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EDA-ModelleEasyEDA
onsemi FDD86540
| Hersteller | |
| Herst.-Teilenr. | FDD86540 |
| LCSC-Nr. | C903594 |
| Verp. | TO-252 |
| Kundennummer | |
| Hauptmerkm. | 127W 60V 136A 4.1mΩ 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS |
| Datenblatt | onsemi FDD86540 |
| RoHS-Konformität | 4 Dokumente verfügbar |
| Alternativteile | 5 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | TO-252 | |
| Output Capacitance(Coss) | 1.409nF | |
| Ciss-Input Capacitance | 6.34nF | |
| Pd - Power Dissipation | 127W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 136A | |
| Reverse Transfer Capacitance (Crss) | 90pF | |
| RDS(on) | 4.1mΩ | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 90nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3.1V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | TO-252 | |
| Output Capacitance(Coss) | 1.409nF | |
| Ciss-Input Capacitance | 6.34nF | |
| Pd - Power Dissipation | 127W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V |
| Typ | Beschreibung | |
|---|---|---|
| Current - Continuous Drain(Id) | 136A | |
| Reverse Transfer Capacitance (Crss) | 90pF | |
| RDS(on) | 4.1mΩ | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 90nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3.1V | |
| Type | N-Channel |
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Beschreibung
KI-Übersetzung
This N-channel MOSFET is designed to improve overall efficiency and minimize switching node ringing in DC/DC converters using synchronous or conventional switching PWM controllers. It is optimized for low gate charge, low rDS(on), fast switching speed, and body diode reverse recovery performance.
Merkmale
KI-Übersetzung
- Maximum rDS(on) = 4.1 mΩ at VGS = 10 V, ID = 21.5 A
- Maximum rDS(on) = 5 mΩ at VGS = 8 V, ID = 19.5 A
- 100% UII tested
- RoHS compliant
Anwendungen
KI-Übersetzung
- Primary switch in isolated DC-DC converters
- Synchronous rectifier
- Load switch
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Nicht vorrätig
Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 1.0364 | $ 1.04 |
| 10+ | $ 0.836 | $ 8.36 |
| 30+ | $ 0.7358 | $ 22.07 |
| 100+ | $ 0.6356 | $ 63.56 |
| 500+ | $ 0.5765 | $ 288.25 |
| 1,000+ | $ 0.5453 | $ 545.30 |
Standardgehäuse2500/Full Reel | ||
Besserer Preis bei größerer Menge?
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Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | TO-252 | |
| Output Capacitance(Coss) | 1.409nF | |
| Ciss-Input Capacitance | 6.34nF | |
| Pd - Power Dissipation | 127W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 136A | |
| Reverse Transfer Capacitance (Crss) | 90pF | |
| RDS(on) | 4.1mΩ | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 90nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3.1V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | TO-252 | |
| Output Capacitance(Coss) | 1.409nF | |
| Ciss-Input Capacitance | 6.34nF | |
| Pd - Power Dissipation | 127W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V |
| Typ | Beschreibung | |
|---|---|---|
| Current - Continuous Drain(Id) | 136A | |
| Reverse Transfer Capacitance (Crss) | 90pF | |
| RDS(on) | 4.1mΩ | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 90nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3.1V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
This N-channel MOSFET is designed to improve overall efficiency and minimize switching node ringing in DC/DC converters using synchronous or conventional switching PWM controllers. It is optimized for low gate charge, low rDS(on), fast switching speed, and body diode reverse recovery performance.
Merkmale
KI-Übersetzung
- Maximum rDS(on) = 4.1 mΩ at VGS = 10 V, ID = 21.5 A
- Maximum rDS(on) = 5 mΩ at VGS = 8 V, ID = 19.5 A
- 100% UII tested
- RoHS compliant
Anwendungen
KI-Übersetzung
- Primary switch in isolated DC-DC converters
- Synchronous rectifier
- Load switch
C903594 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Alternativtyp | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|---|
| IPD053N06N | Infineon | Direkt | TO-252-3 | 316 | $ 0.923 | ||
| TPM6080NHK3 | TECH PUBLIC | Ähnliche | TO-252 | 403 | $0.5821 $0.6127 | ||
| HYG025N06LS1D | HUAYI | Ähnliche | TO-252-2L | 5,734 | $ 0.7293 | ||
| SP60N02GTH | Siliup | Ähnliche | TO-252 | 4,332 | $ 0.5554 | ||
| DE2R5TG-B | DOINGTER | Ähnliche | TO-252 | 964 | $ 0.5327 |