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EDA-ModelleEasyEDA
VISHAY SIHFIB9N60A-E3
| Hersteller | |
| Herst.-Teilenr. | SIHFIB9N60A-E3 |
| LCSC-Nr. | C2661 |
| Verp. | TO-220F-3 |
| Kundennummer | |
| Hauptmerkm. | N-Channel MOSFET, Current:9.2A, Voltage:600V |
| Datenblatt | VISHAY SIHFIB9N60A-E3 |
| Alternativteile | 5 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VISHAY | |
| Verp. | TO-220F-3 | |
| Output Capacitance(Coss) | 180pF | |
| Ciss-Input Capacitance | 1.4nF | |
| Pd - Power Dissipation | 60W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 9.2A | |
| Reverse Transfer Capacitance (Crss) | 7.1pF | |
| RDS(on) | 750mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 49nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VISHAY | |
| Verp. | TO-220F-3 | |
| Output Capacitance(Coss) | 180pF | |
| Ciss-Input Capacitance | 1.4nF | |
| Pd - Power Dissipation | 60W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V |
| Typ | Beschreibung | |
|---|---|---|
| Current - Continuous Drain(Id) | 9.2A | |
| Reverse Transfer Capacitance (Crss) | 7.1pF | |
| RDS(on) | 750mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 49nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Low gate charge Qg, simple drive requirements
- Improved gate, avalanche, and dynamic dV/dt robustness
- Fully characterized capacitance, avalanche voltage, and current
- Lead-free (Pb-free)
Anwendungen
KI-Übersetzung
- Switch Mode Power Supply (SMPS)
- Uninterruptible Power Supply
- High-speed power switching
- High-voltage isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz)
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Nicht vorrätig
Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 1.2136 | $ 1.21 |
| 10+ | $ 1.0203 | $ 10.20 |
| 25+ | $ 0.8806 | $ 22.02 |
| 100+ | $ 0.7847 | $ 78.47 |
| 500+ | $ 0.7279 | $ 363.95 |
| 1,000+ | $ 0.697 | $ 697.00 |
Standardgehäuse25/Full Tube | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VISHAY | |
| Verp. | TO-220F-3 | |
| Output Capacitance(Coss) | 180pF | |
| Ciss-Input Capacitance | 1.4nF | |
| Pd - Power Dissipation | 60W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 9.2A | |
| Reverse Transfer Capacitance (Crss) | 7.1pF | |
| RDS(on) | 750mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 49nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VISHAY | |
| Verp. | TO-220F-3 | |
| Output Capacitance(Coss) | 180pF | |
| Ciss-Input Capacitance | 1.4nF | |
| Pd - Power Dissipation | 60W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V |
| Typ | Beschreibung | |
|---|---|---|
| Current - Continuous Drain(Id) | 9.2A | |
| Reverse Transfer Capacitance (Crss) | 7.1pF | |
| RDS(on) | 750mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 49nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Low gate charge Qg, simple drive requirements
- Improved gate, avalanche, and dynamic dV/dt robustness
- Fully characterized capacitance, avalanche voltage, and current
- Lead-free (Pb-free)
Anwendungen
KI-Übersetzung
- Switch Mode Power Supply (SMPS)
- Uninterruptible Power Supply
- High-speed power switching
- High-voltage isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz)
C2661 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Alternativtyp | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|---|
| CMF15N65A | Cmos | Ähnliche | TO-220F | 200 | $0.6275 $0.6605 | ||
| SMF12N65 | HUAKE | Ähnliche | TO-220F | 360 | $ 0.524 | ||
| 12N65KL-TF1-T | UTC | Ähnliche | TO-220F1 | 80 | $ 0.5536 | ||
| F12N60L | Jingdao Microelectronics | Ähnliche | TO-220F-3L | 35 | $ 0.5144 | ||
| 10N60L-TF1-T | UTC | Ähnliche | TO-220F1 | 32 | $ 0.8359 |