MICROCHIP SST25VF010A-33-4C-SAE-T
| Produttore | |
| Cod. Prod. | SST25VF010A-33-4C-SAE-T |
| Cod. LCSC | C178277 |
| Imballo | SOIC-8 |
| Numero Cliente | |
| Attr. chiave | 2.7V~3.6V 33MHz SPI SOIC-8 Memory RoHS |
| Scheda Tecnica | MICROCHIP SST25VF010A-33-4C-SAE-T |
| Conformità RoHS | 1 documenti disponibili |
| Parti alternative | 1 |
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Integrated Circuits (ICs)/Memory/Memory | |
| Produttore | MICROCHIP | |
| Imballo | SOIC-8 | |
| Operating Temperature | 0℃~+70℃ | |
| Features | Write enable latch;Software write protection | |
| Memory Size | - | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 100,000 cycles | |
| Clock Frequency | 33MHz | |
| Data Retention - TDR (Year) | 100 Years | |
| Block Erase Time(tBE) | 18ms@(32KB) | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | - | |
| Standby Supply Current | 8uA | |
| Interface | SPI |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Integrated Circuits (ICs)/Memory/Memory | |
| Produttore | MICROCHIP | |
| Imballo | SOIC-8 | |
| Operating Temperature | 0℃~+70℃ | |
| Features | Write enable latch;Software write protection | |
| Memory Size | - | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 100,000 cycles |
| Tipo | Descrizione | |
|---|---|---|
| Clock Frequency | 33MHz | |
| Data Retention - TDR (Year) | 100 Years | |
| Block Erase Time(tBE) | 18ms@(32KB) | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | - | |
| Standby Supply Current | 8uA | |
| Interface | SPI |
Descrizione
SST’s serial flash family features a four-wire, SPI-compatible interface that allows for a low pincount package occupying less board space and ultimately lowering total system costs. SST25VF010A SPI serial flash memory is manufactured with SST’s proprietary, high performance CMOS SuperFlash Technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST25VF010A device significantly improves performance, while lowering power consumption. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash memory technologies. The SST25VF010A device operates with a single 2.7-3.6V power supply.
Caratteristiche
- Single 2.7-3.6V Read and Write Operations
- Serial Interface Architecture – SPI Compatible: Mode 0 and Mode 3
- 33 MHz Max Clock Frequency
- Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention
- Low Power Consumption:
- Active Read Current: 7 mA (typical)
- Standby Current: 8 μA (typical)
- Flexible Erase Capability
- Uniform 4 KByte sectors
- Uniform 32 KByte overlay blocks
- Fast Erase and Byte-Program:
- Chip-Erase Time: 70 ms (typical)
- Sector- or Block-Erase Time: 18 ms (typical)
- Byte-Program Time: 14 µs (typical)
- Auto Address Increment (AAI) Programming – Decrease total chip programming time over Byte-Program operations
- End-of-Write Detection – Software Status
- Hold Pin (HOLD#) – Suspends a serial sequence to the memory without deselecting the device
- Write Protection (WP#) – Enables/Disables the Lock-Down function of the status register
- Software Write Protection – Write protection through Block-Protection bits in status register
- Temperature Range
- Commercial: 0℃ to +70℃
- Industrial: -40℃ to +85℃
- Extended: -20℃ to +85℃
- Packages Available
- 8-lead SOIC 150 mil body width
- 8-contact WSON (5mm x 6mm)
- All non-Pb (lead-free) devices are RoHS compliant
| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 1+ | $ 1.3262 | $ 1.33 |
| 10+ | $ 1.1284 | $ 11.28 |
| 30+ | $ 1.0202 | $ 30.61 |
| 100+ | $ 0.8965 | $ 89.65 |
| 500+ | $ 0.8424 | $ 421.20 |
| 1,000+ | $ 0.8177 | $ 817.70 |
Package Standard3300/Full Reel | ||
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Integrated Circuits (ICs)/Memory/Memory | |
| Produttore | MICROCHIP | |
| Imballo | SOIC-8 | |
| Operating Temperature | 0℃~+70℃ | |
| Features | Write enable latch;Software write protection | |
| Memory Size | - | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 100,000 cycles | |
| Clock Frequency | 33MHz | |
| Data Retention - TDR (Year) | 100 Years | |
| Block Erase Time(tBE) | 18ms@(32KB) | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | - | |
| Standby Supply Current | 8uA | |
| Interface | SPI |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Integrated Circuits (ICs)/Memory/Memory | |
| Produttore | MICROCHIP | |
| Imballo | SOIC-8 | |
| Operating Temperature | 0℃~+70℃ | |
| Features | Write enable latch;Software write protection | |
| Memory Size | - | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 100,000 cycles |
| Tipo | Descrizione | |
|---|---|---|
| Clock Frequency | 33MHz | |
| Data Retention - TDR (Year) | 100 Years | |
| Block Erase Time(tBE) | 18ms@(32KB) | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | - | |
| Standby Supply Current | 8uA | |
| Interface | SPI |
Descrizione
SST’s serial flash family features a four-wire, SPI-compatible interface that allows for a low pincount package occupying less board space and ultimately lowering total system costs. SST25VF010A SPI serial flash memory is manufactured with SST’s proprietary, high performance CMOS SuperFlash Technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST25VF010A device significantly improves performance, while lowering power consumption. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash memory technologies. The SST25VF010A device operates with a single 2.7-3.6V power supply.
Caratteristiche
- Single 2.7-3.6V Read and Write Operations
- Serial Interface Architecture – SPI Compatible: Mode 0 and Mode 3
- 33 MHz Max Clock Frequency
- Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention
- Low Power Consumption:
- Active Read Current: 7 mA (typical)
- Standby Current: 8 μA (typical)
- Flexible Erase Capability
- Uniform 4 KByte sectors
- Uniform 32 KByte overlay blocks
- Fast Erase and Byte-Program:
- Chip-Erase Time: 70 ms (typical)
- Sector- or Block-Erase Time: 18 ms (typical)
- Byte-Program Time: 14 µs (typical)
- Auto Address Increment (AAI) Programming – Decrease total chip programming time over Byte-Program operations
- End-of-Write Detection – Software Status
- Hold Pin (HOLD#) – Suspends a serial sequence to the memory without deselecting the device
- Write Protection (WP#) – Enables/Disables the Lock-Down function of the status register
- Software Write Protection – Write protection through Block-Protection bits in status register
- Temperature Range
- Commercial: 0℃ to +70℃
- Industrial: -40℃ to +85℃
- Extended: -20℃ to +85℃
- Packages Available
- 8-lead SOIC 150 mil body width
- 8-contact WSON (5mm x 6mm)
- All non-Pb (lead-free) devices are RoHS compliant
C178277 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
Parti alternative
| MPN | Produttore | Tipo alternativo | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|---|
| SST25VF010A-33-4C-SAE | MICROCHIP | Conf. Alt. | SOIC-8 | 93 | $ 1.3242 |



