RENESAS AT25DF041B-MAHN-T

A serial interface Flash memory device designed for use in a wide variety of high-volume consumer based applications in which program code is shadowed from Flash memory into embedded or external RAM for execution. The flexible erase architecture, with its page erase granularity it is ideal for data storage as well, eliminating the need for additional data storage devices.

The erase block sizes have been optimized to meet the needs of today's code and data storage applications. By optimizing the size of the erase blocks, the memory space can be used much more efficiently. The wasted and unused memory space that occurs with large sectored and large block erase Flash memory devices can be greatly reduced. This increased memory space efficiency allows additional code routines and data storage segments to be added while still maintaining the same overall device density.

The device also contains a specialized OTP (One-Time Programmable) Security Register that can be used for purposes such as unique device serialization, system-level Electronic Serial Number (ESN) storage, locked key storage, etc.

Specifically designed for use in many different systems, it supports read, program, and erase operations with a wide supply voltage range of 1.65V to 3.6V. No separate voltage is required for programming and erasing.

• Single 1.65V - 3.6V Supply
• Serial Peripheral Interface (SPI) Compatible
• Supports SPI Modes 0 and 3
• Supports Dual-I/O Operation 104MHz Maximum Operating Frequency
• Clock-to-Output (tV) of 6 ns
• Flexible, Optimized Erase Architecture for Code + Data Storage Applications
• Small (256-Byte) Page Erase
• Uniform 4-Kbyte Block Erase
• Uniform 32-Kbyte Block Erase
• Uniform 64-Kbyte Block Erase
• Full Chip Erase
• Hardware Controlled Locking of Protected Sectors via WP Pin
• 128-byte, One-Time Programmable (OTP) Security Register
• 64 bytes factory programmed with a unique identifier
• 64 bytes user programmable
• Flexible Programming
• Byte/Page Program (1 to 256 Bytes)
• Dual-Input Byte/Page Program (1 to 256 Bytes)
• Sequential Program Mode Capability
• Fast Program and Erase Times
• 1.25ms Typical Page Program (256 Bytes) Time
• 35ms Typical 4-Kbyte Block Erase Time
• 250ms Typical 32-Kbyte Block Erase Time
• 450ms Typical 64-Kbyte Block Erase Time
• Automatic Checking and Reporting of Erase/Program Failures
• Software Controlled Reset
• JEDEC Standard Manufacturer and Device ID Read Methodology
• Low Power Dissipation
• 200nA Ultra Deep Power Down current (Typical)
• 5μA Deep Power-Down Current (Typical)
• 25uA Standby current (Typical)
• 4.5mA Active Read Current (Typical)
• Endurance: 100,000 Program/Erase Cycles
• Data Retention: 20 Years
• Complies with Full Industrial Temperature Range
• Industry Standard Green (Pb/Halide-free/RoHS Compliant) Package Options
• 8-lead SOIC (150-mil)
• 8-pad Ultra Thin DFN (2x3x0.6 mm)
• 8-pad Ultra Thin DFN (5x6x0.6 mm)
• 8-lead TSSOP Package
• 8-ball WLCSP (3x2x3 ball matrix)