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EDA-ModelleEasyEDA
onsemi SMUN2211T1G
| Hersteller | |
| Herst.-Teilenr. | SMUN2211T1G |
| LCSC-Nr. | C894379 |
| Verp. | SC-59 |
| Kundennummer | |
| Hauptmerkm. | 50V 35 100mA 230mW NPN 1 NPN (Pre-Biased) SC-59 Single, Pre-Biased Bipolar Transistors RoHS |
| Datenblatt | onsemi SMUN2211T1G |
| RoHS-Konformität | 4 Dokumente verfügbar |
| Alternativteile | 10 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Hersteller | onsemi | |
| Verp. | SC-59 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | 10V | |
| DC Current Gain | 35 | |
| Vce Saturation(VCE(sat)) | 250mV@10mA,0.3mA | |
| Current - Collector(Ic) | 100mA | |
| Output Voltage(VO(on)) | 200mV | |
| Input Resistor | 13kΩ | |
| Resistor Ratio | 1.2 | |
| Pd - Power Dissipation | 230mW | |
| Input Voltage (VI(on)@Ic,Vce) | 2.5V@10mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 800mV@100uA,5V | |
| Operating temperature | -55℃~+150℃ | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Hersteller | onsemi | |
| Verp. | SC-59 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | 10V | |
| DC Current Gain | 35 | |
| Vce Saturation(VCE(sat)) | 250mV@10mA,0.3mA | |
| Current - Collector(Ic) | 100mA |
| Typ | Beschreibung | |
|---|---|---|
| Output Voltage(VO(on)) | 200mV | |
| Input Resistor | 13kΩ | |
| Resistor Ratio | 1.2 | |
| Pd - Power Dissipation | 230mW | |
| Input Voltage (VI(on)@Ic,Vce) | 2.5V@10mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 800mV@100uA,5V | |
| Operating temperature | -55℃~+150℃ | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
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Beschreibung
KI-Übersetzung
This series of digital transistors is designed to replace discrete devices and their external resistor bias networks. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. Using BRTs reduces system cost and board space.
Merkmale
KI-Übersetzung
- Simplified circuit design
- Reduced board space
- Reduced component count
- S and NSV prefixes for automotive and other applications requiring unique site of origin and controlled change requirements; AEC-Q101 qualified with PPAP capability
- These devices are Pb-free, halogen-free/BFR-free, and RoHS compliant
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Nicht vorrätig
Benachrichtigen
Minimum: 10Vielfaches: 10Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 10+ | $ 0.027 | $ 0.27 |
| 100+ | $ 0.0264 | $ 2.64 |
| 300+ | $ 0.0261 | $ 7.83 |
| 1,000+ | $ 0.0257 | $ 25.70 |
Standardgehäuse3000/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Hersteller | onsemi | |
| Verp. | SC-59 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | 10V | |
| DC Current Gain | 35 | |
| Vce Saturation(VCE(sat)) | 250mV@10mA,0.3mA | |
| Current - Collector(Ic) | 100mA | |
| Output Voltage(VO(on)) | 200mV | |
| Input Resistor | 13kΩ | |
| Resistor Ratio | 1.2 | |
| Pd - Power Dissipation | 230mW | |
| Input Voltage (VI(on)@Ic,Vce) | 2.5V@10mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 800mV@100uA,5V | |
| Operating temperature | -55℃~+150℃ | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Hersteller | onsemi | |
| Verp. | SC-59 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | 10V | |
| DC Current Gain | 35 | |
| Vce Saturation(VCE(sat)) | 250mV@10mA,0.3mA | |
| Current - Collector(Ic) | 100mA |
| Typ | Beschreibung | |
|---|---|---|
| Output Voltage(VO(on)) | 200mV | |
| Input Resistor | 13kΩ | |
| Resistor Ratio | 1.2 | |
| Pd - Power Dissipation | 230mW | |
| Input Voltage (VI(on)@Ic,Vce) | 2.5V@10mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 800mV@100uA,5V | |
| Operating temperature | -55℃~+150℃ | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
This series of digital transistors is designed to replace discrete devices and their external resistor bias networks. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. Using BRTs reduces system cost and board space.
Merkmale
KI-Übersetzung
- Simplified circuit design
- Reduced board space
- Reduced component count
- S and NSV prefixes for automotive and other applications requiring unique site of origin and controlled change requirements; AEC-Q101 qualified with PPAP capability
- These devices are Pb-free, halogen-free/BFR-free, and RoHS compliant
C894379 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Typ | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Alternativteile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| MUN2211T1G | onsemi | SC-59 | 7,300 | $ 0.0441 | ||
| MMUN2211LT1G | onsemi | SOT-23 | 70,020 | $ 0.0333 | ||
| S-LMUN2211LT1G | LRC | SOT-23 | 10,660 | $ 0.0301 | ||
| MUN2232T1G | onsemi | SC-59 | 125 | $ 0.0839 | ||
| SMUN2232T1G | onsemi | SC-59 | 2,890 | $ 0.0931 | ||
| PDTC124ET,215 | Nexperia | TO-236AB | 6,230 | $ 0.0385 | ||
| SMUN2211T3G | onsemi | SC-59 | 0 | $ 0.0325 | ||
| PDTC114ET,235 | Nexperia | SOT-23 | 0 | $ 0.025 | ||
| MMUN2217LT1G | onsemi | SOT-23 | 0 | $ 0.0184 | ||
| NSVMMUN2217LT1G | onsemi | SOT-23-3 | 0 | $ 0.0796 |