131uJ | |
| Input Capacitance(Cies) | 760pF | |
| Output Capacitance(Coes) | 86pF | |
| Gate Charge(Qg) | 34.4nC@15V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Hersteller | ST | |
| Verp. | TO-220F-3 | |
| Td(off) | 116ns;196ns | |
| Pd - Power Dissipation | 28W | |
| Td(on) | 22.5ns;22ns | |
| Current - Collector(Ic) | 11A | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Reverse Transfer Capacitance (Cres) | 15.5pF | |
| IGBT Type | - |
| Typ | Beschreibung | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - | |
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 2.1V;1.8V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 37ns | |
| Switching Energy(Eoff) | 155uJ | |
| Turn-On Energy (Eon) | 82uJ;131uJ | |
| Input Capacitance(Cies) | 760pF | |
| Output Capacitance(Coes) | 86pF | |
| Gate Charge(Qg) | 34.4nC@15V |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
These devices are very fast IGBTs developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior.
Merkmale
KI-Übersetzung
- Low on voltage drop (VCE(sat))
- Low Cres / Cies ratio (no cross-conduction susceptibility)
- Very soft ultrafast recovery antiparallel diode
- Short-circuit withstand time 10 μs
Anwendungen
KI-Übersetzung
- High frequency inverters
- SMPS and PFC in both hard switch and resonant topologies
- Motor drives
C283290 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Typ | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
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| IKA15N60T-JSM | JSMSEMI | TO-220F | 48 | $ 0.6277 | ||
| JNG15T65FS1 | JIAENSEMI | TO-220F | 21 | $ 0.7084 | ||
| CMF20B65D | Cmos | TO-220F | 175 | $0.7645 $0.8047 | ||
| SPF15N65T1T2TL-JSM | JSMSEMI | TO-220F | 0 | $0.9220 $0.9705 | ||
| STGF19NC60HD | ST | TO-220FP | 0 | $ 3.2418 | ||
| JNG25T65FS1 | JIAENSEMI | TO-220F | 0 | $ 1.1129 | ||
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