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MICROCHIP SST25VF010A-33-4C-SAE-T

Produttore
Cod. Prod.
SST25VF010A-33-4C-SAE-T
Cod. LCSC
C178277
Imballo
SOIC-8
Numero Cliente
Attr. chiave
2.7V~3.6V 33MHz SPI SOIC-8 Memory RoHS
Scheda TecnicaMICROCHIP SST25VF010A-33-4C-SAE-T
Conformità RoHS1 documenti disponibili
Parti alternative1
Garanzia su ogni ordine
100% Autentico · Reso o Sostituzione entro 30 Giorni
Esaurito
Avvisami
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
QtàPr. unit.(Solo per riferimento)Importo totale
1+$ 1.3262$ 1.33
10+$ 1.1284$ 11.28
30+$ 1.0202$ 30.61
100+$ 0.8965$ 89.65
500+$ 0.8424$ 421.20
1,000+$ 0.8177$ 817.70
Package Standard3300/Full Reel
Prezzo migliore per quantità maggiore?
$

Specifiche del Prodotto

Tutto
TipoDescrizione
CategoriaIntegrated Circuits (ICs)/Memory/Memory
ProduttoreMICROCHIP
ImballoSOIC-8
Operating Temperature0℃~+70℃
FeaturesWrite enable latch;Software write protection
Memory Size-
Voltage - Supply2.7V~3.6V
Program / Erase Cycles100,000 cycles
Clock Frequency33MHz
Data Retention - TDR (Year)100 Years
Block Erase Time(tBE)18ms@(32KB)
Write Cycle Time(tWC)-
Page Programming Time (Tpp)-
Standby Supply Current8uA
InterfaceSPI

Descrizione

Traduzione AI

SST’s serial flash family features a four-wire, SPI-compatible interface that allows for a low pincount package occupying less board space and ultimately lowering total system costs. SST25VF010A SPI serial flash memory is manufactured with SST’s proprietary, high performance CMOS SuperFlash Technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST25VF010A device significantly improves performance, while lowering power consumption. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash memory technologies. The SST25VF010A device operates with a single 2.7-3.6V power supply.

Caratteristiche

Traduzione AI
  • Single 2.7-3.6V Read and Write Operations
  • Serial Interface Architecture – SPI Compatible: Mode 0 and Mode 3
  • 33 MHz Max Clock Frequency
  • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention
  • Low Power Consumption:
    • Active Read Current: 7 mA (typical)
    • Standby Current: 8 μA (typical)
  • Flexible Erase Capability
    • Uniform 4 KByte sectors
    • Uniform 32 KByte overlay blocks
  • Fast Erase and Byte-Program:
    • Chip-Erase Time: 70 ms (typical)
    • Sector- or Block-Erase Time: 18 ms (typical)
    • Byte-Program Time: 14 µs (typical)
  • Auto Address Increment (AAI) Programming – Decrease total chip programming time over Byte-Program operations
  • End-of-Write Detection – Software Status
  • Hold Pin (HOLD#) – Suspends a serial sequence to the memory without deselecting the device
  • Write Protection (WP#) – Enables/Disables the Lock-Down function of the status register
  • Software Write Protection – Write protection through Block-Protection bits in status register
  • Temperature Range
    • Commercial: 0℃ to +70℃
    • Industrial: -40℃ to +85℃
    • Extended: -20℃ to +85℃
  • Packages Available
    • 8-lead SOIC 150 mil body width
    • 8-contact WSON (5mm x 6mm)
  • All non-Pb (lead-free) devices are RoHS compliant

Parti alternative

MPNProduttoreTipo alternativoImballaggioDisponibilitàPrezzo unitario
SST25VF010A-33-4C-SAEMICROCHIPConf. Alt.SOIC-893$ 1.3242
1 altri componenti alternativi.Visualizza tutti i sostituti