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NCE NCEP02T10
| Produttore | NCEAsian Brands |
| Cod. Prod. | NCEP02T10 |
| Cod. LCSC | C918236 |
| Imballo | TO-220-3L |
| Numero Cliente | |
| Attr. chiave | MOSFET N-CH 200V 100A TO-220-3L |
| Scheda Tecnica | NCE NCEP02T10 |
| Parti alternative | 1 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | NCE | |
| Imballo | TO-220-3L | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 200V | |
| Output Capacitance(Coss) | 425pF | |
| Current - Continuous Drain(Id) | 100A | |
| Ciss-Input Capacitance | 6nF | |
| Pd - Power Dissipation | 300W | |
| Reverse Transfer Capacitance (Crss) | 16pF | |
| RDS(on) | 11mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 87nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | NCE | |
| Imballo | TO-220-3L | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 200V | |
| Output Capacitance(Coss) | 425pF | |
| Current - Continuous Drain(Id) | 100A |
| Tipo | Descrizione | |
|---|---|---|
| Ciss-Input Capacitance | 6nF | |
| Pd - Power Dissipation | 300W | |
| Reverse Transfer Capacitance (Crss) | 16pF | |
| RDS(on) | 11mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 87nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Type | N-Channel |
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Descrizione
Traduzione AI
NCEP02T10 employs Super-Trench technology, uniquely optimized to deliver the highest efficiency high-frequency switching performance. The combination of ultra-low RDS(ON) and QG minimizes both conduction and switching power losses. This device is ideal for high-frequency switching and synchronous rectification.
Caratteristiche
Traduzione AI
- VDS = 200V, ID = 100A
- RDS(ON) < 12 mΩ @ VGS = 10V
- Excellent gate charge × RDS(ON) figure of merit
- Ultra-low on-resistance RDS(ON)
- Operating temperature up to 175°C
- Lead-free pin plating
- 100% UIS tested
Applicazioni
Traduzione AI
-DC/DC Converters - Ideal for high-frequency switching and synchronous rectification
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Disponibile: 132
132 Pronta consegna
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit. | Importo totale |
|---|---|---|
| 1+ | $ 2.8756 | $ 2.88 |
| 10+ | $ 2.3964 | $ 23.96 |
| 50+ | $ 2.0974 | $ 104.87 |
| 100+ | $ 1.7904 | $ 179.04 |
| 500+ | $ 1.6507 | $ 825.35 |
| 1,000+ | $ 1.5906 | $ 1590.60 |
Package Standard50/Full Tube | ||
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | NCE | |
| Imballo | TO-220-3L | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 200V | |
| Output Capacitance(Coss) | 425pF | |
| Current - Continuous Drain(Id) | 100A | |
| Ciss-Input Capacitance | 6nF | |
| Pd - Power Dissipation | 300W | |
| Reverse Transfer Capacitance (Crss) | 16pF | |
| RDS(on) | 11mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 87nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | NCE | |
| Imballo | TO-220-3L | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 200V | |
| Output Capacitance(Coss) | 425pF | |
| Current - Continuous Drain(Id) | 100A |
| Tipo | Descrizione | |
|---|---|---|
| Ciss-Input Capacitance | 6nF | |
| Pd - Power Dissipation | 300W | |
| Reverse Transfer Capacitance (Crss) | 16pF | |
| RDS(on) | 11mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 87nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Type | N-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
NCEP02T10 employs Super-Trench technology, uniquely optimized to deliver the highest efficiency high-frequency switching performance. The combination of ultra-low RDS(ON) and QG minimizes both conduction and switching power losses. This device is ideal for high-frequency switching and synchronous rectification.
Caratteristiche
Traduzione AI
- VDS = 200V, ID = 100A
- RDS(ON) < 12 mΩ @ VGS = 10V
- Excellent gate charge × RDS(ON) figure of merit
- Ultra-low on-resistance RDS(ON)
- Operating temperature up to 175°C
- Lead-free pin plating
- 100% UIS tested
Applicazioni
Traduzione AI
-DC/DC Converters - Ideal for high-frequency switching and synchronous rectification
C918236 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Parti alternative
| MPN | Produttore | Tipo alternativo | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|---|
| NCEP2390 | NCE | Simili | TO-220-3L | 0 | $ 2.0833 |