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Modelli EDAEasyEDA
onsemi FGH40T65UPD
| Produttore | |
| Cod. Prod. | FGH40T65UPD |
| Cod. LCSC | C898186 |
| Imballo | TO-247-3 |
| Numero Cliente | |
| Attr. chiave | 268W 40A 650V FS (Field Stop) TO-247-3 Single IGBTs RoHS |
| Scheda Tecnica | onsemi FGH40T65UPD |
| Conformità RoHS | 3 documenti disponibili |
| Parti alternative | 10 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Produttore | onsemi | |
| Imballo | TO-247-3 | |
| Td(off) | 144ns | |
| Pd - Power Dissipation | 268W | |
| Td(on) | 20ns | |
| Current - Collector(Ic) | 40A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Transfer Capacitance (Cres) | 48pF | |
| IGBT Type | FS (Field Stop) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - | |
| Operating Temperature | -55℃~+175℃ | |
| Vce Saturation(VCE(sat)) | - | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 33ns | |
| Switching Energy(Eoff) | 580uJ | |
| Turn-On Energy (Eon) | 1.59mJ | |
| Input Capacitance(Cies) | 2.73nF | |
| Output Capacitance(Coes) | 82pF | |
| Gate Charge(Qg) | 177nC@15V |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Produttore | onsemi | |
| Imballo | TO-247-3 | |
| Td(off) | 144ns | |
| Pd - Power Dissipation | 268W | |
| Td(on) | 20ns | |
| Current - Collector(Ic) | 40A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Transfer Capacitance (Cres) | 48pF | |
| IGBT Type | FS (Field Stop) |
| Tipo | Descrizione | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - | |
| Operating Temperature | -55℃~+175℃ | |
| Vce Saturation(VCE(sat)) | - | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 33ns | |
| Switching Energy(Eoff) | 580uJ | |
| Turn-On Energy (Eon) | 1.59mJ | |
| Input Capacitance(Cies) | 2.73nF | |
| Output Capacitance(Coes) | 82pF | |
| Gate Charge(Qg) | 177nC@15V |
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Descrizione
Traduzione AI
Utilizing field-stop trench IGBT technology, this series of field-stop trench IGBTs delivers optimized performance for solar inverters, uninterruptible power supplies, welding machines, and digital power generators — applications where low conduction and switching losses are critical.
Caratteristiche
Traduzione AI
- Maximum junction temperature: 175°C
- Positive temperature coefficient for easy parallel operation
- High current capability
- Low saturation voltage: typical 1.65V @ collector current 40A
- 100% tested
- High input impedance
- Tight parameter distribution
- RoHS compliant
- Short-circuit robustness greater than 5μs @ 25°C
Applicazioni
Traduzione AI
- Solar inverters
- Uninterruptible power supplies
- Electric welding machines
- Digital power generators
- Telecom and energy storage systems
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Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 1+ | $ 6.052 | $ 6.05 |
| 200+ | $ 2.343 | $ 468.60 |
| 450+ | $ 2.2597 | $ 1016.87 |
| 900+ | $ 2.2196 | $ 1997.64 |
Package Standard450/Full Tube | ||
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Produttore | onsemi | |
| Imballo | TO-247-3 | |
| Td(off) | 144ns | |
| Pd - Power Dissipation | 268W | |
| Td(on) | 20ns | |
| Current - Collector(Ic) | 40A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Transfer Capacitance (Cres) | 48pF | |
| IGBT Type | FS (Field Stop) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - | |
| Operating Temperature | -55℃~+175℃ | |
| Vce Saturation(VCE(sat)) | - | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 33ns | |
| Switching Energy(Eoff) | 580uJ | |
| Turn-On Energy (Eon) | 1.59mJ | |
| Input Capacitance(Cies) | 2.73nF | |
| Output Capacitance(Coes) | 82pF | |
| Gate Charge(Qg) | 177nC@15V |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Produttore | onsemi | |
| Imballo | TO-247-3 | |
| Td(off) | 144ns | |
| Pd - Power Dissipation | 268W | |
| Td(on) | 20ns | |
| Current - Collector(Ic) | 40A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Transfer Capacitance (Cres) | 48pF | |
| IGBT Type | FS (Field Stop) |
| Tipo | Descrizione | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - | |
| Operating Temperature | -55℃~+175℃ | |
| Vce Saturation(VCE(sat)) | - | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 33ns | |
| Switching Energy(Eoff) | 580uJ | |
| Turn-On Energy (Eon) | 1.59mJ | |
| Input Capacitance(Cies) | 2.73nF | |
| Output Capacitance(Coes) | 82pF | |
| Gate Charge(Qg) | 177nC@15V |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
Utilizing field-stop trench IGBT technology, this series of field-stop trench IGBTs delivers optimized performance for solar inverters, uninterruptible power supplies, welding machines, and digital power generators — applications where low conduction and switching losses are critical.
Caratteristiche
Traduzione AI
- Maximum junction temperature: 175°C
- Positive temperature coefficient for easy parallel operation
- High current capability
- Low saturation voltage: typical 1.65V @ collector current 40A
- 100% tested
- High input impedance
- Tight parameter distribution
- RoHS compliant
- Short-circuit robustness greater than 5μs @ 25°C
Applicazioni
Traduzione AI
- Solar inverters
- Uninterruptible power supplies
- Electric welding machines
- Digital power generators
- Telecom and energy storage systems
C898186 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Parti alternative
| MPN | Produttore | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| GWA40MS120DF4AG | ST | TO-247 | 15 | $ 7.7336 | ||
| NCE25TD120BT | NCE | TO-247 | 441 | $ 2.4334 | ||
| FGH40T65SHD-F155 | onsemi | TO-247-G03 | 680 | $ 1.6798 | ||
| IKW50N65SS5XKSA1 | Infineon | TO-247-3 | 3 | $ 11.035 | ||
| FGHL50T65MQD | onsemi | TO-247-3L | 3 | $ 4.7846 | ||
| AFGHL50T65SQD | onsemi | TO-247-3L | 35 | $3.1174 $5.9949 | ||
| AFGHL40T65SPD | onsemi | TO-247-3L | 0 | $ 8.4383 | ||
| FGH40T65SPD-F085 | onsemi | TO-247-3 | 0 | $ 2.1239 | ||
| FGH40T65SPD-F155 | onsemi | TO-247-3 | 0 | $ 3.0802 | ||
| FGH60T65SHD-F155 | onsemi | TO-247-3 | 0 | $ 7.1565 |