MICROCHIP 2N5010U4
| Produttore | |
| Cod. Prod. | 2N5010U4 |
| Cod. LCSC | C6803409 |
| Imballo | SMD-3P |
| Numero Cliente | |
| Attr. chiave | 500V 30 200mA 1 NPN NPN SMD-3P Single Bipolar Transistors |
| Scheda Tecnica | MICROCHIP 2N5010U4 |
| Parti alternative | 1 |
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Produttore | MICROCHIP | |
| Imballo | SMD-3P | |
| Current - Collector Cutoff | 10nA | |
| Operating Temperature | -65℃~+200℃ | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 500V | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 30 | |
| Current - Collector(Ic) | 200mA | |
| Pd - Power Dissipation | 1W | |
| Configuration | Standalone | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 1.4V |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Produttore | MICROCHIP | |
| Imballo | SMD-3P | |
| Current - Collector Cutoff | 10nA | |
| Operating Temperature | -65℃~+200℃ | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 500V | |
| Emitter-Base Voltage VEBO | 5V |
| Tipo | Descrizione | |
|---|---|---|
| DC Current Gain | 30 | |
| Current - Collector(Ic) | 200mA | |
| Pd - Power Dissipation | 1W | |
| Configuration | Standalone | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 1.4V |
Descrizione
This specification covers the performance requirements for NPN silicon transistors. Four levels of product assurance are provided for each package device type, as specified in MIL-PRF-19500. Device packages are (TO-5 and TO-39) (in accordance with Figure 1) and (U4) (in accordance with Figure 2). Unless otherwise specified, ambient temperature T<sub>A</sub> = +25°C. Maximum ratings, key electrical characteristics, lead identification numbers, and applicable documents are also described.
| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 1+ | $ 245.9728 | $ 245.97 |
| 200+ | $ 98.1458 | $ 19629.16 |
| 500+ | $ 94.8662 | $ 47433.10 |
| 1,000+ | $ 93.2446 | $ 93244.60 |
Package Standard100/Full Bag | ||
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Produttore | MICROCHIP | |
| Imballo | SMD-3P | |
| Current - Collector Cutoff | 10nA | |
| Operating Temperature | -65℃~+200℃ | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 500V | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 30 | |
| Current - Collector(Ic) | 200mA | |
| Pd - Power Dissipation | 1W | |
| Configuration | Standalone | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 1.4V |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Produttore | MICROCHIP | |
| Imballo | SMD-3P | |
| Current - Collector Cutoff | 10nA | |
| Operating Temperature | -65℃~+200℃ | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 500V | |
| Emitter-Base Voltage VEBO | 5V |
| Tipo | Descrizione | |
|---|---|---|
| DC Current Gain | 30 | |
| Current - Collector(Ic) | 200mA | |
| Pd - Power Dissipation | 1W | |
| Configuration | Standalone | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 1.4V |
Descrizione
This specification covers the performance requirements for NPN silicon transistors. Four levels of product assurance are provided for each package device type, as specified in MIL-PRF-19500. Device packages are (TO-5 and TO-39) (in accordance with Figure 1) and (U4) (in accordance with Figure 2). Unless otherwise specified, ambient temperature T<sub>A</sub> = +25°C. Maximum ratings, key electrical characteristics, lead identification numbers, and applicable documents are also described.
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Tipo | Dettagli |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
Parti alternative
| MPN | Produttore | Tipo alternativo | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|---|
| 2N5011U4 | MICROCHIP | Simili | SMD-3P | 0 | $ 215.1966 |