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Modelli EDAEasyEDA
Infineon SPA17N80C3
| Produttore | |
| Cod. Prod. | SPA17N80C3 |
| Cod. LCSC | C167103 |
| Imballo | TO-220F-3 |
| Numero Cliente | |
| Attr. chiave | 42W 800V 17A 3.9V 290mΩ@10V 1 N-channel N-Channel TO-220F-3 Single FETs, MOSFETs RoHS |
| Scheda Tecnica | Infineon SPA17N80C3 |
| Conformità RoHS | 1 documenti disponibili |
| Parti alternative | 5 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Infineon | |
| Imballo | TO-220F-3 | |
| Output Capacitance(Coss) | 1.25nF | |
| Pd - Power Dissipation | 42W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 800V | |
| Current - Continuous Drain(Id) | 17A | |
| Gate Threshold Voltage (Vgs(th)) | 3.9V | |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF | |
| RDS(on) | 290mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.32nF | |
| Gate Charge(Qg) | 177nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Infineon | |
| Imballo | TO-220F-3 | |
| Output Capacitance(Coss) | 1.25nF | |
| Pd - Power Dissipation | 42W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 800V | |
| Current - Continuous Drain(Id) | 17A |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3.9V | |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF | |
| RDS(on) | 290mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.32nF | |
| Gate Charge(Qg) | 177nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
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Caratteristiche
Traduzione AI
- Revolutionary new high-voltage technology
- Best-in-class RDS(on) in TO-220 package worldwide
- Ultra-low gate charge
- Avalanche-rated (repetitive)
- Extremely high dv/dt rating
- Ultra-low effective capacitance
- Improved transconductance
- PG-TO-220-3-31: Fully isolated package (2500 VAC; 1 min)
- Lead-free lead plating; RoHS compliant
- JEDEC qualified for target applications
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Esaurito
Avvisami
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 1+ | $ 8.0241 | $ 8.02 |
| 10+ | $ 7.2865 | $ 72.87 |
| 50+ | $ 6.8478 | $ 342.39 |
| 100+ | $ 6.4043 | $ 640.43 |
| 500+ | $ 6.1996 | $ 3099.80 |
| 1,000+ | $ 6.107 | $ 6107.00 |
Package Standard50/Full Tube | ||
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Infineon | |
| Imballo | TO-220F-3 | |
| Output Capacitance(Coss) | 1.25nF | |
| Pd - Power Dissipation | 42W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 800V | |
| Current - Continuous Drain(Id) | 17A | |
| Gate Threshold Voltage (Vgs(th)) | 3.9V | |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF | |
| RDS(on) | 290mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.32nF | |
| Gate Charge(Qg) | 177nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Infineon | |
| Imballo | TO-220F-3 | |
| Output Capacitance(Coss) | 1.25nF | |
| Pd - Power Dissipation | 42W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 800V | |
| Current - Continuous Drain(Id) | 17A |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3.9V | |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF | |
| RDS(on) | 290mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.32nF | |
| Gate Charge(Qg) | 177nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Caratteristiche
Traduzione AI
- Revolutionary new high-voltage technology
- Best-in-class RDS(on) in TO-220 package worldwide
- Ultra-low gate charge
- Avalanche-rated (repetitive)
- Extremely high dv/dt rating
- Ultra-low effective capacitance
- Improved transconductance
- PG-TO-220-3-31: Fully isolated package (2500 VAC; 1 min)
- Lead-free lead plating; RoHS compliant
- JEDEC qualified for target applications
C167103 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Parti alternative
| MPN | Produttore | Tipo alternativo | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|---|
| RSE80R250F | REASUNOS | Simili | TO-220F | 173 | $1.3216 $1.3911 | ||
| CMF85R290R | Cmos | Simili | TO-220F | 3 | $2.0988 $2.2092 | ||
| FCPF290N80 | onsemi | Simili | TO-220F | 1 | $ 4.2663 | ||
| STF21N90K5-VB | VBsemi Elec | Simili | TO-220F | 5 | $4.2255 $4.9711 | ||
| MS25N100HCT1 | MASPOWER | Simili | TO-220F | 40 | $ 3.7467 |
5 altri componenti alternativi.Visualizza tutti i sostituti